NTE62 Silicon NPN Transistor High Voltage, Horizontal Deflection Output for TV
Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2500V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Collector Dissipation (TC = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W Operating Junction Temperature, Tj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +150C Electrical Characteristics: (TA = +25C unles otherwise specified)
Parameter Collector Cutoff Current Symbol ICBO ICEO Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency IEBO hFE VCE(sat) VBE(sat) tf Test Conditions VCB = 1000V, IE = 0 VCB = 2500V, IE = 0 VCE = 900V, IB = 0 VEB = 6V, IC = 0 VCE = 10V, IC = 1.5A IC = 1.5A, IB = 0.5A IC = 1.5A, IB = 0.5A IC = 1.5A Min - - - - 3 - - - Typ - - - - - - - - Max 50 1.0 10 1.0 15 10 1.25 1.0 Unit A mA mA mA - V V s
.135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane
.312 (7.93) Min E .215 (5.45)
.040 (1.02) 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes)
.430 (10.92)
.188 (4.8) R Max
.525 (13.35) R Max B C
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