View MWI75-06A7T_1286516.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MWI 75-06 A7 MWI 75-06 A7 T
IGBT Modules Sixpack
Short Circuit SOA Capability Square RBSOA
13
IC25 = 90 A = 600 V VCES VCE(sat) typ. = 2.1 V
Preliminary Data
Type MWI 75-06 A7 MWI 75-06 A7T NTC - Option without NTC with NTC
1 2
5 6
9 10 16 15 14
T
NTC
3 4 17
7 8
11 12
T
IGBTs Symbol VCES VGES IC25 IC80 RBSOA tSC (SCSOA) Ptot TC = 25C TC = 80C VGE = 15 V; RG = 18 W; TVJ = 125C Clamped inductive load; L = 100 H VCE = VCES; VGE = 15 V; RG = 18 W; TVJ = 125C non-repetitive TC = 25C Conditions TVJ = 25C to 150C Maximum Ratings 600 20 90 60 ICM = 120 VCEK VCES 10 280 V V A A A s W
Features NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes solderable pins for PCB mounting package with copper base plate
q q q q q q q q q q q
Advantages
q q q
Symbol
Conditions
Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 2.1 2.5 4.5 0.9 200 50 50 270 40 3.5 2.5 3200 190 2.6 6.5 1.3 V V V mA mA nA ns ns ns ns mJ mJ pF nC 0.44 K/W
space savings reduced protection circuits package designed for wave soldering
Typical Applications
q q
VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC
IC = 75 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 1.5 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C VCE = 0 V; VGE = 20 V
q
AC motor control AC servo and robot drives power supplies
Inductive load, TVJ = 125C VCE = 300 V; IC = 75 A VGE = 15 V; RG = 18 W
VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 300V; VGE = 15 V; IC = 75 A (per IGBT)
IXYS reserves the right to change limits, test conditions and dimensions.
(c) 2000 IXYS All rights reserved
1-4
023
MWI 75-06 A7 MWI 75-06 A7 T
Diodes Symbol IF25 IF80 Conditions TC = 25C TC = 80C Maximum Ratings 140 85 A A Equivalent Circuits for Simulation
Conduction
Symbol VF IRM trr RthJC
Conditions IF = 50 A; VGE = 0 V; TVJ = 25C TVJ = 125C IF = 60 A; diF/dt = -500 A/s; TVJ = 125C VR = 300 V; VGE = 0 V (per diode)
Characteristic Values min. typ. max. 1.8 1.3 28 100 2.1 1.5 V V A ns 0.61 K/W
IGBT (typ. at VGE = 15 V; TJ = 125C) V0 = 0.95 V; R0 = 20 m Free Wheeling Diode (typ. at TJ = 125C) V0 = 1.014 V; R0 = 4 m Thermal Response
Temperature Sensor NTC (MWI ... A7T version only) Symbol R25 B25/50 Module Symbol TVJ Tstg VISOL Md Symbol Rpin-chip dS dA RthCH Weight Creepage distance on surface Strike distance in air with heatsink compound 6 6 0.02 180 IISOL 1 mA; 50/60 Hz Mounting torque (M5) Conditions Conditions Maximum Ratings -40...+150 -40...+125 2500 2.7 - 3.3 C C V~ Nm Conditions T = 25C Characteristic Values min. typ. max. 4.75 5.0 3375 5.25 k K
IGBT (typ.) Cth1 = 0.248 J/K; Rth1 = 0.343 K/W Cth2 = 1.849 J/K; Rth2 = 0.097 K/W Free Wheeling Diode (typ.) Cth1 = 0.23 J/K; Rth1 = 0.483 K/W Cth2 = 1.3 J/K; Rth2 = 0.127 K/W
Dimensions in mm (1 mm = 0.0394")
Characteristic Values min. typ. max. 5 m mm mm K/W g
Higher magnification see outlines.pdf
(c) 2000 IXYS All rights reserved
2-4
MWI 75-06 A7 MWI 75-06 A7 T
200
A 160
VGE= 17V 15V 13V
200 A 160 120
11V VGE= 17V 15V 13V 11V
IC
IC
120 80 40 0 0 1 2 3 4 VCE 5
V
9V TVJ = 25C
80 40 0
9V TVJ = 125C
6
0
1
2
3
4 VCE
5V
6
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
200
A 160 IC
160 A 120 IF 80
TVJ = 125C TVJ = 25C
120 80
TVJ = 125C TVJ = 25C
40
VCE = 20V
40
0 4 6 8 10 VGE 12
V
14
0 0.0
0.5
1.0
1.5 VF
2.0 V
2.5
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of free wheeling diode
60 50 A
IRM
trr
20
V
150
ns trr
15
VGE
40 30 20
TVJ = 125C VR = 300V IF = 60A
MWI7506A7
100
10
50
5
VCE = 300V IC = 75A
10
IRM
0 0 40 80 120 160
QG
0 200 nC 240 0 200 400
0
600 800 A/ms -di/dt
1000
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of free wheeling diode
(c) 2000 IXYS All rights reserved
3-4
MWI 75-06 A7 MWI 75-06 A7 T
10.0
mJ Eon 100 ns td(on) tr
VCE = 300V VGE = 15V
5
mJ
500 Eoff ns 400 t 300 200 100 tf 0 40 80 120 A IC 0 160
7.5
75 t 50
4
Eoff
3 2
25
VCE = 300V VGE = 15V
5.0
td(off)
2.5
Eon
RG = 18W TVJ = 125C
1 0
RG = 18W TVJ = 125C
0.0
0
40
80
IC
120
A
0 160
Fig. 7 Typ. turn on energy and switching times versus collector current
10
mJ Eon 100 td(on) tr ns 80 t 60
VCE = 300V VGE = 15V IC = 75A TVJ = 125C
Fig. 8 Typ. turn off energy and switching times versus collector current
5
mJ Eoff 500 td(off) Eoff ns 400 t 300 200 100 0 60
8 6 4 2 0 0 10 20 30
Eon
4 3 2 1 0 0 10 20 30 40 RG
40 20 0 60
VCE = 300V VGE = 15V IC = 75A TVJ = 125C
tf
40 RG
50
W
50
W
Fig. 9 Typ. turn on energy and switching times versus gate resistor
160
A ICM 1 K/W 0.1 ZthJC 0.01
Fig.10 Typ. turn off energy and switching times versus gate resistor
diode IGBT
120
80
40
RG = 18 W TVJ = 125C
0.001
single pulse
0 0 100 200 300 400 500 600 VCE 700 V
0.0001 0.00001 0.0001 0.001
MWI7506A7
0.01
0.1 t
1
s 10
Fig. 11 Reverse biased safe operating area RBSOA
Fig. 12 Typ. transient thermal impedance
(c) 2000 IXYS All rights reserved
4-4

▲Up To Search▲

Price & Availability of MWI75-06A7T

	To Download MWI75-06A7T Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .