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| PTZ15B Diodes Zener diode PTZ15B Applications External dimensions (Unit : mm) Land size figure (Unit : mm) 2.0 2.0 2.60.2 Voltage regulation 4.50.2 0.10.02 0.1 5.00.3 Features 1) Small power mold type. (PMDS) 2) High ESD tolerance 1.20.3 PMDS 1.50.2 2.00.2 Construction Silicon epitaxial planar ROHM : PMDS JEDEC : SOD-106 EX. PTZ10B Structure Manufacture Date Taping dimensions (Unit : mm) 4.00.1 2.00.05 1.550.05 1.750.1 0.3 5.50.05 1.55 2.90.1 4.00.1 2.8MAX Absolute maximum ratings (Ta=25C) Param eter P ower dis s ipation J unction tem perature S torage tem perature Sym bol P Tj Ts tg Lim its 1000 150 -55 to +150 Unit mW 5.30.1 0.05 9.50.1 Rev.C 120.2 4.2 1/4 PTZ15B Diodes Electrical characteristics (Ta=25C) Symbol TYP. MIN. 3.600 3.900 Zener voltage : Vz(V) Operating resistance : Zz() Reverse current : IR(A) Temperature coefficiency : *z(mV/) ESD Break down voltage : ESD(kV) Iz(mA) Max. Iz(mA) MAX. VR(V) Iz(mA) MIN. TYP. PTZ 3.6B 40 15 40 60 40 1.0 -2.8 PTZ 3.9B 40 15 40 40 40 1.0 -2.4 PTZ 4.3B 4.300 40 40 40 4.572 4.800 15 20 1.0 -2.1 PTZ 4.7B 4.700 40 40 40 4.924 5.200 10 20 1.0 -1.7 PTZ 5.1B 5.100 40 40 40 5.368 5.700 8 20 1.5 -0.6 PTZ 5.6B 5.600 40 40 40 5.856 6.300 8 20 2.5 1.4 PTZ 6.2B 6.200 40 40 40 6.509 7.000 6 20 3.0 2.5 PTZ 6.8B 6.800 40 40 40 7.280 7.700 6 20 3.5 3.2 PTZ 7.5B 7.500 40 40 40 7.889 8.400 4 20 4.0 4.2 PTZ 8.2B 8.200 40 40 40 8.655 9.300 4 20 5.0 5.0 PTZ 9.1B 9.100 40 40 40 9.747 10.200 6 20 6.0 5.9 PTZ 10B 10.000 40 40 40 10.310 11.200 6 10 7.0 6.9 30kV PTZ 11B 11.000 20 20 20 11.510 12.300 8 10 8.0 7.9 PTZ 12B 12.000 20 20 20 12.500 13.500 8 10 9.0 8.7 PTZ 13B 13.300 20 20 20 13.820 15.000 10 10 10.0 10.1 PTZ 15B 14.700 20 20 20 15.350 16.500 10 10 11.0 11.8 PTZ 16B 16.200 20 20 20 16.860 18.300 12 10 12.0 13.3 PTZ 18B 18.000 20 20 20 19.000 20.300 12 10 13.0 15.0 PTZ 20B 20.000 20.820 20 14 20 15.0 17.4 20 22.400 10 PTZ 22B 22.000 23.850 10 14 10 17.0 19.4 10 24.500 10 PTZ 24B 24.000 10 16 10 25.310 27.600 10 10 19.0 21.6 PTZ 27B 27.000 10 16 10 28.700 30.800 10 10 21.0 24.6 PTZ 30B 30.000 10 18 10 31.570 34.000 10 10 23.0 27.5 PTZ 33B 33.000 10 18 10 34.950 37.000 10 10 25.0 30.8 PTZ 36B 36.000 39.240 40.000 10 20 10 10 27.0 37.0 10 1.The Zener voltage(Vz) is measured 40ms after power is supplied. 2.The operating resistances(ZzZzk) are measured by superimposing a minute alternating current on the regulated current(Iz). TYP. 3.813 4.136 MAX. 4.000 4.400 Test Condition C=150pF R=330 forward and reverse : 10 times Marking (TYPE NO.) TYPE PTZ3.6B PTZ3.9B PTZ4.3B PTZ4.7B PTZ5.1B PTZ5.6B PTZ6.2B PTZ6.8B PTZ7.5B TYPENO. 3.6B 3.9B 4.3B 4.7B 5.1B 5.6B 6.2B 6.8B 7.5B TYPE PTZ8.2B PTZ9.1B PTZ10B PTZ11B PTZ12B PTZ13B PTZ15B PTZ16B PTZ18B TYPENO. 8.2B 9.1B 10B 11B 12B 13B 15B 16B 18B TYPE PTZ20B PTZ22B PTZ24B PTZ27B PTZ30B PTZ33B PTZ36B TYPENO. 20B 22B 24B 27B 30B 33B 36B Rev.C 2/4 PTZ15B Diodes Electrical characteristic curves (Ta=25C) 100 5.1 4.7 4.3 10 3.9 3.6 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 ZENER CURRENT:Iz(mA) 1 0.1 0.01 0.001 0 5 10 15 20 25 30 35 40 45 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS 1200 1000 800 600 400 200 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta() Pd-TaCHARACTERISTICS 0.12 0.1 0.08 TEMP.COEFFICIENCE:z(/) 0.06 0.04 20 0.02 0 -0.02 -0.04 -0.06 -0.08 0 20 30 TIME:t(ms) IFSM-t CHARACTERISTICS 10 40 15 10 5 0 -5 40 35 10000 PRSM REVERSE SURGE MAXIMUM POWER:PRSM(W) 1000 t POWER DISSIPATION:Pd(W) 100 10 1 0.001 0.01 0.1 1 10 100 TIME:t(ms) PRSM-TIME CHARACTERISTICS 1000 Mounted on epoxy board IM=10mA IF=0.5A Rth(j-a) TRANSIENT THAERMAL IMPEDANCE:Rth (/W) TEMP.COEFFICIENCE:z(mV/) 100 1ms time 30 25 300us Rth(j-c) 10 1 0.1 0.001 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 Rev.C 3/4 PTZ15B Diodes 1000 Ta=150 Ta=125 100 10 Ta=25 1 Ta=-25 0.1 Ta=150 Ta=75 Ta=125 1000 REVERSE CURRENT:IR(nA) 100 10 Ta=75 1 0.1 0.01 0.001 Ta=25 f=1MH CAPACITANCE BETWEEN TERMINALS:Ct(pF) ZENER CURRENT:Iz(mA) 100 0.01 Ta=-25 0.001 13 14 15 16 17 ZENER VOLTAGEVz(V) Vz-Iz CHARACTERISTICS 18 0.0001 0 1 2 3 4 5 6 7 8 9 10 11 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 10 0 1 2 3 4 5 6 7 8 9 10 11 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 15.5 15.4 15.3 AVE:15.35V Ta=25 IZ=20mA n=30pcs 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 AVE:0.0751nA Ta=25 VR=11V n=30pcs 350 340 330 320 310 300 290 280 270 260 250 AVE:279.1pF Ta=25 f=1MHz VR=0V n=10pcs REVERSE CURRENT:IR(nA) 15.2 15.1 15 Vz DISPERSION MAP IR DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) ZENER VOLTAGE:Vz(V) Ct DISPERSION MAP 10000 30 ELECTROSTATIC DISCHARGE TEST ESD(KV) DYNAMIC IMPEDANCE:Zz() 1000 100 10 1 0.1 0.1 1 ZENER CURRENT:Iz(mA) Zz-Iz CHARACTERISTICS 10 25 20 15 10 5 0 No break at 30kV C=200pF R=0 C=100pF R=1.5k C=150pF R=330 ESD DISPERSION MAP Rev.C 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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