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| Semiconductor Laser LNC803PS High Power Output Semiconductor Laser Overview The LNC803PS is a GaAlAs laser diode which provides stable, continuous, single mode oscillation of near infrared light at room temperature. This product can be used in a wide range of light source applications, including laser printers, facsimiles, optical disk memory, and optical information devices. o1.0 min. o5.6 +0 -0.025 o4.30.1 o3.550.1 Unit : mm 2 0.40.1 1101 LD 1 Junction plane Reference plane 1.00.1 3 PD Features Low threshold oscillation Stable single horizontal mode oscillation Built-in PIN photodiode for light output monitors Light output is continuously variable as far as 60 mW Supports direct modulation Near infrared oscillating wavelength Long lifetime, high reliability 2.30.2 1.27 0.25 Reference slot Kovar glass LD pellet Reference plane o1.2max. 3-o0.45 2 1.20.1 6.50.5 0.5 max. 1 o2.0 Bottom view 3 1: LD Anode 2: Common Case 3: PD Cathode Absolute Maximum Ratings (Ta = 25C) Parameter Radiant power Reverse voltage Power dissipation Operating ambient temperature Storage temperature Laser PIN Symbol PO VR VR (PIN) Pd (PIN) Topr Tstg Ratings 40 1.5 30 100 -10 to +60 - 40 to +80 Unit mW V V mW C C Electro-Optical Characteristics (Ta = 25C) Parameter Threshold current Operating current Operating voltage Oscillation wavelength Radiation angle Horizontal direction Vertical direction Symbol Ith IOP VOP L //* * IR IP X Y CW Conditions PO = 32mW PO = 32mW PO = 32mW PO =32mW PO = 32mW CW PO = 28mW/I(30mW - 4mW) VR (PIN) = 5V PO = 32mW, VR (PIN) = 5V PO = 32mW PO = 32mW min 10 30 815 7 18 0.6 typ 25 50 2.0 830 10 25 1.0 max 40 90 3.0 845 13 28 1.5 0.1 Unit mA mA V nm deg. deg. mW/mA A mA deg. deg. Differential efficiency Reverse current (DC) PIN photo current Optical axis accuracy Oscillation mode * X direction Y direction -2.0 -3.0 +2.0 +3.0 Single horizontal mode // and are the angles where the optical intencity is a half of its max. value.( half full angle ) 1 Semiconductor Laser LNC803PS PO -- IOP 60 200 Ta = 25C 50 I--V 100 Far field pattern Radiant power PO (mW) 100 Relative radiant power PO 80 60 // 30 I (mA) 0 40 Current 40 20 -100 10 20 0 0 40 80 120 -200 -4 -2 0 2 4 0 40 20 0 20 40 Operating current IOP (mA) Voltage V (V) Angle (deg.) Ith -- Ta 10 2 10 3 IOP -- Ta 60 PO = 32mW 50 PO -- Ta IOP (mA) Ith (mA) PO (mW) Radiant power 10 30 50 70 10 2 10 - 10 40 Threshold current Operating current 10 30 20 10 1 - 10 10 30 50 70 0 - 10 10 30 50 70 Ambient temperature Ta (C ) Ambient temperature Ta (C ) Ambient temperature Ta (C ) Id -- Ta 10 2 VR (PIN) = 30V 10 Id (nA) PIN dark current 1 10 -1 10 -2 10 -3 - 10 10 30 50 70 Ambient temperature Ta (C ) 2 |
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