 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| GaAs MMIC CGY 50 ________________________________________________________________________________________________________ Datasheet * Single-stage monolithic microwave IC ( MMICamplifier ) * Cascadable 50 gain block * Application range: 100 MHz to 3 GHz * IP3 30 dBm typ. @ 1.8 GHz * Gain 8.5 dB typ. @ 1.8 GHz * Low noise figure: 3.0 dB typ @ 1.8 GHz * Gain control dynamic range 20 dB ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (tape and reel) Circuit diagram Pin Configuration 2 OUT/D 4 IN/G typ. 4k Package 1) CGY 50 G2 Q68000-A8370 SOT-143 1, 3 S Maximum ratings Drain-voltage Peak drain-voltage Current control gate voltage Drain-gate voltage Input power 2) Symbol Value 5.5 7.5 -3 ... 0 7.5 16 150 -40...+150 400 Unit V V V V dBm C C mW VD VDP VG VDG PIN TCh Tstg Ptot Channel temperature Storage temperature range Total power dissipation (TS < 82C) 3) Thermal resistance Channel-soldering point 3) RthChS <170 K/W Note: exceeding any of the max. ratings may cause permanent damage to the device. Appropriate handling is required to protect the electrostatic sensitive MMIC against degradation due to excess current spikes. Proper ground connection of leads 1 and 3 ( with minimum inductance ) is required to achieve the guaranteed RF performance, stable operating conditions and adequate tuning. 1) Dimensions see chapter Package Outlines 2) See application circuit. 3) TS is measured on the source 1 lead at the soldering point to the PCB. Siemens Aktiengesellschaft pg. 1/5 11.01.1996 HL EH PD 21 GaAs MMIC Electrical characteristics TA = 25 C, VG = 0 V, VD = 4.5 V, CGY 50 ________________________________________________________________________________________________________ RS = RL = 50 , unless otherwise specified ( for application circuit see next page ) Characteristics Drain current Power gain f = 200 MHz f = 1800 MHz Symbol min - typ 60 max 75 Unit mA dB ID G 7.5 G - 10.0 8.5 0.4 1.1 3.0 dB 2 dB 4.0 dB Gain flatness f = 200 to 1000 MHz f = 800 to 1800 MHz Noise figure f = 200 to 1800 MHz F - Input return loss f = 200 to 1800 MHz RLIN 9.5 12 - Output return loss f = 200 to 1800 MHz RLOUT 9.5 12 - dB Third order intercept point Two tone intermodulation test f1 = 806 MHz, f2 = 810 MHz P = 10 dBm ( both carriers ) 0 IP3 29 31 - dBm 1dB gain compression f = 200 to 1800 MHz P1 dB G 20 16 - dBm Gain control dynamic range f = 200 to 1800 MHz dB Siemens Aktiengesellschaft pg. 2/5 11.01.1996 HL EH PD 21 GaAs MMIC Application Circuit ( f = 800 to 1800 MHz ) CGY 50 ________________________________________________________________________________________________________ V V G C 3 L Input 50Ohm 1 C1 1 3 D D 1 L 2 C 2 C 4 4 Output 50Ohm CGY50 2 50 Ohm Microstripline Legend of components C1 , C2 C3 , C4 L1 , L2 D1 Chip capacitors 100 pF Chip capacitors 1 nF Discrete inductor 1 H or printed microstrip inductor Z diode 5.6 V ( type BZW 22 C5 V 6 ) Note: Operating conditions for PIN, max : RG = RL = 50 , C1, max = 220 pF, VD = 4.5 V, VG current limited < 2 mA. Siemens Aktiengesellschaft pg. 3/5 11.01.1996 HL EH PD 21 GaAs MMIC CGY 50 ________________________________________________________________________________________________________ Total Power Dissipation Ptot = f (TS;TA) 500 P tot [ mW ] 400 300 TS TA 200 100 0 0 50 100 TA ; TS [ C ] Siemens Aktiengesellschaft pg. 4/5 11.01.1996 HL EH PD 21 GaAs MMIC CGY 50 ________________________________________________________________________________________________________ Typical Common Source S-Parameters VG = 0V f GHz 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 Mag 0.25 0.27 0.21 0.20 0.19 0.18 0.18 0.17 0.17 0.17 0.18 0.18 0.19 0.20 0.21 0.22 0.23 0.24 0.26 0.28 S11 Ang -31 -34 -44 -54 -65 -77 -93 -103 -119 -130 -141 -152 -163 -172 179 172 162 153 148 142 Mag 3.30 3.20 3.17 3.09 3.00 2.90 2.81 2.70 2.60 2.50 2.42 2.33 2.24 2.16 2.07 2.01 1.94 1.87 1.81 1.75 VD = 4.5 V S21 Ang 164 158 150 142 134 126 118 111 103 96 94 83 77 71 65 60 54 49 43 38 Mag 0.14 0.14 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.12 0.12 0.12 0.12 0.13 0.13 0.13 0.13 0.14 0.14 0.15 Z0 = 50 S12 Ang 5.0 0.0 -2.0 -3.0 -4.0 -5.0 -5.0 -6.0 -5.0 -5.0 -4.0 -4.0 -3.0 -3.0 -2.0 -2.0 -2.0 -1.0 -1.0 -1.0 Mag 0.05 0.05 0.08 0.10 0.12 0.14 0.16 0.17 0.18 0.19 0.20 0.21 0.21 0.21 0.21 0.21 0.21 0.21 0.21 0.20 S22 Ang -144 -133 105 91 81 74 68 62 56 51 46 42 39 36 33 30 29 28 27 27 Siemens Aktiengesellschaft pg. 5/5 11.01.1996 HL EH PD 21 |
Price & Availability of Q68000-A8370
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |