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| IGBT MODULE CIRCUIT Dual 150A 600V PDMB150A6 OUTLINE DRAWING 4- fasten- tab No 110 Dimension(mm) Approximate Weight : 430g MAXMUM RATINGS (Tc=25C) Item Collector-Emitter Voltage Gate - Emitter Voltage Collector Current DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg VISO FTOR PDMB150A6 600 +/ - 20 150 300 560 -40 to +150 -40 to +125 2500 2 2 Unit V V A W C C V N*m Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals ELECTRICAL CHARACTERISTICS (Tc=25C) Characteristic Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time Symbol ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff Test Condition VCE=600V,VGE=0V VGE=+/- 20V,VCE=0V IC=150A,VGE=15V VCE=5V,IC=150mA VCE=10V,VGE=0V,f=1MHz VCC= 300V RL= 2 ohm RG= 5.1 ohm VGE= +/- 15V Min. 4.0 - Typ. 2.1 15,000 0.15 0.25 0.2 0.45 Max. 2.0 1.0 2.6 8.0 0.3 0.4 0.35 0.7 Unit mA A V V pF s FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25C) Item Symbol Rated Value Forward Current DC 1 ms IF IFM 150 300 Unit A Typ. 1.9 0.15 Characteristic Peak Forward Voltage Reverse Recovery Time Symbol VF trr Test Condition IF=150A,VGE=0V IF=150A,VGE=-10V,di/dt=150A/s Min. - Max. 2.4 0.25 Unit V s Unit C/W THERMAL CHARACTERISTICS Characteristic Thermal Impedance IGBT DIODE Symbol Rth(j-c) Test Condition Junction to Case Min. - Typ. - Max. 0.22 0.45 PDMB150A6 Fig.1- Output Characteristics (Typical) TC=25 300 Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 16 TC=25 IC=60A 300A VGE=20V 12V 250 Collector to Emitter Voltage V CE (V) 15V 10V 14 150A 12 10 8 6 4 2 0 Collector Current I C (A) 200 150 9V 100 50 8V 7V 0 0 2 4 6 8 10 0 4 8 12 16 20 Collector to Emitter Voltage VCE (V) Gate to Emitter Voltage VGE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 16 Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) 400 350 300 250 200 16 TC=125 IC=60A 300A Collector to Emitter Voltage V CE (V) 150A 12 10 8 6 4 2 0 Collector to Emitter Voltage V CE (V) 14 RL=2 TC=25 14 Gate to Emitter Voltage VGE (V) 12 10 8 VCE=300V 150 6 200V 100 50 0 0 150 300 450 600 100V 4 2 0 0 4 8 12 16 20 Gate to Emitter Voltage VGE (V) Total Gate Charge Qg (nC) Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) 100000 50000 20000 Fig.6- Collector Current vs. Switching Time (Typical) 1 0.9 0.8 Switching Time t (s) Cies Coes Cres VGE=0V f=1MHZ TC=25 VCC=300V RG=5.1 VGE=15V TC=25 Capacitance C (pF) 10000 5000 2000 1000 500 200 100 0.2 0.5 1 2 5 10 20 50 100 200 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 40 80 120 toff ton tf tr 160 Collector to Emitter Voltage VCE (V) Collector Current IC (A) PDMB150A6 Fig.7- Series Gate Impedance vs. Switching Time (Typical) 5 Fig.8- Forward Characteristics of Free Wheeling Diode (Typical) 300 2 VCC=300V IC=150A VG=15V TC=25 toff ton tr TC=25 250 TC=125 Switching Time t (s) Forward Current I F (A) 1 200 0.5 150 tf 0.2 100 0.1 50 0.05 1 10 100 0 0 1 2 3 4 Series Gate Impedance RG () Forward Voltage VF (V) Fig.9- Reverse Recovery Characteristics (Typical) 500 Fig.10- Reverse Bias Safe Operating Area (Typical) 1000 500 200 Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) IF=150A TC=25 trr RG=5.1 VGE=15V TC125 200 Collector Current I C (A) 200 400 600 800 1000 1200 100 50 20 10 5 2 1 0.5 0.2 100 50 20 10 IRrM 5 0 0.1 0 200 400 600 800 -di/dt (A/s) Collector to Emitter Voltage V CE (V) Fig.11- Transient Thermal Impedance 5x10 -1 FRD (/W) 2x10 -1 1x10 -1 5x10 -2 IGBT Transient Thermal Impedance Rth (J-C) 2x10 -2 1x10 -2 5x10 -3 TC=25 2x10 -3 1x10 -3 -5 10 10 -4 10 -3 10 -2 10 -1 1 Shot Pulse 1 10 1 Time t (s) |
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