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MWI 75-12 A5
IGBT Modules Sixpack
IC25 = 90 A = 1200 V VCES VCE(sat) typ. = 2.2 V
Short Circuit SOA Capability Square RBSOA
W1 I 10 K10
A10 B10
R10 S10 F3 K3 P3
E10 F10 A1
M10 N10
V10 W10
E 72873
Preliminary data
Symbol VCES VCGR VGES VGEM IC25 IC80 ICM tSC (SCSOA) RBSOA Ptot TJ Tstg VISOL
Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 20 k Continuous Transient TC = 25C TC = 80C TC = 80C, tP = 1 ms VGE = 15 V, VCE = VCES, TJ = 125C RG = 22 , non repetitive VGE = 15 V, TJ = 125C, RG = 22 Clamped inductive load, L = 100 H TC = 25C
Maximum Ratings 1200 1200 20 30 90 60 120 10 ICM = 100 VCEK < VCES 370 150 -40 ... +150 V V V V A A A s A W C C V~ V~ Nm lb.in. mm mm m/s2 g oz.
Features NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes solderable pins for PCB mounting package with DCB ceramic base plate isolation voltage 4800 V UL registered E72873
q q q q q q q q q q q q q
Advantages
q q q
space and weight savings reduced protection circuits package designed for wave soldering
50/60 Hz, RMS t = 1 min IISOL 1 mA t=1s Insulating material: Al2O3 Mounting torque (M5) Creepage distance on surface Strike distance through air Max. allowable acceleration Typical
4000 4800 2.0 - 2.5 18 - 22 9 9 50 80 2.8
Typical Applications
q q q
Md dS dA a Weight
AC motor control AC servo and robot drives power supplies
Data according to a single IGBT/FRED unless otherwise stated.
(c)1998 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS reserves the right to change limits, test conditions and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670
842
MWI 75-12 A5
Symbol Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1200 4.5 TJ = 25C TJ = 125C 6 6.5 V V
Dimensions in mm (1 mm = 0.0394")
V(BR)CES VGE(th) ICES IGES VCE(sat) Cies Coes Cres td(on) tr td(off) tf Eon Eoff RthJC RthJS
VGE = 0 V IC = 2 mA, VCE = VGE VCE = VCES VCE = 0 V, VGE = 20 V IC = 50 A, VGE = 15 V VCE = 25 V, VGE = 0 V, f = 1 MHz
4 mA mA 200 nA V pF pF pF ns ns ns ns mJ mJ 0.33 K/W K/W
2.2 3300 500 220 100
2.7
Inductive load, TJ = 125C IC = 50 A, VGE = 15 V VCE = 600 V, RG = 22
70 500 70 7.6 5.6
with heatsink compound
0.66
Reverse Diode (FRED)
Characteristic Values min. typ. 2.3 1.8 max. 2.5 2.1 100 60 40 200 1.32 V V A A A ns 0.66 K/W K/W
Equivalent Circuits for Simulation
Conduction
VF IF IRM trr RthJC RthJS
IF = 50 A, VGE = 0 V IF = 50 A, VGE = 0 V, TJ = 125C TC = 25C TC = 80C IF = 50 A, VGE = 0 V, -diF/dt = 400 A/s TJ = 125C, VR = 600 V with heatsink compound
IGBT (typ. at VGE = 15 V; TJ = 125C) V0 = 1.5 V; R0 = 20.7 m Free Wheeling Diode (typ. at TJ = 125C) V0 = 1.3 V; R0 = 11.3 m Thermal Response
IGBT (typ.) Cth1 = 0.13 J/K; Rth1 = 0.323 K/W Cth2 = 0.32 J/K; Rth2 = 0.008 K/W Free Wheeling Diode (typ.) Cth1 = 0.10 J/K; Rth1 = 0.645 K/W Cth2 = 0.18 J/K; Rth2 = 0.013 K/W (c)1998 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXYS reserves the right to change limits, test conditions and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670
842
MWI 75-12 A5
120 TJ = 25C A 100
IC
VGE=17V 15V 13V 11V
120 A TJ = 125C 100 IC 80
VGE=17V 15V 13V 11V
80 60 40
9V
60 40 20 0 0.0
9V
20 0 0.0
0.5
1.0
1.5
2.0
2.5
VCE
3.0 V
0.5
1.0
1.5
2.0
2.5 3.0 VCE
3.5 V
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
120 VCE = 20V A TJ = 25C 100
IC
180
TJ = 125C
A 150 IF 120 90 60 30 0
TJ = 25C
80 60 40 20 0 5 6 7 8 9 10
VGE
11 V
0
1
2
VF
3
V
4
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of free wheeling diode
20 V
VGE 15
120
VCE = 600V IC = 50A
300
ns
trr
A IRM
trr
80
200
10 40 5
TJ = 125C VR = 600V IF = 50A
IRM
100
75-12
0 0 50 100 150 200
QG
0 250 nC 0 200 400 600 800 A/s -di/dt
0
1000
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of free wheeling diode
(c)1998 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS reserves the right to change limits, test conditions and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670
842
MWI 75-12 A5
24
mJ Eon
120 ns 90 td(on) t 60 tr
VCE = 600V VGE = 15V RG = 22 TJ = 125C
12 mJ 10
Eoff
600 Eoff ns 500 td(off) 400 t 300 200 100 0 0 20 40 60 80 IC 100 A
18
8 6 4
VCE = 600V VGE = 15V RG = 22 TJ = 125C
12
6
Eon
30
2
0
tf
0 0 20 40 60
IC
0
80
100 A
Fig. 7 Typ. turn on energy and switching times versus collector current
20
mJ Eon 15 240 td(on) Eon ns 180 t Eoff
Fig. 8 Typ. turn off energy and switching times versus collector current
10
mJ 1500 ns 1200 t 900 600 300 tf 0
VCE = 600V VGE = 15V IC = 50A TJ = 125C
8 6
VCE = 600V VGE = 15V IC = 50A TJ = 125C
td(off) Eoff
10
tr
120
4
60
5
2 0 0
0
0 10 20 30 40 50 60 70 80 90 100 RG
0
10 20 30 40 50 60 70 80 90 100 RG
Fig. 9 Typ. turn on energy and switching times versus gate resistor
120 A 100
ICM 1 K/W 0.1 ZthJC
RG = 22 TJ = 125C VCEK < VCES
Fig.10 Typ. turn off energy and switching times versus gate resistor
80 60 40 20 0 0 200 400 600 800 1000 1200 V
VCE
diode
0.01 0.001 0.0001
IGBT
single pulse
75-12
0.00001 0.00001 0.0001
0.001
0.01 t
0.1
s
1
Fig. 11 Reverse biased safe operating area RBSOA
Fig. 12 Typ. transient thermal impedance
(c)1998 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS reserves the right to change limits, test conditions and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670
842

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