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| Freescale Semiconductor Technical Data Document Number: MHL9236N Rev. 8, 8/2006 Cellular Band RF Linear LDMOS Amplifier Designed for ultra- linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for the most demanding analog or digital modulation systems, such as TDMA, CDMA or QPSK. * Third Order Intercept: 47 dBm Typ * Power Gain: 30.5 dB Typ (@ f = 880 MHz) * Input and Output VSWR v 1.5:1 Features * Excellent Phase Linearity and Group Delay Characteristics * Ideal for Feedforward Base Station Applications * For Use in TDMA, CDMA, QPSK or Analog Systems * N Suffix Indicates Lead - Free Terminations MHL9236N 800 - 960 MHz 2.5 W, 30.5 dB RF LINEAR LDMOS AMPLIFIER CASE 301AP - 02, STYLE 1 Table 1. Absolute Maximum Ratings (TC = 25C unless otherwise noted) Rating DC Supply Voltage RF Input Power Storage Temperature Range Operating Case Temperature Range Symbol VDD Pin Tstg TC Value 30 +10 - 40 to +100 - 20 to +100 Unit Vdc dBm C C Table 2. Electrical Characteristics (VDD = 26 Vdc, TC = 25C; 50 System) Characteristic Supply Current Power Gain Gain Flatness Power Output @ 1 dB Compression (f = 880 MHz) (f = 800 - 960 MHz) (f = 880 MHz) Symbol IDD Gp GF P1dB ITO NF Min -- 29 -- 33 46 -- Typ 550 30.5 0.1 34 47 3.5 Max 620 32 0.3 -- -- 4.5 Unit mA dB dB dBm dBm dB Third Order Intercept (f1 = 879 MHz, f2 = 884 MHz) Noise Figure (f = 800 - 960 MHz) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. (c) Freescale Semiconductor, Inc., 2006. All rights reserved. MHL9236N 1 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 40 POWER GAIN/RETURN LOSS (dB) Gp 20 P1dB, ITO (dBm) 45 50 ITO 0 ORL -20 IRL 40 35 VDD = 26 Vdc TC = 25C P1dB 30 400 VDD = 26 Vdc TC = 25C 1000 1200 -40 400 800 1200 f, FREQUENCY (MHz) 1600 2000 600 800 f, FREQUENCY (MHz) Figure 1. Power Gain, Input Return Loss, Output Return Loss versus Frequency Figure 2. P1dB, ITO versus Frequency 33 32 G p , POWER GAIN (dB) 31 Gp 30 29 IDD 28 27 -40 565 560 120 575 570 VDD = 26 Vdc f = 880 MHz 580 I DD , (mA) 50 48 VDD = 26 Vdc f = 880 MHz 35 34.5 P1dB (dBm) PHASE LINEARITY( ) ITO 46 ITO (dBm) 44 P1dB 42 40 -40 34 33.5 -20 0 40 60 20 TEMPERATURE (C) 80 100 -20 0 20 40 60 TEMPERATURE (C) 80 100 33 120 Figure 3. Power Gain, IDD versus Temperature Figure 4. ITO, P1dB versus Temperature -420 -425 2.2 0.30 0.50 G F , GAIN FLATNESS (dB) GROUP DELAY (nS) -430 PHASE ( ) PHASE -435 -440 -445 -450 -40 GROUP DELAY VDD = 26 Vdc f = 880 MHz -20 0 20 40 60 TEMPERATURE (C) 80 100 2.1 0.20 PHASE LINEARITY 0.40 2.0 0.10 GF VDD = 26 Vdc f = 800-960 MHz 80 100 0.30 1.9 120 0 -40 -20 0 20 40 60 TEMPERATURE (C) 0.20 120 Figure 5. Phase(1), Group Delay(1) versus Temperature 1. In Production Test Fixture Figure 6. Gain Flatness, Phase Linearity versus Temperature MHL9236N 2 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 31.7 31.5 G p , POWER GAIN (dB) 31.3 31.1 30.9 Gp f = 880 MHz TC = 25C 700 650 IDD 600 ITO (dBm) I DD (mA) 550 500 450 400 30 42 40 22 P1dB (dBm) G F , GAIN FLATNESS (dB) 46 44 P1dB f = 880 MHz TC = 25C 24 26 VOLTAGE (VOLTS) 28 30 33 32 35 34 50 48 36 ITO 30.7 30.5 22 24 26 VOLTAGE (VOLTS) 28 Figure 7. Power Gain, IDD versus Voltage Figure 8. ITO, P1dB versus Voltage -433 2.04 0.50 0.45 PHASE LINEARITY( ) GROUP DELAY (nS) 0.11 0.10 GF 0.09 0.08 0.07 f = 800-960 MHz TC = 25C 24 26 VOLTAGE (VOLTS) 28 30 0.06 0.05 -433.5 PHASE ( ) 2.03 0.40 0.35 0.30 0.25 -434 GROUP DELAY PHASE 2.02 PHASE LINEARITY -434.5 f = 880 MHz TC = 25C -435 22 24 26 VOLTAGE (VOLTS) 28 2.01 2.00 30 0.20 22 Figure 9. Phase(1), Group Delay(1) versus Voltage 1. In Production Test Fixture Figure 10. Phase Linearity, Gain Flatness versus Voltage MHL9236N RF Device Data Freescale Semiconductor 3 PACKAGE DIMENSIONS A G 0.020 (0.51) M A S 2X Q 0.008 (0.20) M TS M A M TA M B R J K W 4X 1 2 3 4 S NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION "F" TO CENTER OF LEADS. DIM A B C D E F G H J K L N P Q R S W STYLE 1: PIN 1. 2. 3. 4. CASE: INCHES MIN MAX 1.760 1.780 1.370 1.390 0.245 0.265 0.017 0.023 0.080 0.100 0.086 BSC 1.650 BSC 1.290 BSC 0.266 0.280 0.125 0.165 0.990 BSC 0.390 BSC 0.008 0.013 0.118 0.132 0.535 0.555 0.445 0.465 0.090 BSC MILLIMETERS MIN MAX 44.70 45.21 34.80 35.31 6.22 6.73 0.43 0.58 2.03 2.54 2.18 BSC 41.91 BSC 32.77 BSC 6.76 7.11 3.18 4.19 25.15 BSC 9.91 BSC 0.20 0.33 3.00 3.35 13.59 14.10 11.30 11.81 2.29 BSC D M N L H F E C T SEATING PLANE M 0.020 (0.51) M TB 4X P 0.020 (0.51) T RF INPUT VDD1 VDD2 RF OUTPUT GROUND CASE 301AP - 02 ISSUE E MHL9236N 4 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2006. All rights reserved. MHL9236N Document Number: RF Device Data MHL9236N Rev. 8, 8/2006 Freescale Semiconductor 5 |
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