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DOMINANT Innovating Illumination TM TM Semiconductors SPNovaLED DATA SHEET: InGaN Warm White High Lumens : 350 mA SPNovaLED TM Featuring a staggering brilliance and significant flux output, the SPNovaLEDTM showcases the latest technological advent in this range. With its extremely high level of brightness and the ultra low high profile, which is only 1.5 mm are highly suitable for both conventional lighting and specialized application such as automotive signal lights, traffic lights, channel lights, tube lights and garden lights among others. Features: > Super high brightness surface mount LED. > High flux output; typical 42 lumens > 120 viewing angle. > Compact package outline (LxWxH) of 6.0 x 6.0 x 1.5mm. > Ultra low height profile - 1.5 mm. > Designed for high current drive; typically 350 mA. > Low thermal resistance; Rth (js) = 18 K/W. > Qualified according to JEDEC moisture sensitivity Level 2. > Compatible to IR reflow soldering. > Environmental friendly; RoHS compliance. > SPNovaLED are Class 1M LED products. Do not view directly with optical instrument. Applications: > > > > Automotive: exterior applications, eg: Fog-lamp, Rear Mirror Lighting, etc Communication: FlashLED Industry: white goods (eg: Oven, microwave, etc.). Lighting: garden light, architecture lighting, general lighting. etc (c) 2005 SPNovaLED is a trademark of DOMINANT Semiconductors. All rights reserved. Product specifications are subject to change without notice. 1 13/09/2006 V1.0 DOMINANT TM Semiconductors Innovating Illumination InGaN Warm White High Lumens : 350 mA Part Ordering Number NPF-TSD-ABD-1 * NPF-TSD-AB * NPF-TSD-AC * NPF-TSD-AD Chip Technology / Color InGaN Viewing Angle 120 Luminous Intensity @ IF = 350mA (mcd) 9000.0 - 18000.0 9000.0 - 11250.0 11250.0 - 14000.0 14000.0 - 18000.0 NOTE 1. Luminous intensity is measured with an accuracy of 11%. 2. Wavelength binning is carried for all units as per the wavelength-binning table. Only one wavelength group is allowed for each reel. Electrical Characteristics at Ta=25C Part Number NPF-TSD Typ. (V) 3.6 Vf @ If = 350mA Max. (V) 4.0 Forward voltages are measure using a current pulse of 1 ms and with an accuracy of 0.1V. Material Material Lead-frame Package Encapsulant Soldering Leads Cu Alloy With Ag Plating High Temperature Resistant Plastic, PPA Silicone Resin Sn-Sn Plating 2 13/09/2006 V1.0 DOMINANT TM Semiconductors Innovating Illumination InGaN Warm White High Lumens : 350 mA Absolute Maximum Ratings Maximum Value DC forward current Peak pulse current Reverse Voltage ESD threshold (HBM) LED junction temperature Operating temperature Storage temperature 350 1000 Not designed for reverse bias 2000 120 -40 ... +100 -40 ... +100 Unit mA mA V V C C C Correlated Color Temperature (CCT) Color Bin A B C Minimum CCT (K) 3300 3000 2800 Maximum CCT (K) 3600 3300 3000 Note: CCT values provided for each of the color bins are an approximation based on correlation. Correlation Between Luminous Intensity And Luminous Flux IV Bin AB AC AD Luminous Intensity (mcd) Min 9000 11250 14000 Luminous Flux (lm) Min 25.0 32.0 39.0 Max 11250 14000 18000 Max 32.0 39.0 50.0 Note: Data provided above is based on approximation. 3 13/09/2006 V1.0 DOMINANT TM Semiconductors Innovating Illumination InGaN Warm White High Lumens: 350 mA Color Bin White Bin Structure 0.48 0.44 0.40 0.36 0.32 0.28 0.24 0.20 0.39 0.40 0.41 0.42 0.43 0.44 0.45 0.46 0.47 * * A * * B * * C * * Chromaticity coordinate groups are measured with an accuracy of 0.01. Bin A B C Cx Cy Cx Cy Cx Cy 1 0.400 0.340 0.420 0.362 0.440 0.383 2 0.420 0.362 0.440 0.383 0.460 0.405 3 0.420 0.408 0.440 0.430 0.460 0.452 4 0.400 0.387 0.420 0.408 0.440 0.430 4 13/09/2006 V1.0 DOMINANT TM Semiconductors Innovating Illumination InGaN Warm White High Lumens : 350 mA Relative Flux Vs Forward Current Relative Flux; Normalized at 350mA 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 200 400 600 Relative Intensity Vs Forward Current Relative Intensity; Normalized at 350mA 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 200 400 600 Forward Current, mA Forward Current, mA Forward Current Vs Forward Voltage 600 500 Relative Spectral Emission 1 0.9 0.8 0.7 Forward Current, mA WarmWhite 2 2.5 3 3.5 4 4.5 400 300 200 100 0 0.6 0.5 0.4 0.3 0.2 0.1 0 300 400 500 600 700 800 Forward Voltage, V Wavelength, nm Forward Current Vs Ambient Temperature (Rja=40K/W) 400 350 Forward Current Vs Solder Point Temperature 400 350 Forward Current, mA Forward Current, mA 0 10 20 30 40 50 60 70 80 90 100 300 250 200 150 100 50 0 300 250 200 150 100 50 0 0 20 40 60 80 100 Ambient Temperature 5 Solder Point Temperature 13/09/2006 V1.0 DOMINANT TM Semiconductors Innovating Illumination InGaN Warm White High Lumens : 350 mA Maximum Permissible Pulse Current, Ta=25 1000 900 Radiation Pattern 30 o 20 o 10 o 0o 1.0 Pulse Current, mA 40 o 0.8 800 700 600 500 400 300 200 1 10 100 50 o 60 70 o 0.6 0.4 o 0.2 80 o 90 o 0 Duty (%); Tp<=0.01 sec Maximum Permissible Pulse Current, Ta=25 1000 900 Pulse Current, mA 800 700 600 500 400 300 200 1 10 100 Duty (%); Tp<=0.01 sec Maximum Permissible Pulse Current, Ta=25 1000 900 Pulse Current, mA 800 700 600 500 400 300 200 1 10 100 13/09/2006 V1.0 6 Duty (%); Tp<=0.01 sec DOMINANT TM Semiconductors Innovating Illumination TM InGaN Warm White High Lumens : 350 mA SPNovaLED * InGaN Warm White High Lumens : 350 mA Package Outlines 7 13/09/2006 V1.0 DOMINANT TM Semiconductors Innovating Illumination InGaN Warm White High Lumens : 350 mA Solder Pad Design Note: Metal core circuit board (MCPCB) is highly recommended for applications. Please consult sales and marketing for additional information. 8 13/09/2006 V1.0 DOMINANT TM Semiconductors Innovating Illumination InGaN Warm White High Lumens : 350 mA Taping and orientation * Reels come in quantity of 2000 units. * Reel diameter is 330 mm. 9 13/09/2006 V1.0 DOMINANT TM Semiconductors Innovating Illumination InGaN Warm White High Lumens : 350 mA Packaging Specification 10 13/09/2006 V1.0 DOMINANT TM Semiconductors Innovating Illumination InGaN Warm White High Lumens : 350 mA Packaging Specification Moisture sensitivity level Barcode label DOMINANT Semiconductors LOT NO : lotno ROHS Compliant PB Free S/N : xxx D/C: xxxx PART NO : partno QTY : qty GROUP : group Reel Moisture absorbent material + Moisture indicator The reel, moisture absorbent material and moisture indicator are sealed inside the moisture proof foil bag Average 1pc SPNovaLED Weight (gram) Weight (gram) 0.188 0.034 1 completed bag (2000pcs) 800 10 190 10 DOMINANT TM Semiconductors Cardboard Box For SPNovaLED Cardboard Box Size Large TM Dimensions (mm) Empty Box Weight (kg) 1.74 Reel / Box Quantity / Box (pcs) 416 x 516 x 476 20 reels MAX 40,000 MAX 11 13/09/2006 V1.0 DOMINANT TM Semiconductors Innovating Illumination InGaN Warm White High Lumens : 350 mA Recommended Sn-Pb IR-Reflow Soldering Profile Classification Reflow Profile (JEDEC J-STD-020C) 275 250 225 200 Ramp-up 3C/sec max. 235-240C 10-30s Temperature (C) 175 150 125 100 75 50 25 0 50 100 150 200 Preheat 60-120s 360s max Rampdown 6C/sec max. 183C 60-150s Recommended Pb-free Soldering Profile Classification Reflow Profile (JEDEC J-STD-020C) 300 275 250 225 217C Ramp-up 3C/sec max. 255-260C 10-30s Temperature (C) 200 175 150 125 100 75 50 25 0 50 Preheat 60-180s 480s max 100 150 200 Rampdown 6C/sec max. 60-150s Time (sec) 12 13/09/2006 V1.0 DOMINANT TM Semiconductors Innovating Illumination InGaN Warm White High Lumens : 350 mA Revision History Page Subjects Initial Release Date of Modification 13 Sep 2006 NOTE All the information contained in this document is considered to be reliable at the time of publishing. However, DOMINANT Semiconductors does not assume any liability arising out of the application or use of any product described herein. DOMINANT Semiconductors reserves the right to make changes at any time without prior notice to any products in order to improve reliability, function or design. DOMINANT Semiconductors products are not authorized for use as critical components in life support devices or systems without the express written approval from the Managing Director of DOMINANT Semiconductors. 13 13/09/2006 V1.0 DOMINANT TM Semiconductors Innovating Illumination InGaN Warm White High Lumens : 350 mA About Us DOMINANT Semiconductors is a dynamic Malaysian Corporation that is among the world's leading SMT LED Manufacturers. An excellence - driven organization, it offers a comprehensive product range for diverse industries and applications. Featuring an internationally certified quality assurance acclaim, DOMINANT's extra bright LEDs are perfectly suited for various lighting applications in the automotive, consumer and communications as well as industrial sectors. With extensive industry experience and relentless pursuit of innovation, DOMINANT's state-of-art manufacturing, research and testing capabilities have become a trusted and reliable brand across the globe. More information about DOMINANT Semiconductors can be found on the Internet at http://www.dominant-semi.com. Please contact us for more information: Head Quarter DOMINANT Semiconductors Sdn. Bhd. Lot 6, Batu Berendam, FTZ Phase III, 75350 Melaka, Malaysia Tel: (606) 283 3566 Fax: (606) 283 0566 E-mail: sales@dominant-semi.com DOMINANT China Sales Office E-mail: sales_china@dominant-semi.com DOMINANT Korea Sales Office DOMINANT Semiconductors Korea Inc. #709, Yatap Leaders Bldg., 342-1, Yatap-dong, Bundang-gu, Seongnam-si, Gyeonggi-do, 463-828 Korea Tel: 82-31-701-5203 Fax: 82-31-701-5204 E-mail: sales_korea@dominant-semi.com Semiconductors Innovating Illumination DOMINANT TM |
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