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| NTE3222 Optoisolator NPN Transistor Output Description: The NTE3222 is an optically coupled isolator in a 4-Lead DIP type package containing a GaAs light emitting diode and an NPN silicon phototransistor. Features: D High Isolation Voltage D High Collector-Emitter Voltage D High Speed Switching Applications: D Power Supplies D Telephone/FAX D FA/FO Equipment D Programmable Logic Controller Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Diode Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V DC Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mA Power Dissipation (Per Channel) PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5mW/C Peak Forward Current (Note 1), IFP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Transistor Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter-Collector Voltage, VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current (Per Channel), IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Power Dissipation (Per Channel) PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5mW/C Total Device Isolation Voltage (Note 2), BV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5000Vrms Operating Ambient Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +100C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Note 1. Pulse width = 100s, duty cycle = 1%. Note 2. AC voltage for 1 minute at TA = +25C, RH = 60% between input and output. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Diode Forward Voltage Reverse Current Terminal capacitance Transistor Collector-Emitter Dark Current Coupled Current Transfer Ratio (IC/IF) Collector Saturation Voltage Isolation Resistance Isolation Capacitance Rise Time Fall Time CTR RI-O CI-O tr tf Pin Connection Diagram Symbol VF IR Ct ICEO Test Conditions IF = 10mA VR = 5V V = 0V, f = 1MHz VCE = 80V, IF = 0mA IF = 5mA, VCE = 5V VI-O = 1kVDC V = 0V, f = 1MHz VCC = 10V, IC = 2mA, RL = 100 Min - - - - 80 - 1011 - - - Typ 1.17 - 50 - 300 - - 0.5 3 5 Max 1.40 5 - 100 600 0.3 - - - - Unit V A pF nA % V pF s s VCE(sat) IF = 10mA, IC = 2mA Anode Cathode 1 2 4 Collector 3 Emitter 4 3 .252 (6.4) 1 2 .180 (4.58) .176 (4.47) .099 (2.5) Min .100 (2.54) .309 (7.85) |
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