 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| NTE2506 Silicon NPN Transistor High Frequency Video Driver Description: The NTE2506 is a silicon NPN epitaxial transistor in a TO126 type package designed for use in the cascode stage of the driver for high-resolution color graphics monitors. Features: D High Breakdown Voltage D Low Output Capacitance Absolute Maximum Ratings: Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95V Collector-Emitter Voltage (RBE = 100), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V DC Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA Total Power Dissipation (TS +85C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Soldering Point (TS +85C, Note 1), RthJS . . . . . . . . . . 18K/W Note 1. TS is the temperature at the soldering point of the collector lead. Electrical Characteristics: (TJ = +25C unless otherwise specified) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Symbol V(BR)CBO IC = 0.1mA V(BR)CEO IC = 10mA V(BR)CER IC = 10mA, RBE = 100 Emitter-Base Breakdown Voltage Collector Cutoff Current V(BR)EBO IE = 0.1mA ICES ICBO DC Current Gain Transition Frequency Collector-Base Capacitance Collector Capacitance hFE fT Ccb Cc IB = 0, VCE = 50V IE = 0, VCB = 50V IC = 100mA, VCE = 10V, TA = +25C IC = 100mA, VCE = 10V, f = 100MHz, TA = +25C IC = 0, VCB = 10V, f = 1MHz, TA = +25C IE = ie = 0, VCB = 10V f = 1MHz Test Conditions Min 115 95 110 3 - - 20 0.8 - - Typ - - - - - - 35 1.2 2.0 3.5 Max Unit - - - - 100 20 - - - - GHz pF pF V V V V A A .330 (8.38) Max .175 (4.45) Max .450 (11.4) Max .118 (3.0) Dia .655 (16.6) Max .030 (.762) Dia E C B .090 (2.28) .130 (3.3) Max |
Price & Availability of NTE2506
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |