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| Infrared Light Emitting Diodes LN184 GaAlAs Infrared Light Emitting Diode Light source for distance measuring systems Features High-power output, high-efficiency : PO = 5 mW (typ.) Fast response and high-speed modulation capability : tr, tf = 20 ns(typ.) Infrared light emission close to monochromatics light : P = 880 nm (typ.) Narrow directivity using spherical lenses; works well with optical systems in auto focus systems 4.50.2 2.0 (0.29) ,,, o4.60.15 1.0 max. Unit : mm Glass window Spherical lens 12.7 min. (0.4) 2-o0.450.05 2 2.450.25 1 Absolute Maximum Ratings (Ta = 25C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Pulse Symbol PD IF IFP * Ratings 190 90 230 3 -25 to +85 - 40 to +100 Unit mW mA mA V C C o4.00.1 o5.75max. 1: Anode 2: Cathode VR Topr Tstg conditions : Pulse of f = 10 kHz and duty cycle = 50% modulated with pulse of f = 0.375 Hz (1.6 s) and duty cycle = 37.5% Electro-Optical Characteristics (Ta = 25C) Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Rise time Fall time Half-power angle Symbol PO P VF IR tr tf Conditions IF = 100mA IF = 100mA IF = 100mA IF = 100mA VR = 3V IFP = 100mA IFP = 100mA The angle in which radiant intencity is 50% min 3.5 typ 880 50 1.55 20 20 20 max Unit mW nm nm 1.9 10 V A ns ns deg. 1 LN184 Infrared Light Emitting Diodes IF -- Ta 120 160 IF -- VF 1 Ta = 25C 140 IFP -- VFP tw = 10s f = 100Hz Ta = 25C IF (mA) IF (mA) 120 100 80 60 40 20 Allowable forward current 80 Pulse forward current Forward current IFP (A) 10 -1 10 -2 0 100 60 40 20 0 - 25 0 20 40 60 80 100 0 0 0.5 1.0 1.5 2.0 1 2 3 4 5 Ambient temperature Ta (C ) Forward voltage VF (V) Pulse forward voltage VFP (V) PO -- IFP 10 3 (1) tw = 10s Duty = 0.1% (2) tw = 50s Duty = 50% (3) DC Ta = 25C (1) 10 (2) (3) 1 1.8 VF -- Ta 10 PO -- Ta IF = 100mA Relative radiant power PO VF (V) 10 2 IF = 100mA 1.4 Relative radiant power PO 1.6 Forward voltage 1 1.2 10mA 10 -1 1.0 1mA 10 -2 10 -3 10 -2 10 -1 1 10 0.8 - 40 0 40 80 120 10 -1 - 40 0 40 80 Pulse forward current IFP (A) Ambient temperature Ta (C ) Ambient temperature Ta (C ) P -- Ta 1000 IF = 100mA 100 Spectral characteristics IF = 100mA 80 Directivity characteristics 0 100 90 10 20 Peak emission wavelength P (nm) Relative radiant intensity (%) 900 80 70 Relative radiant intensity (%) 30 60 60 50 40 40 50 60 70 80 90 800 40 30 20 700 20 600 - 40 0 40 80 120 0 780 820 860 900 940 980 1020 Ambient temperature Ta (C ) Wavelength (nm) 2 |
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