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| Datasheet File OCR Text: |
| NTE491 MOSFET N-Ch, Enhancement Mode High Speed Switch Absolute Maximum Ratings: Drain-Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Drain-Gate Voltage (RGS = 1M), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Gate-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Drain Current, ID Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Thermal Resistance, Junction-to-Ambient, Rth (JA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 312.5C/W Maximum Lead Temperature (During Soldering, 1/16" from case, 10sec), TL . . . . . . . . . . . . +300C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter OFF Characteristics Zero-Gate-Voltage Drain Current IDSS V(BR)DSS IGSSF VGS(Th) rDS(on) VDS(on) Id(on) gfs VDS = 48V, VGS = 0 VDS = 48V, VGS = 0, TJ = +125C Drain-Source Breakdown Voltage Gate-Body Leakage Current, Forward ON Characteristics (Note 1) Gate Threshold Voltage Static Drain-Source ON Resistance ID = 1mA, VDS = VGS VGS = 10V, ID = 500mA VGS = 4.5V, ID = 75mA Drain-Source ON-Voltage VGS = 10V, ID = 500mA VGS = 4.5V, ID = 75mA ON-State Drain Current Forward Transconductance VGS = 4.5V, VDS = 10V VDS = 10V, ID = 200mA 0.8 - - - - 75 100 - - - - - - - 3.0 5.0 6.0 2.5 0.45 - - V V V mA mhos VGS = 0, ID = 10A VGSF = 15V, VDS = 0 - - 60 - - - - - 1.0 1.0 - -10 A mA V nA Symbol Test Conditions Min Typ Max Unit Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%. Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Dynamic Characteristics Input Capacitance Reverse Transfer Capacitance Output Capacitance Ciss Crss Coss VDS = 25V, VGS = 0, f = 1MHz - - - - - - 60 25 5.0 pF pF pF Symbol Test Conditions Min Typ Max Unit Switching Characteristics Turn-On Delay Time Turn-Off Delay Time ton toff VDD = 15V, ID = 500mA, Rgen = 25, RL = 25 - - - - 10 10 ns ns .135 (3.45) Min .210 (5.33) Max Seating Plane .500 (12.7) Min .021 (0.45) Dia Max SGD .100 (2.54) .050 (1.27) .156 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max |
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