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| 2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSASC100W100H MSASC100W100HR Features * * * * * * * * Tungsten schottky barrier Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability Epitaxial structure minimizes forward voltage drop Hermetically sealed, low profile ceramic surface mount power package Low package inductance Very low thermal resistance Available as standard polarity (strap-to-anode, MSASC100W100H) and reverse polarity (strap-to-cathode: MSASC100W100HR) 100 Volts 100 Amps LOW LEAKAGE SCHOTTKY DIODE Maximum Ratings @ 25C (unless otherwise specified) DESCRIPTION Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current, Tc 135C derating, forward current, Tc 135C Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave Peak Repetitive Reverse Surge Current, tp= 1s, f= 1kHz Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction to Case: MSASC100W100H SYMBOL VRRM VRWM VR IF(ave) dIF/dT IFSM IRRM Tj Tstg JC MAX. 100 100 100 100 2.5 500 2 -65 to +175 -65 to +175 0.35 0.5 UNIT Volts Volts Volts Amps Amps/C Amps Amp C C C/W Mechanical Outline Datasheet# MSC0306A MSASC100W100H MSASC100W100HR Electrical Parameters DESCRIPTION Reverse (Leakage) Current Forward Voltage pulse test, pw= 300 s d/c 2% SYMBOL IR25 IR125 VF1 VF2 VF3 VF4 VF5 VF6 VF7 Cj1 Cj2 BVR CONDITIONS VR= 100 Vdc, Tc= 25C VR= 100 Vdc, Tc= 125C IF= 10A, Tc= 25C IF= 20A, Tc= 25C IF= 40A, Tc= 25C IF= 80A, Tc= 25C IF= 100A, Tc= 25C IF= 20A, Tc= -55C IF= 20A, Tc= 125C VR= 10 Vdc VR= 5 Vdc IR= 1 mA, Tc= 25C IR= 1 mA, Tc= -55C MIN TYP. .05 10 570 670 760 890 940 710 540 1500 tbd 120 110 MAX 1 100 620 720 820 950 800 2000 UNIT mA mA mV mV mV mV mV mV mV pF pF V V Junction Capacitance Breakdown Voltage 100 Datasheet# MSC0306A |
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