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| PT481/PT481F/PT483F1 PT481/PT481F/ PT483F1 s Features 1. Epoxy resin package 2. Narrow acceptance ( : Typ. 13 ) 3. High sensitivity ( IC : MIN. 1.5mA at E e = 0.1mW/cm 2 ) : PT481/PT483F1 ( IC : MIN. 0.9mA at E e = 0.1mW/cm 2 ) : PT481F 4. Visible light cut-off type : PT481F/PT483F1 5. Long lead pin type : PT483F1 Narrow Acceptance High Sensitivity Phototransistor s Outline Dimensions PT481/PT481F 1.5 2 - C0.5 Rest of gate 0.3MAX. 3.0 Detector center 1.15 0.75 4.0 R0.5 0.8MAX. 0.15 0.8MAX. 1.7 60 ( Unit : mm ) Epoxy resin g R0.8 0.1 Mark (black) PT481F 2.950.2 2.15 0.2 0.5MIN. 17.5 +1.5 -1.0 2.54 2 - 0.4 2 - 0.45 2 - 0.8 1.6 2 2.8 1 Emitter 2 Collector s Applications 1. VCRs, cassette tape recorders 2. Floppy disk drives 3. Optoelectronic switches 4. Automatic stroboscopes 1 2 g Epoxy resin PT481 PT481F PT483F1 Detector center 1.15 0.75 4.0 R0.5 0.8MAX. 0.15 60 Light blue transparent resin Visible light cut-off resin ( black ) 2 - 0.6 2.95 0.2 2.15 0.2 ( Ta = 25C ) Unit V V mA mW C C C 0.5MIN. s Absolute Maximum Ratings Parameter Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Operating temperature Storage temperature *1 Soldering temperature Symbol V CEO V ECO IC PC T opr T stg T sol 3.0 Rating 35 6 50 75 - 25 to +85 - 40 to +85 260 2.54 2 - 0.4 2 - 0.45 2 - 0.8 1.6 2 2.8 1 2 1 Emitter 2 Collector 1 g Visible light cut-off resin ( black ) *1 For 3 seconds at the position of 1.4mm from the bottom face of resin package " In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device. " 1.4 Mark (black) 1.7 0.8MAX. 18.5 40.0 R0.80.1 Rest of gate 0.3MAX. 1.5 2 - C0.5 3.0 Epoxy resin g 1.4 1 PT481/PT481F/PT483F1 s Electro-optical Characteristics Parameter PT481 *2 Collector PT481F current PT483F1 Collector dark current *2 ( Ta = 25C ) Symbol IC ICEO V CE(sat) p tr tf Conditions VCE = 2V Ee = 0.1mW/cm 2 VCE = 10V, E e = 0 Ic = 2.5mA Ee = 1mW/cm 2 VCE = 2V, I C = 10mA RL = 100 MIN. 1.5 0.9 1.5 TYP. 10 0.7 800 860 80 70 MAX. 25 27 4.0 10- 6 1.0 Unit mA mA mA A V nm nm s s Collector-emitter saturation voltage Peak emission wavelength Response time PT481 PT481F/PT483F1 Rise time Fall time *2 E e : Irradiance by CIE standard light source A ( tungsten lamp ) Fig. 1 Collector Power Dissipation vs. Ambient Temperature 80 Collector power dissipation P C ( mW ) 70 60 50 40 30 20 10 0 - 25 Fig. 2 Collector Dark Current vs. Ambient Temperature 10 - 4 5 (A) 10 - 5 5 10 - 6 5 10 - 7 5 10 - 8 5 10 - 9 5 10 - 10 5 10 - 11 5 - 25 V CE = 10V 0 25 50 75 85 Ambient temperature Ta ( C ) 100 Collector dark current I CEO 0 25 50 75 Ambient temperature T a ( C ) 100 Fig. 3 Relative Collector Current vs. Ambient Temperature 175 V CE = 2V E e = 0.1mW/cm2 150 Fig.4-a Collector Current vs. Irradiance (PT481 ) 50 V CE = 2V T a = 25C Relative collector current ( % ) 125 Collector current I C ( mA ) 20 10 100 5 75 2 50 - 25 0 25 50 75 Ambient temperature Ta ( C ) 100 1 2 5 10 - 1 2 Irradiance E e ( mW/cm2 ) 5 1 PT481/PT481F/PT483F1 Fig.4-b Collector Current vs. Irradiance ( PT481F/PT483F1 ) 50 V CE = 2V T a = 25C Collector current I C ( mA ) Fig.5-a Collector Current vs. Collector-emitter Voltage (PT481 ) 25 T a = 25C 20 Ee = 0.2mW/cm2 2 P C ( MAX. ) Collector current I C ( mA ) 20 10 15 0.15m W/cm 5 0.1mW/cm 10 2 2 0.08mW/cm 2 0.06mW/cm 5 2 0.04mW/cm2 0.02mW/cm2 0 1 2 3 4 5 Collector- emitter voltage VCE ( V ) 6 1 2 5 10 -1 2 Irradiance E e ( mW/cm2 ) 5 1 0 Fig.5-b Collector Current vs. Collector-emitter Voltage ( PT481F/PT483F1 ) 16 14 Collector current I C ( mA ) 12 10 8 0 = e 0.2 mW /cm 2 Fig. 6 Spectral Sensitivity 100 T a = 25C 80 T a = 25C E 0.1 5m W/ cm 2 P C ( MAX. ) 2 Relative sensitivity ( % ) 60 PT481 40 PT481F PT483F1 m .1mW/c 6 4 2 0 m2 0.08mW/c m2 0.06mW/c 2 0.04mW/cm 0.02mW/cm2 0 2 4 6 8 10 12 14 Collector-emitter voltage V CE ( V ) 16 20 0 400 500 600 700 800 900 Wavelength ( nm ) 1000 1100 Fig. 7 Response Time vs. Load Resistance 1000 V CE = 2V IC = 10mA T a = 25C Response time ( s ) 100 tr tf Test Circuit for Response Time Output Input 90% Output td tr 10% VCC td 10 ts RL ts tf 1 10 100 1000 Load resistance R L ( ) 5000 PT481/PT481F/PT483F1 Fig. 8 Sensitivity Diagram ( Ta = 25C ) - 20 - 10 0 100 10mA Collector-emitter saturation voltage V CE(sat) ( V ) 80 Relative sensitivity ( % ) IC = 0.5mA 20mA 0.5 - 30 + 30 1mA 2mA 5mA 7mA 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.003 + 10 + 20 Fig.9-a Collector-emitter Saturation (PT481 ) Voltage vs. Irradiance ( Ta = 25C ) 2.0 - 40 60 + 40 - 50 - 60 - 70 - 80 - 90 40 + 50 + 60 20 + 70 + 80 0 Angular displacement + 90 0.01 0.02 0.05 0.1 0.2 Irradiance E e ( mW/cm2 ) Fig.9-b Collector-emitter Saturation Voltage vs. Irradiance (PT481F/PT483F1 ) ( Ta = 25C ) 2.0 1.8 1mA 2mA Collector-emitter saturation voltage V CE(sat) ( V ) IC = 0.5mA 5mA 1.6 1.4 1.2 1.0 0.8 0.6 0.005 0.01 0.02 0.05 0.1 0.2 Irradiance E e ( mW/ cm2 ) Fig.10 Relative Output vs. Distance ( Emitter : GL480 ) ( PT481F/PT483F1 ) 100 50 10mA 20mA Relative output ( % ) 20 10 5 2 1 0.5 0.5 1 0.2 0.5 2 5 20 50 1 10 Distance between emitter and detector d ( mm ) q Please refer to the chapter " Precautions for Use." |
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