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| NTE2318 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2318 is a high-voltage, high-speed, switching NPN transistor with an internal damper diode in a TO218 type package. This device is specifically designed for use in large screen color deflection circuits. Features: D Collector-Emitter Voltage: VCE = 1500V D Collector-Emitter Sustaining Voltage: VCEO(sus) = 700V D Switching Time with Inductive Loads: tf = 0.5s (Typ) @ IC = 4.5A D Internal Flyback Diode Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Base Current, IB Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W/C Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1C/W Maximum Lead Temperature (During Soldering, 1/8" from case, 5sec), TL . . . . . . . . . . . . . . +275C Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle 10%. Electrical Characteristics: (TC = +25C, unless otherwise specified) Parameter OFF Characteristics (Note 1) Collector-Emitter Sustaining Voltage VCEO(sus) IC = 100mA, IB = 0 Collector Cutoff Current ICES VCE = 1500V, VBE = 0 VCE = 1500V, VBE = 0, TC = +125C Emitter-Base Leakage Current IEBO VEB = 6V, IC = 0 700 - - - - - - - - 0.1 2.0 300 V mA mA mA Symbol Test Conditions Min Typ Max Unit Electrical Characteristics (Cont'd): (TC = +25C, unless otherwise specified) Parameter ON Characteristics (Note 1) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Dynamic Characteristics Current-Gain Bandwidth Product Output Capacitance Switching Characteristics Storage Time Fall Time ts tf IC = 4.5A, IB = 1.8A, LB = 10H - - 8.0 0.5 - - s s fT Cob IC = 0.1A, VCE = 5V, f = 1MHz VCB = 10V, IE = 0, f = 0.1MHz - - 7 125 - - MHz pF hFE VCE(sat) VBE(sat) IC = 4.5A, VCE = 5V IC = 4.5A, IB = 2A IC = 4.5A, IB = 2A 2.25 - - - - - - 1 1.3 V V Symbol Test Conditions Min Typ Max Unit Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle 10%. .600 (15.24) .060 (1.52) .173 (4.4) C .156 (3.96) Dia. B C E .550 (13.97) .430 (10.92) .500 (12.7) Min .055 (1.4) .015 (0.39) .216 (5.45) NOTE: Dotted line indicates that case may have square corners |
Price & Availability of NTE2318
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