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| NTE231 Silicon Controlled Rectifier (SCR) TV Deflection Circuit Features: D CTV 110 - CRT Horizontal Deflection D Comutater Switch Absolute Maximum Ratings: Repetitive Peak Off-State Voltage (TJ = +100C), VDRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V Non-Repetitive Peak Forward Voltage (TJ = +100C), VDSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750V Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V RMS On-State Current (Note 1), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Average On-State Current (Note 1), IT(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2A Surge Current (Note 1), ITSM 50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A 60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70A Critical Rate-of-Rise of On-State Current, di/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200A/s Peak Gate Power Dissipation (Note 2), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W Average Gate Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Minimum Peak Reverse Gate Voltage, VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -30V Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +100C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4C/W Note 1. Single Phase, Half Sine Wave at 50Hz, TC = +60C Note 2. 10s duration Electrical Characteristics: Parameter Peak Off-State Current Peak On-State Voltage DC Gate Trigger Current Symbol IDRM VTM IGT Test Conditions VDRM = 700V, TJ = +100C ITM = 20A, TC = +25C TC = -40C VD = 6V, RL = 10 TC = +25C Min - - - - Typ - - - - Max 1.5 3.0 75 45 Unit mA V mA mA Electrical Characteristics (Cont'd): Parameter DC Gate Non-Trigger Voltage DC Gate Non-Trigger Current Holding Current Turn-Off Time Symbol VGD IGD IH tq Test Conditions VD = 700V, TC = +100C VD = 700V, TC = +100C VD = 6V, RL = 10 ITM = 8A, di/dt = 20A/s, VD = 610V, dv/dt = 700V/s, f = 15.7kHz, TC = +70C, VG = 25V VDRM = 500V, VG = -2.5V, TC = +70C, RG = 100 Min 0.2 1.0 - - Typ - - - - Max - - 100 4.5 Unit V mA mA s Critical Exponential Rate-of-Rise of Forward Blocking State Voltage dv/dt 700 - - V/s .485 (12.3) Dia .295 (7.5) .062 (1.57) .031 (0.78) Dia .360 (9.14) Min Gate .960 (24.3) .580 (14.7) .147 (3.75) Dia (2 Places) .200 (5.08) .145 (3.7) R Max Anode/Case Cathode |
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