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 MUN5211DW Series Surface Mount Dual Bias Resistor Transistor NPN Silicon
P b Lead(Pb)-Free
4 5 6 3 2 1
65
4
1
2
3
Maximum Ratings
Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current Symbol VCEO VCBO IC
NPN+NPN Value 50 50 100
SOT-363(SC-88)
Unit Vdc Vdc mAdc
Thermal Characteristics
Characteristics (1) Total Device Dissipation TA=25 C
Symbol PD
Max
187 (2) 256 (3) 1.5 (2) 2.0 (3)
Unit mW mW/ C C/W
C
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature
1.One Junction Heated 2.FR-4 @ Minimum Pad 3.FR-4 @ 1.0 I 1.0 Inch Pad
R JA
TJ,Tstg
670(2) 490(3)
-55 to +150
Device Marking and Resistor Values
Device
MUN5211DW MUN5212DW MUN5213DW MUN5214DW MUN5215DW MUN5216DW MUN5230DW
I
Marking
7A 7B 7C 7D 7E 7F 7G
R1(K)
10 22 47 10 10 4.7 1.0
R2(K)
10 22 47 47 88
Device
MUN5231DW MUN5232DW MUN5233DW MUN5234DW MUN5235DW MUN5236DW MUN5237DW
Marking
7H 7J 7K 7L 7M 7N 7P
R1(K)
2.2 4.7 4.7 22 2.2 100 47
R2(K)
2.2 4.7 47 47 47 100 22
1.0
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Rev.A 29-Dec-05
MUN5211DW Series
Electrical Characteristics
(TA=25 C Unless Otherwise noted) Symbol Min Max Unit
Characteristics
Off C har acter istics
Collector-Base Cutoff Current (VCB=50Vdc, I E =0) Collector-Emitter Cutoff Current(VCE=50Vdc, IB =0) Emitter-Base Cutoff Current (VEB =6.0Vdc, IC=0) MUN5211DW MUN5212DW MUN5213DW MUN5214DW MUN5215DW MUN5216DW MUN5230DW MUN5231DW MUN5232DW MUN5233DW MUN5234DW MUN5235DW MUN5236DW MUN5237DW Collector-Base Breakdown Voltage (I C =10uAdc, IE =0) Collector-Emitter Breakdown Voltage(4) (I C=2.0mA, I B=0)
4. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%
I CBO I CEO I EBO
-
100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 0.05 0.13 -
nAdc nAdc mAdc
V(BR)CBO V(BR)CEO
50 50
Vdc Vdc
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Rev.A 29-Dec-05
MUN5211DW Series
Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min Typ Max Unit
On Characteristics (4)
DC Current Gain (IC= 5.0 mAdc, VCE=10Vdc)
MUN5211DW MUN5212DW MUN5213DW MUN5214DW MUN5215DW MUN5216DW MUN5230DW MUN5231DW MUN5232DW MUN5233DW MUN5234DW MUN5235DW MUN5236DW MUN5237DW
HFE
35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80
-
60 100 140 140 350 350 5.0 15 30 200 150 140 150 140
-
-
Collector-Emitter Saturation Voltage (IC= 10 mAdc, IB= 0.3mAdc) (IC= 10 mAdc, IB= 5.0mAdc) MUN5230DW/MUN5231DW (IC= 10 mAdc, IB= 1.0mAdc) MUN5215DW/MUN5216DW
VCE(sat)
0.25
Vdc
MUN5232DW/MUN5233DW/MUN5234DW
Output Voltage (on) (VCC = 5.0 V, VB= 2.5V, R L =1.0 k )
(VCC = 5.0 V, VB= 3.5V, RL =1.0 k ) (VCC = 5.0 V, VB= 5.5V, RL =1.0 k ) (VCC = 5.0 V, VB= 4.0V, R L =1.0 k ) Output Voltage (off ) (VCC = 5.0 V, VB= 0.5V, R L =1.0 k ) (VCC = 5.0 V, VB= 0.05V, R L =1.0 k ) (VCC = 5.0 V, VB= 0.25V, R L =1.0 k )
MUN5211DW MUN5212DW MUN5214DW MUN5215DW MUN5216DW MUN5230DW MUN5231DW MUN5232DW MUN5233DW MUN5234DW MUN5235DW MUN5213DW MUN5236DW MUN5237DW
VOL
-
-
0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2
-
Vdc
VOL
4.9
Vdc
MUN5230DW MUN5215DW MUN5216DW MUN5233DW
4. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%
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Rev.A 29-Dec-05
MUN5211DW Series
Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min Typ Max Unit
On Characteristics (5)
Input Resistor
MUN5211DW MUN5212DW MUN5213DW MUN5214DW MUN5215DW MUN5216DW MUN5230DW MUN5231DW MUN5232DW MUN5233DW MUN5234DW MUN5235DW MUN5236DW MUN5237DW
R1
7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 32.9 0.8 0.17 0.8 0.055 0.38 0.038 1.7
10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 1.0 0.21 1.0 0.1 0.47 0.047 2.1
13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 1.2 0.25 1.2 0.185 0.56 0.056 2.6
k
Resistor Ratio
MUN5211DW/MUN5212DW MUN5213DW/MUN5236DW MUN5214DW MUN5215DW/MUN5216DW MUN5230DW/MUN5231DW/MUN5232DW MUN5233DW MUN5234DW MUN5235DW MUN5237DW
R1/R2
5. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%
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Rev.A 29-Dec-05
MUN5211DW Series
300 VCE(sat) , COLLECTOR VOLTAGE (VOLTS) P D , P OWE R DIS S IPAT ION (mW) 250 200 150 100 50 0 - 50 R J A = 833 C /W 0 50 100 T A , AMB IE NT T E MP E R AT UR E ( C ) 150 1 IC/IB = 10 TA = -25 C 25 C 0.1 75 C
0.01
0.001
0
FIG 1. Derating Curve
1000 VCE = 10 V Cob , CAPACITANCE (pF) TA = 75 C 25 C -25 C 100 3 4
20 40 IC , COLLECTOR CURRENT (m A)
50
FIG 2. VCE(sat) versus IC
hFE , DC CURRENT GAIN (NORMALIZED)
f = 1 MHz IE = 0 V TA = 25 C
2
1
10
1
10 IC , COLLECTOR CURRENT (m A)
100
0
0
10 20 30 40 VR , REVERSE BIAS VOL TAGE (VOLTS)
50
FIG 3. DC Current Gain
100 75 C IC, COLLECTOR CURRENT (mA) 10 25 C TA = -25 C 10 VO = 0.2 V V in, INPUT VOLTAGE (VOLTS)
FIG 4. Output Capacitance
TA = -25 C 25 C 75 C
1
1
0.1
0.01 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10
0.001
0.1
0
10
40 20 30 IC, COLLECTOR CURRENT (m A)
50
FIG 5. Output Current versus Input Voltage
FIG 6. Input Voltage versus Output Current
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Rev.A 29-Dec-05
MUN5211DW Series SOT-363 Package Outline Dimensions
A
Unit:mm
SOT-363
4
6
5
BC
1 2 3
D
E
H K J L M
Dim A B C D E H J K L M
Min Max 0.10 0.30 1.15 1.35 2.00 2.20 0.65 REF 0.30 0.40 1.80 2.20 0.10 0.80 1.10 0.25 0.40 0.10 0.25
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Rev.A 29-Dec-05


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