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| SEMICONDUCTOR TECHNICAL DATA RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS AND STROBES APPLICATION. KTA1544T EPITAXIAL PLANAR PNP TRANSISTOR E FEATURES Adoption of MBIT Processes. Large Current Capacitance. Low Collector-to-Emitter Saturation Voltage. A F G K B DIM A B 2 3 C D MILLIMETERS _ 2.9 + 0.2 1.6+0.2/-0.1 _ 0.70 + 0.05 _ 0.4 + 0.1 2.8+0.2/-0.3 _ 1.9 + 0.2 0.95 _ 0.16 + 0.05 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 D Ultrasmall Package facilitates miniaturization in end products. High Allowable Power Dissipation. Complementary to KTC3544T. C L G High Speed Switching. 1 E F G H I J K L J CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse SYMBOL VCBO VCEO VEBO IC ICP IB PC * Tj Tstg 0.8 RATING -30 -30 -6 -2 -4 -400 0.9 150 -55 ) 150 UNIT V V V A mA W 1. EMITTER 2. BASE 3. COLLECTOR Marking Lot No. Type Name * Package mounted on a ceramic board (600 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Transition Frequency Collector Output Capacitance Turn-On Time Swiitching Time SYMBOL ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) hFE fT Cob ton INPUT TEST CONDITION VCB=-20V, IE=0 VEB=-3V, IC=0 IC=-10 A, IE=0 IC=-1mA, IB=0 IE=-10 A, IC=0 IC=-1.5A, IB=-75mA IC=-1.5A, IB=-75mA VCE=-2V, IC=-100mA VCE=-10V, IC=-50mA VCB=-10V, f=1MHz PW=20s DC < 1% = IB1 I B2 RB 50 VR 100F 470F VCC =-12V 24 OUTPUT MIN. -30 -30 -6 200 - Storage Time tstg Fall Time tf V BE =5V -20IB1=20IB2=IC =-500mA 2001. 11. 7 Revision No : 0 I J MAXIMUM RATING (Ta=25 ) H TSM SN TYP. -350 -0.85 150 32 60 MAX. -0.1 -0.1 -600 -1.2 560 MHz pF UNIT A A V V V mV V - 350 - nS - 25 - 1/3 KTA1544T I C - V CE 0m -15 A -1 0mA 00 mA h FE - I C mA -30 mA -20 -2.0 COLLECTOR CURRENT I C (A) -1.8 -1.6 0m -20 -5 0m A 1K DC CURRENT GAIN h FE 500 300 -40 mA VCE =-2V -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 0 -10mA -8mA -6mA -4mA -2mA I B =0mA -25 A 100 50 30 -0.01 -0.03 -0.1 -0.3 -1 -2 -0.2 -0.4 -0.6 -0.8 -1.0 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (A) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -1 -0.5 -0.3 COLLECTOR CURRENT I C (A) IC /I B =10 I C - VBE -2.0 V CE =-2V -1.6 -1.2 -0.8 -0.4 0 -0.1 -0.05 -0.03 -0.01 -0.005 -0.01 -0.03-0.05 -0.1 -0.3 -0.5 -1 -2 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 COLLECTOR CURRENT I C (A) BASE-EMITTER VOLTAGE V BE (V) fT - IC TRANSITION FREQUENCY f T (MHz) VCE =-10V C ob - V CB COLLECTOR OUTPUT CAPACITANCE C ob (pF) 100 70 50 30 f=-1MHz 1K 500 300 100 50 30 10 -0.01 10 -1 -3 -5 -10 -30 -50 COLLECTOR-BASE VOLTAGE VCB (V) -0.03 -0.1 -0.3 -0.1 -0.2 COLLECTOR CURRENT I C (A) 2001. 11. 7 Revision No : 0 2/3 KTA1544T SAFE OPERATING AREA COLLECTOR POWER DISSIPATION PC (W) -10 -5 COLLECTOR CURRENT I C (A) -3 I C MAX.(PULSED) 10 S 0 Pc - Ta 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 MOUNTED ON A CERAMIC BOARD (600mm 2 0.8mm) I C MAX (CONTINUOUS) DC 10 0 50 m * S* S* 1m -1 -0.5 -0.3 OP ER S* 10 AT 0m S* -0.1 -0.05 -0.02 -0.2 IO N SINGLE NONREPETITIVE * PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE MOUNTED ON A CERAMIC BOARD (600mm 2 0.8mm) AMBIENT TEMPERATURE Ta ( C) -30 -50 -0.5 -1 -3 -5 -10 COLLECTOR-EMITTER VOLTAGE V CE (V) 2001. 11. 7 Revision No : 0 3/3 |
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