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| NTE2426 (NPN) & NTE2427 (PNP) Silicon Complementary Transistors Darlington Switch Description: The NTE2426 and NTE2427 are silicon planer Darlington transistors in a SOT-89 type surface mount package designed for use in industrial switching applications such as print hammer, solenoid, relay, and lamp drivers. Absolute Maximum Ratings: Collector-Base Voltage (Open Emitter), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V Collector-Emitter Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter-Base Voltage (Open Collector), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Total Power Dissipation (TA +25C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Operating Junction Temperature (Note 2), TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Ambient (Note 1, Note 2), RthJA . . . . . . . . . . . . . . . . . . . . 125K/W Thermal Resistance, Junction-to-Tab (Note 2), RthJTAB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10K/W Note 1. Device mounted on a ceramic substrate; area = 2.5cm2, thickness = 0.7mm. Note 2. Based on maximum average junction temperature in line with common industrial practice. The resulting higher junction teperature of the output transistor part is taken into account. Electrical Characteristics: (TJ = +25C unles otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICES IEBO hFE Test Conditions VCER = 80V, VBE = 0 VEB = 4V, IC = 0 VCE = 10V, IC = 150mA, Note 3 VCE = 10V, IC = 500mA, Note 3 Min - - 1000 2000 Typ - - - - Max 10 10 - - Unit A A Note 3. Measured under pulsed conditions. Electrical Characteristics (Cont'd): (TJ = +25C unles otherwise specified) Parameter Collector-Emitter Saturation Voltage Symbol VCE(sat) VBE(sat) ton toff Test Conditions IC = 500mA, IB = 0.5mA IC = 500mA, IB = 0.5mA, TJ = +150C IC = 500mA, IB = 0.5mA IC = 500mA, IBon = -IBoff = 0.5mA Min - - - - - Typ - - - 400 1500 Max 1.3 1.3 1.9 - - Unit V V V ns ns Base-Emitter Saturation Voltage Turn-On Time Turn-Off Time Schematic Diagram NTE2426 NPN C B B NTE2427 PNP C E E .174 (4.42) .059 (1.5) .067 (1.7) .096 (2.46) .161 (4.1) E C B .041 (1.05) Min .015 (0.32) .020 (.508) .059 (1.5) .118 (3.0) Bottom View |
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