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| SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES A super-minimold package houses 2 transistor. A1 KTA501U EPITAXIAL PLANAR PNP TRANSISTOR B B1 1 5 Excellent temperature response between these 2 transistor. High pairing property in hFE. The follwing characteristics are common for Q1, Q2. A 2 3 4 D DIM A A1 B B1 C D G H MILLIMETERS _ 2.00 + 0.20 _ 1.3 + 0.1 _ 2.1 + 0.1 _ 1.25 + 0.1 0.65 0.2+0.10/-0.05 0-0.1 _ 0.9 + 0.1 0.15+0.1/-0.05 C C T G T MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range * Total Rating. ) SYMBOL VCBO VCEO VEBO IC IB PC * Tj Tstg RATING -50 -50 -5 -150 -30 200 150 -55 150 UNIT V V V mA mA W H 1. Q 1 BASE 2. Q 1, Q 2 EMITTER 3. Q 2 BASE 4. Q 2 COLLECTOR 5. Q 1 COLLECTOR USV EQUIVALENT CIRCUIT (TOP VIEW) 5 4 Q1 Q2 1 2 3 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-EmitterSaturation Voltage Transition Frequency Collector Output Capacitance Noise Figure ICBO IEBO ) TEST CONDITION VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-6V, IC=-2 IC=-100 , IB=-10 MIN. 120 80 , Rg=10 TYP. -0.1 4 1.0 Type Name 5 4 SYMBOL MAX. -0.1 -0.1 400 -0.30 7 10 UNIT. hFE (Note) VCE(sat) fT Cob NF V VCE=-10V, IC=-1 VCB=-10V, IE=0, f=1 VCE=-6V, IC=-0.1 , f=1 Note : hFE Classification Y(4):120 240, GR(6):200 400 Marking S 1 2 3 hFE Rank 2003. 2. 25 Revision No : 4 1/3 KTA501U I C - VCE COLLECTOR CURRENT I C (mA) -240 -200 -160 -120 -80 -40 0 I B =-0.5mA I B =-0.2mA I B =0mA I B =-2.0mA I B =-1.5mA I B =-1.0mA COMMON EMITTER Ta=25 C h FE - I C 3k DC CURRENT GAIN h FE COMMON EMITTER 1k 500 300 Ta=100 C Ta=25 C VCE =-6V 100 50 Ta=-25 C VCE =-1V 0 -1 -2 -3 -4 -5 -6 -7 30 -0.1 -0.3 -1 -3 -10 -30 -100 -300 COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -1 -0.5 -0.3 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COMMON EMITTER I C /I B =10 VBE(sat) - I C -10 -5 -3 COMMON EMITTER I C/I B=10 Ta=25 C -0.1 -0.05 -0.03 00 =1 Ta C -1 -0.5 -0.3 Ta=25 C Ta=-25 C -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 -300 -0.1 -0.1 -0.3 -1 -3 -10 -30 -100 -300 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) fT - IC TRANSITION FREQUENCY f T (MHz) 3k 1k 500 300 100 50 30 10 0.1 COMMON EMITTER VCE =-10V Ta=25 C I B - V BE -1k BASE CURRENT IB (A) -300 -100 Ta=2 5C Ta=-2 5C 00 C COMMON EMITTER VCE =-6V -30 -10 -3 -1 -0.3 0 -0.2 -0.4 0.3 1 3 10 30 100 300 Ta=1 -0.6 -0.8 -1.0 -1.2 COLLECTOR CURRENT I C (mA) BASE-EMITTER VOLTAGE VBE (V) 2003. 2. 25 Revision No : 4 2/3 KTA501U COLLECTOR POWER DISSIPATION P C (mW) Pc - Ta 250 200 150 100 50 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) 2003. 2. 25 Revision No : 4 3/3 |
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