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Philips Semiconductors
Product specification
Rectifier diodes schottky barrier
FEATURES
* Low forward volt drop * Fast switching * Reverse surge capability * High thermal cycling performance * Low thermal resistance
PBYR4025WT series
SYMBOL
QUICK REFERENCE DATA VR = 20 V / 25 V IO(AV) = 40 A VF 0.46 V SOT429 (TO247)
DESCRIPTION
a1 1 k2
a2 3
GENERAL DESCRIPTION
Dual, common cathode schottky rectifier diodes in a plastic envelope. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR4025WT series is supplied in the conventional leaded SOT429 (TO247) package.
PINNING
PIN 1 2 3 tab anode 1 (a) cathode (k) anode 2 (a) cathode
1
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) IFRM IFSM PARAMETER CONDITIONS MIN. -20 20 20 20 40 40 180 200 MAX. -25 25 25 25 UNIT V V V A A A A
Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage Tmb 109 C Average output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current, per diode square wave; = 0.5; Tmb 128 C t = 25 s; = 0.5; Tmb 128 C t = 10 ms t = 8.3 ms sinusoidal Tj = 125 C prior to surge; with reapplied VRRM(max) Repetitive peak reverse current tp = 2 s; = 0.001 per diode Storage temperature Operating junction temperature
IRRM Tstg Tj
-65 -
2 175 150
A C C
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS per diode both diodes in free air MIN. TYP. 45 MAX. 1.5 1.0 UNIT K/W K/W K/W
November 1998
1
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes schottky barrier
STATIC CHARACTERISTICS
Tj = 25 C unless otherwise stated SYMBOL VF IR Cd PARAMETER Forward voltage (per diode) Reverse current (per diode) Junction capacitance (per diode) CONDITIONS IF = 20 A; Tj = 125C IF = 40 A; Tj = 125C IF = 40 A VR = VRRM VR = VRRM; Tj = 100 C f = 1MHz; VR = 5V; Tj = 25 C to 125 C
PBYR4025WT series
MIN. -
TYP. 0.40 0.50 0.60 2.0 30 900
MAX. 0.46 0.54 0.64 10 80 -
UNIT V V V mA mA pF
15
PF / W Vo = 0.38 V Rs = 0.004 Ohms
PBYR4025WT
Tmb(max) / C 127.5 D = 1.0
1A 100mA
IR / A 150 C
PBYR1625
0.5 10 0.2 0.1 5
I tp D= tp T t
1mA
125 C
135
10mA 100 C 75 C 50 C
142.5
100uA Tj = 25 C 10uA
T
0
0
5
10
15 IF(AV) / A
20
25
150 30
1uA 0 5 10 VR / V 15 20 25
Fig.1. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x D.
PBYR1625
Fig.3. Typical reverse leakage current per diode; IR = f(VR); parameter Tj
50
IF / A Tj = 25 C Tj = 125 C
10000
Cd / pF
PBYR1625
40 typ 30 max
1000
20
10
0
0
0.2
0.4 VF / V
0.6
0.8
1
100
1
10 VR / V
100
Fig.2. Typical and maximum forward characteristic IF = f(VF); parameter Tj
Fig.4. Typical junction capacitance per diode; Cd = f(VR); f = 1 MHz; Tj = 25C to 125 C.
November 1998
2
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes schottky barrier
PBYR4025WT series
10
Transient thermal impedance, Zth j-mb (K/W)
1
0.1
0.01
P D
tp
D=
tp T t
0.001 1us
T
10us
100us 1ms 10ms 100ms 1s 10s pulse width, tp (s) PBYR4025WT
Fig.5. Transient thermal impedance per diode; Zth j-mb = f(tp).
November 1998
3
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes schottky barrier
MECHANICAL DATA
Dimensions in mm Net Mass: 5 g
5.3 3.5 21 max 15.5 max seating plane 7.3 16 max 5.3 max 1.8
PBYR4025WT series
o 3.5 max
2.5 4.0 max 1 2.2 max 3.2 max 5.45 2 3 0.9 max 1.1 5.45 0.4 M
15.5 min
Fig.6. SOT429 (TO247); pin 2 connected to mounting base.
Notes 1. Refer to mounting instructions for SOT429 envelope. 2. Epoxy meets UL94 V0 at 1/8".
November 1998
4
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes schottky barrier
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values
PBYR4025WT series
This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
November 1998
5
Rev 1.100

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