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| NTE16004 (PNP) & NTE16005 (NPN) Silicon Complementary Transistors High Current, General Purpose Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.057mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17.5C/W Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage Collector Cutoff Current V(BR)CEO) IC = 100mA, IB = 0 ICEX IEBO hFE VCE(sat) VCE = 100V, VBE = 1.5V VCE = 70V, VBE = 1.5V, TC = +150C Emitter Cutoff Current ON Characteristics (Note 1) DC Current Gain IC = 500mA, VCE = 4V IC = 1A, VCE = 2V Collector-Emitter Saturation Voltage NTE16004 NTE16005 Base-Emitter ON Voltage Small-Signal Characteristics Small-Signal Current Gain hfe IC = 50mA, VCE = 4V, f = 10MHz 5 - - VBE(on) IC = 500mA, VCE = 4V IC = 500mA, IB = 50mA 30 10 - - - - - - - - 130 - 0.7 0.5 1.1 V V V VBE = 7V, IC = 0 75 - - - - - - - - 0.1 5.0 0.1 V mA mA mA Symbol Test Conditions Min Typ Max Unit Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%. Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Switching Characteristics Turn-On Time NTE16004 NTE16005 Turn-Off Time NTE16004 NTE16005 toff VCC = 30V, IC = 500mA, IB1 = IB2 = 50mA ton VCC = 30V, IC = 500mA, IB1 = 50mA - - - - - - - - 100 80 1000 800 ns ns ns ns Symbol Test Conditions Min Typ Max Unit .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector/Case 45 .031 (.793) |
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