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| 3.6 V, 450 mW DECT RF Power Amplifier IC V 1.0 MA02203AD Features Ideal for DECT Applications +26.5 dBm Output Power 24.5 dB Power Gain Single Positive Supply Class A Bias No External RF Matching Required Functional Schematic N/C +VDD1 GND GND RF IN GND GND N/C +VDD2 GND GND RFOUT GND GND N/C 16 pin narrow body SOIC Description The MA02203AD is a two stage power amplifier designed for DECT applications to have an output power of +26.5 dBm with an input power of 2 dBm. This power amplifier operates at +3.6 volts with 35% typical power added efficiency. The MA02203AD is mounted in a narrow body 16-pin SOIC plastic package. The MA02203AD is fabricated using M/A-COM's self-aligned MSAG (R)-Lite MESFET process for a low single supply voltage, high power efficiency, and excellent reliability. This part is not recommended for new designs. M/ACOM's MA02206GJ has superior RF performance with less DC power consumption in a smaller package. Pricing on the MA02206GJ is also less than the MA02203AD. N/C Pin Configuration Pin 1 2 3 4 5 6 7 8 9 10 11 12 Function N/C VDD1 GND GND RFIN GND GND N/C N/C GND GND RFOUT GND GND VDD2 N/C Description Not Connected First Stage Supply Voltage Ground Ground RF Input Ground Ground Not Connected Not Connected Ground Ground RF Output Ground Ground Second Stage Supply Voltage Not Connected Ordering Information Part Number MA02203AD-R7 MA02203AD-R13 Description 7 inch, 1000 piece reel 13 inch, 3000 piece reel 13 14 15 16 Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 1 Part Description DECT RF Power Amplifier IC 3.6 V, 450 mW Electrical Specifications: T S = 40 C , Z0 = 50 1 2,3 MA02203AD V 1.0 Parameter Frequency Output Power Pout Frequency Dependency Power Gain Current Consumption Input VSWR, PA On Input VSWR, PA Off Isolation, PA Off 2nd Harmonics 3 Harmonics Thermal Resistance Load Mismatch Stability rd Test Conditions Units MHz dBm dB dB mA - Min 1880 25.5 Typ Max 1900 26.5 0.2 24.5 350 1.6:1 1.4:1 27.5 0.5 420 2.0:1 2.0:1 VDD1 , VDD2 = 0 V VDD1 , VDD2 = 0 V dB dBc dBc 40 31 55 63 No degradation All spurs < -60 dBc Junction of 2nd stage FET to pin 11, Duty Cycle=50% VDD = 4.6 V, VSWR = 10:1, PIN = 7 dBm PIN = -3 to +7 dBm, VDD = 0 - 4.6 V, 0 mW < POUT < 450 mW, TS = -40 to +75 C, Load VSWR = 10:1 o C/W - 1. Ts is the temperature measured at the soldering point of pin 11. 2. Unless otherwise specified, input power is +2 dBm, VDD is +3.6 V, and test frequency is 1890 MHz. Absolute Maximum Ratings1 Parameter Max Input Power Operating Voltages Operating Temperature, Ts Channel Temperature Storage Temperature Absolute Maximum +6 dBm +5.5 volts -40 C to +75 C +150 C -40 C to +150 C 1. Exceeding any one or combination of these limits may cause permanent damage. Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 2 Part Description DECT RF Power Amplifier IC 3.6 V, 450 mW Application Information MA02203AD V 1.0 Static Sensitivity Gallium arsenide integrated circuits are ESD sensitive and can be damaged by static electricity. Use proper ESD precautions when handling these devices. Board Layout Sample Test Board 50 Ohm Lead Transition Typical Performance Curves Output Power and Current vs. Input Power 30 0.6 Output Power, PAE, and VSWR vs. Frequency 45 40 4:1 25 POUT, Output Power (dBm) POUT IDD, Drain Current (A) P OUT (dBm) and (%) 35 20 I DD 0.4 30 25 20 15 10 5 0 VSWR P OUT 3:1 Input VSWR 2:1 1:1 2 15 PIN = +2 dBm VDD = 3.6 V 10 f = 1.89 GHz VDD = 3.6 V 0.2 5 0 -10 -5 0 PIN, Input Power (dBm) 5 0.0 1.7 1.8 1.9 , Frequency (GHz) Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 3 Part Description DECT RF Power Amplifier IC 3.6 V, 450 mW Output Power and Current vs. Supply Voltage 30 25 POUT, Output Power (dBm) 20 IDD 15 10 =1.89 GHz PIN = +2 dBm 0.3 0.2 0.6 0.5 POUT, Output Power (dBm) IDD, Drain Current (A) 0.4 MA02203AD V 1.0 Harmonics 30 20 10 0 -10 -20 -30 -40 2 3 Frequency 4 5 o = 1.89 GHz PIN = +2 dBm VDD = 3.6 V POUT 5 0 2.8 3.0 3.2 0.1 0 3.4 3.6 3.8 4.0 VDD, Supply Voltage (V) 4.2 4.4 4.6 Output Power and Current vs. Frequency, Ts = -40oC 30 0.6 Output Power and Current vs. Frequency, Ts = +75oC 30 0.6 25 P OUT, Ouput Power (dBm) P OUT 0.5 P OUT, Ouput Power (dBm) IDD, Drain Current (A) 25 POUT 0.5 IDD, Drain Current (A) 20 IDD 0.4 20 IDD 0.4 15 0.3 15 0.3 10 P IN = +2 dBm V DD = 3.6 V 0.2 10 P IN = +2 dBm V DD = 3.6 V 0.2 5 0.1 Ts = -40 C 0 1.7 5 Ts = +75 C 1.7 0.1 0 1.8 1.9 , Frequency (GHz) 2 0 1.8 1.9 , Frequency (GHz) 2 0 Output Power and Current vs. Temperature 30 0.6 Power Dissipation vs. Temperature 3.0 25 P OUT, Output Power (dBm) 20 IDD 0.4 PDISS, Dissipated Power (W) P OUT 0.5 I DD, Drain Current (A) 2.5 2.0 Slope = -1 / RTH J-S 15 0.3 1.5 10 P IN = +2 dBm V DD = 3.6 V 0.2 1.0 5 0.1 0.5 0.0 0 25 50 75 100 125 150 TS, Temperature at Solder Point of Pin 11 (C) 175 0 -50 -25 0 25 50 TS, Operating Temperature (C) 75 0.0 Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 4 Part Description DECT RF Power Amplifier IC 3.6 V, 450 mW Application Schematic +VDD C1 C2 MA02203AD V 1.0 L1 L2 N/C 1 16 N/C 2 15 3 14 4 13 RF INPUT 5 12 RF OUTPUT 6 11 7 10 N/C 8 9 N/C 60mil GETEK Board List of components: C1 = C2 = 100 pF DLI multilayer ceramic chip capacitor (C11AH101K5TXL) L1 = 8.2 nH Coilcraft chip inductor (1008CT.080XKBB) L2 = 27 nH Coilcraft chip inductor (1008CS.270XKBB) SOIC-16 Narrow Body Package Symbol A A1 A2 B C D E e H L y Dimensions in millimeters Min Nom Max 1.35 1.60 1.75 0.10 0.25 1.45 0.33 0.41 0.51 0.19 0.20 0.25 9.80 9.91 10.01 3.80 3.91 4.00 1.27 5.79 5.99 6.20 0.38 0.71 1.27 0.10 0 8 Dimensions in inches Min 0.053 0.004 0.013 0.0075 0.386 0.150 0.228 0.015 0 Nom 0.063 0.057 0.016 0.008 0.390 0.154 0.050 0.236 0.028 Max 0.068 0.010 0.020 0.0098 0.394 0.157 0.244 0.050 0.004 8 NOTES: 1. 2. 3. 4. 5. 6. Controlling dimension: inch Lead frame material: copper alloy C151 Lead thickness after solder plating will be 0.013" maximum Dimension "D" does not include mold flash, protrusions or gate burrs Dimension "E" does not include interlead flash or protrusions Tolerance: 0.010" unless otherwise specified Specifications subject to change without notice. n North America: Tel. (800) 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 5 |
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