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| Amplifier, Distributed Power 4.0--18.0 GHz Features 0.5 Watt Saturated Output Power Level Variable Drain Voltage (5-10V) Operation GaAs MSAGTM Process Proven Manufacturability and Reliability No Airbridges Polyimide Scratch Protection No Hydrogen Poisoning Susceptibility MAAPGM0052-DIE 903210 -- Preliminary Information Description The MAAPGM0052-DIE is a 2-stage distributed power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM's repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAGTM) Process, each device is 100% RF tested on wafer to ensure performance compliance. M/A-COM's MSAGTM process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Primary Applications Electrical Characteristics: TB = 40C1, Z0 = 50, VDD = 8V, IDQ 500 mA2, Pin = 17 dBm, Rg 100 Parameter Bandwidth Output Power 1dB Compression Point Small Signal Gain Noise Figure Input VSWR Output VSWR Gate Supply Current Drain Supply Current 1. 2. 1 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. Symbol f POUT P1dB G NF VSWR VSWR IGG IDD Typical 4.0-18.0 26.0 25 13 6.0 1.4:1 1.5:1 4 600 Units GHz dBm dBm dB dB mA mA TB = MMIC Base Temperature Adjust VGG between -2.4 and -1.0V to achieve IDQ indicated. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Distributed Power 4.0--18.0 GHz Maximum Operating Conditions 3 Parameter Input Power Drain Supply Voltage Gate Supply Voltage Quiescent Drain Current (No RF, 40% Idss) Quiescent DC Power Dissipated (No RF) Junction Temperature Storage Temperature Die Attach Temperature Symbol PIN VDD VGG IDQ PDISS TJ TSTG Absolute Maximum 22.0 +12.0 -3.0 630 4.8 180 -55 to +150 310 MAAPGM0052-DIE 903210 -- Preliminary Information Units dBm V V mA W C C C 3. Operation outside of these ranges may reduce product reliability. Operation at other than the typical values may result in performance outside the guaranteed limits. Recommended Operating Conditions Characteristic Drain Supply Voltage Gate Supply Voltage Input Power Junction Temperature Thermal Resistance MMIC Base Temperature Symbol VDD VGG PIN TJ JC TB 18.6 Note 4 Min 4.0 -2.4 Typ 8.0 -1.8 17.0 Max 10.0 -1.0 20.0 150 Unit V V dBm C C/W C 4. Maximum MMIC Base Temperature = 150C --JC* VDD * IDQ Operating Instructions This device is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply VGG = -2 V, VDD= 0 V. 2. Ramp VDD to desired voltage, typically 8 V. 3. Adjust VGG to set IDQ. 4. Set RF input. 5. Power down sequence in reverse. Turn VGG off last. 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Distributed Power 4.0--18.0 GHz 50 45 40 5V 8V 10V MAAPGM0052-DIE 903210 -- Preliminary Information 6 Gain Input VSWR Output VSWR 5 20 15 Output Power (dBm) 35 30 25 20 15 10 5 0 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 4 10 3 5 2 0 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 1 Frequency (GHz) Figure 1. Output Power vs. Frequency and Drain Voltage at Pin=15dBm. Frequency (GHz) Figure 2. Small Signal Gain and VSWR at VD=5V. 50 45 40 35 30 25 20 15 10 5 0 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 5V 8V 10V 50 45 40 35 30 25 20 15 10 5 0 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 5V 8V 10V Frequency (GHz) Figure 3. Saturated Output Power vs. Frequency and Drain Voltage. Frequency (GHz) Figure 4. 1dB Compression Point vs. Frequency and Drain Voltage. 3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Distributed Power 4.0--18.0 GHz 50 45 40 35 30 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 1 2 3 4 5 6 7 8 9 10 11 12 MAAPGM0052-DIE 903210 -- Preliminary Information 6GHz 10GHz 15GHz 18GHz 6GHz 10GHz 15GHz 18GHz 13 14 15 16 17 18 19 20 Input Power (dBm) Figure 5. Output Power vs. Input Power and Frequency at VD=8V. Input Power (dBm) Figure 6. RF Drain Current vs. Input Power and Frequency at VD=8V. 20 18 16 14 5V Gain 5V NF 8V Gain 8V NF 10V Gain 10V NF 20 18 16 14 12 10 8 6 4 2 0 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Gain (dB) 12 10 8 6 4 2 0 Frequency (GHz) Figure 7. Gain and Noise Figure vs. Frequency and Drain Voltage at 25% IDSS. 4 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. Noise Figure (dB) * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Distributed Power 4.0--18.0 GHz Mechanical Information Chip Size: 3.000 x 3.000 x 0.075 mm 0.137mm MAAPGM0052-DIE 903210 -- Preliminary Information (118 x 118 x 3 mils) 3.000mm 3.000mmm 2.838mm GN D:G VD GND:G GND:G OUT GND:G 2.268mm GND:G GND:G .0467mm IN VG_B GND:G GND :G GND:G 0 0 1.744mm 2.843mm Figure 8. Die Layout Chip edge to bond pad dimensions are shown to the center of the bond pad. Bond Pad Dimensions Pad RF In and Out DC Drain Supply Voltage VDD DC Gate Supply Voltage VG_B Size (m) 100 x 150 150 x 150 150 x 150 Size (mils) 4x6 6x6 6x6 5 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. G DN G : G ND:G 5 Amplifier, Distributed Power 4.0--18.0 GHz Assembly and Bonding Diagram MAAPGM0052-DIE 903210 -- Preliminary Information VDD 0.1 F 100 pF VD G ND:G GND:G RFOUT GND:G OUT GND:G G ND:G RFIN GND:G IN VG_B GND:G G ND:G GND:G 100 pF 0.1 F Figure 9. Recommended bonding diagram for pedestal mount. Support circuitry typical of MMIC characterization fixture for CW testing. Assembly Instructions: Die attach: Use AuSn (80/20) 1 mil. preform solder. Limit time @ 300 C to less than 5 minutes. Wirebonding: Bond @ 160 C using standard ball or thermal compression wedge bond techniques. For DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of shortest length, although ball bonds are also acceptable. Biasing Note: Must apply negative bias to VGG before applying positive bias to VDD to prevent damage to amplifier. 6 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. G DNG : G ND:G RG = 100 VGG |
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