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| NTE593 Silicon Diode, High Speed Switch Description: The NTE593 is a silicon epitaxial high-speed diode in an SOT-23 type surface mount package. This device is intended for high-speed switching in hybrid thick-film circuits. Absolute Maximum Ratings: Continuous Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85V Non-Repetitive Peak Forward Current (t = 1s), IFSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Average Rectified Forward Current (Average over any 20ms period, Note 1), IF(Av) . . . . . . 250mA DC Forward Current (TA +25C, Note 2), IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA Repetitive Peak Forward Current, IFRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA Total Power Dissipation (TA +25C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Ambient (Note 2), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 430K/W Note 1. Measured under pulse conditions: tp 0.5ms, IF(AV) = 150mA, t(av) 1ms, for sinusoidal operation. Note 2. Mounted on a ceramic substrate of .314 (8mm) x .393 (10mm) x .027 (0.7mm). Electrical Characteristics: (TJ = +25C unless otherwise specified) Parameter Forward Voltage Symbol VF Test Conditions IF = 1mA IF = 10mA IF = 50mA IF = 150mA Reverse Current Diode Capacitance Reverse Recovery Time (When switched from IF = 30mA to IR = 30mA Recovery Charge (When switched from IF = 10mA to VR = 5V IR Cd trr VR = 75V VR = 75V, TJ = +150C VR = 0, f = 1MHz measured at IR = 1mA, RL = 100 RL = 100 Min - - - - - - - - Typ - - - - - - - - Max 715 855 1000 1250 1 50 2 6 Unit mV mV mV mV A A pF ns Qs - - 45 pC .016 (0.48) K A N.C. .098 (2.5) Max .037 (0.95) .074 (1.9) .118 (3.0) Max .051 (1.3) .043 (1.1) .007 (0.2) |
Price & Availability of NTE593
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