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| NEW PRODUCT NEW PRODUCT NEW PRODUCT MPSA06 Small Signal Transistors (NPN) TO-92 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) 0.142 (3.6) FEATURES NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type, the PNP transistor MPSA56 is recommended. On special request, this transistor is also manufactured in the pin configuration TO-18. This transistor is also available in the SOT-23 case with the type designation MMBTA06 C max. 0.022 (0.55) 0.098 (2.5) E MECHANICAL DATA Case: TO-92 Plastic Package Weight: approx. 0.18g B Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25C ambient temperature unless otherwise specified SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation at TA = 25 C at TC = 25 C Thermal Resistance Junction to Ambient Air Junction Temperature Storage Temperature Range 1)Valid VCBO VCEO VEBO IC Ptot 80 80 4.0 500 625 1.5 V V V mA mW W K/W C C RJA Tj TS 200(1) 150 -65 to +150 provided that leads are kept at ambient temperature 10/27/98 MPSA06 ELECTRICAL CHARACTERISTICS Ratings at 25C ambient temperature unless otherwise specified SYMBOL MIN. .MAX. UNIT Collector-Emitter Breakdown Voltage at IC = 1 mA, IB = 0 Emitter-Base Breakdown Voltage at IE = 100 A, IC = 0 Collector-Emitter Cutoff Current VCE = 60 V, IB = 0 Collector-Base Cutoff Current VCB = 80 V, IE = 0 Collector Saturation Voltage at IC = 100 mA, IB = 10 mA Base-Emitter On Voltage at IC = 10 mA, IB = 1 mA DC Current Gain at VCE = 1 V, IC = 10 mA at VCE = 1 V, IC = 100 mA Gain-Bandwidth Product at VCE = 2.0 V, IC = 10 mA, f = 100 MHz 1) V(BR)CEO V(BR)EBO ICES ICBO VCEsat 80 4.0 - - - - - 100 100 0.25 V V nA nA V VBE(on) hFE hFE fT - 100 100 100 1.2 - - - V - - MHz Valid provided that leads are kept at ambient temperature |
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