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| DDR SDRAM 256Mb E-die (x4, x8) Pb-Free DDR SDRAM 256Mb E-die DDR SDRAM Specification 54 sTSOP-II with Pb-Free (RoHS compliant) (300mill x 551mil) Revision 1.1 October, 2004 Rev. 1.1 October, 2004 DDR SDRAM 256Mb E-die (x4, x8) Pb-Free 256Mb E-die Revision History Revision 1.0 (February, 2004) -First release Revision 1.1 (October, 2004) -Corrected typo. DDR SDRAM Rev. 1.1 October, 2004 DDR SDRAM 256Mb E-die (x4, x8) Pb-Free Key Features * Double-data-rate architecture; two data transfers per clock cycle * Bidirectional data strobe(DQS) * Four banks operation * Differential clock inputs(CK and CK) * DLL aligns DQ and DQS transition with CK transition * MRS cycle with address key programs -. Read latency 2, 2.5 (clock) -. Burst length (2, 4, 8) -. Burst type (sequential & interleave) * All inputs except data & DM are sampled at the positive going edge of the system clock(CK) * Data I/O transactions on both edges of data strobe * Edge aligned data output, center aligned data input * DM for write masking only (x4, x8) * Auto & Self refresh * 7.8us refresh interval(8K/64ms refresh) * Maximum burst refresh cycle : 8 * 54pin sTSOP(II)-300 Pb-Free package * RoHS compliant DDR SDRAM Ordering Information Part No. K4H560438E-VC/LB3 K4H560438E-VC/LA2 K4H560438E-VC/LB0 K4H560838E-VC/LB3 K4H560838E-VC/LA2 K4H560838E-VC/LB0 32M x 8 64M x 4 Org. Max Freq. B3(DDR333@CL=2.5) A2(DDR266@CL=2) B0(DDR266@CL=2.5) B3(DDR333@CL=2.5) A2(DDR266@CL=2) B0(DDR266@CL=2.5) SSTL2 54pin sTSOP(II)-300 SSTL2 54pin sTSOP(II)-300 Interface Package Operating Frequencies B3(DDR333@CL=2.5) Speed @CL2 Speed @CL2.5 *CL : CAS Latency 133MHz 166MHz AA(DDR266@CL=2.0) 133MHz 133MHz A2(DDR266@CL=2.0) 133MHz 133MHz B0(DDR266@CL=2.5) 100MHz 133MHz Rev. 1.1 October, 2004 DDR SDRAM 256Mb E-die (x4, x8) Pb-Free Pin Description DDR SDRAM 54pin sTSOP(II)-300 32Mb x 8 64Mb x 4 VDD DQ0 VDDQ DQ1 VSSQ DQ2 VDDQ DQ3 VSSQ NC VDDQ NC NC VDD WE CAS RAS CS NC BA0 BA1 AP/A10 A0 A1 A2 A3 VDD VDD NC VDDQ DQ0 VSSQ NC VDDQ DQ1 VSSQ NC VDDQ NC NC VDD WE CAS RAS CS NC BA0 BA1 AP/A10 A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 VSS NC VSSQ DQ3 VDDQ NC VSSQ DQ2 VDDQ NC VSSQ DQS VREF VSS DM CK CK CKE A12 A11 A9 A8 A7 A6 A5 A4 VSS VSS DQ7 VSSQ DQ6 VDDQ DQ5 VSSQ DQ4 VDDQ NC VSSQ DQS VREF VSS DM CK CK CKE A12 A11 A9 A8 A7 A6 A5 A4 VSS 54 PinsTSOP(II) 300mil x 551mil (7.62mm x 14.00mm) (0.5 mm Pin Pitch) Bank Address BA0-BA1 Row Address A0-A12 Auto Precharge A10 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 Organization 64Mx4 32Mx8 Row Address A0~A12 A0~A12 Column Address A0-A9, A11 A0-A9 DM is internally loaded to match DQ and DQS identically. Row & Column address configuration Rev. 1.1 October, 2004 DDR SDRAM 256Mb E-die (x4, x8) Pb-Free Package Physical Dimension 54pin sTSOP(II)-300 DDR SDRAM Units : Millimeters (0.50) (14) #1 #27 (0.50) (8.22) (0.80) 0.125 +0.075 -0.035 (2-R 0.15) #54 #28 (0.80) (2-R 0.30) ( 2.00 Dp0~0.05 BTM) 9.220.20 (1.00) 0.6650.05 0.2100.05 (1.00) 7.6 0.1 5) (1.10) (R 0.2 5 0.10 MAX ) 0. 30 ) (14) NOTE 1. ( ) IS REFERENCE 2. [ ] IS ASS'Y OUT QUALITY 0.05 MIN (0.50) 0.50TYP 0.500.05 [ 0.07 MAX ] 0.20 +0.075 -0.035 (2 -R 0x~8x Rev. 1.1 October, 2004 (R 0. 25 ) (14 ) (2R (14) 1.000.05 1.20MAX 14.40MAX (14.20) 14.000.10 0.25TYP 0.40~0.60 DDR SDRAM 256Mb E-die (x4, x8) Pb-Free Block Diagram (16Mbit x 4 / 8Mbit x 8 I/O x 4 Banks) DDR SDRAM x4/8 LWE LDM I/O Control CK, CK Data Input Register Serial to parallel Bank Select x8/16 8Mx8/ 4Mx16 Output Buffer 2-bit prefetch Sense AMP Refresh Counter Row Buffer Row Decoder 8Mx8/ 4Mx16 8Mx8/ 4Mx16 8Mx8/ 4Mx16 x8/16 x4/8 x4/8 DQi Address Register CK, CK ADD Column Decoder LCBR LRAS Col. Buffer Latency & Burst Length Strobe Gen. DLL Data Strobe LCKE Programming Register LRAS LCBR LWE LCAS LWCBR CK, CK LDM Timing Register CK, CK CKE CS RAS CAS WE DM Rev. 1.1 October, 2004 DDR SDRAM 256Mb E-die (x4, x8) Pb-Free Input/Output Function Description SYMBOL CK, CK TYPE Input DESCRIPTION DDR SDRAM Clock : CK and CK are differential clock inputs. All address and control input signals are sampled on the positive edge of CK and negative edge of CK. Output (read) data is referenced to both edges of CK. Internal clock signals are derived from CK/CK. Clock Enable : CKE HIGH activates, and CKE LOW deactivates internal clock signals, and device input buffers and output drivers. Deactivating the clock provides PRECHARGE POWER-DOWN and SELF REFRESH operation (all banks idle), or ACTIVE POWER-DOWN (row ACTIVE in any bank). CKE is synchronous for all functions except for disabling outputs, which is achieved asynchronously. Input buffers, excluding CK, CK and CKE are disabled during power-down and self refresh modes, providing low standby power. CKE will recognize an LVCMOS LOW level prior to VREF being stable on power-up. Chip Select : CS enables(registered LOW) and disables(registered HIGH) the command decoder. All commands are masked when CS is registered HIGH. CS provides for external bank selection on systems with multiple banks. CS is considered part of the command code. Command Inputs : RAS, CAS and WE (along with CS) define the command being entered. Input Data Mask : DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH along with that input data during a WRITE access. DM is sampled on both edges of DQS. Although DM pins are input only, the DM loading matches the DQ and DQS loading. Bank Addres Inputs : BA0 and BA1 define to which bank an ACTIVE, READ, WRITE or PRECHARGE command is being applied. Address Inputs : Provide the row address for ACTIVE commands, and the column address and AUTO PRECHARGE bit for READ/WRITE commands, to select one location out of the memory array in the respective bank. A10 is sampled during a PRECHARGE command to determine whether the PRECHARGE applies to one bank (A10 LOW) or all banks (A10 HIGH). If only one bank is to be precharged, the bank is selected by BA0, BA1. The address inputs also provide the op-code during a MODE REGISTER SET command. BA0 and BA1 define which mode register is loaded during the MODE REGISTER SET command (MRS or EMRS). Data Input/Output : Data bus Data Strobe : Output with read data, input with write data. Edge-aligned with read data, centered in write data. Used to capture write data. No Connect : No internal electrical connection is present. DQ Power Supply : +2.5V 0.2V. DQ Ground. Power Supply : +2.5V 0.2V (device specific). Ground. SSTL_2 reference voltage. CKE Input CS RAS, CAS, WE Input Input DM Input BA0, BA1 Input A [0 : 12] Input DQ DQS NC VDDQ VSSQ VDD VSS VREF I/O I/O Supply Supply Supply Supply Input Rev. 1.1 October, 2004 DDR SDRAM 256Mb E-die (x4, x8) Pb-Free Command Truth Table COMMAND Register Register Extended MRS Mode Register Set Auto Refresh Refresh Self Refresh Entry Exit CKEn-1 CKEn H H H L H H H H Bank Selection All Banks Entry Exit Entry Precharge Power Down Mode Exit DM(UDM/LDM for x16 only) No operation (NOP) : Not defined L H H X H L H H H L H X X H L H X X X X X L H L CS L L L L H L L L L L H L X H L H L RAS L L L H X L H H H L X V X X H X V X X H X H X H DDR SDRAM (V=Valid, X=Dont Care, H=Logic High, L=Logic Low) A0 ~ A9, A11,A12 CAS L L L H X H L L H H X V X X H X V WE L L H H X H H L L L X V X X H X V BA0,1 A10/AP Note 1, 2 1, 2 3 3 3 3 4 4 4 4, 6 7 OP CODE OP CODE X X V V V L H L H X V X L H X X Row Address Column Address Column Address Bank Active & Row Addr. Read & Column Address Write & Column Address Burst Stop Precharge Auto Precharge Disable Auto Precharge Enable Auto Precharge Disable Auto Precharge Enable 5 Active Power Down X X X 8 9 9 Note :1. OP Code : Operand Code. A0 ~ A12 & BA0 ~ BA1 : Program keys. (@EMRS/MRS) 2. EMRS/MRS can be issued only at all banks precharge state. A new command can be issued 2 clock cycles after EMRS or MRS. 3. Auto refresh functions are same as the CBR refresh of DRAM. The automatical precharge without row precharge command is meant by "Auto". Auto/self refresh can be issued only at all banks precharge state. 4. BA0 ~ BA1 : Bank select addresses. If both BA0 and BA1 are "Low" at read, write, row active and precharge, bank A is selected. If BA0 is "High" and BA1 is "Low" at read, write, row active and precharge, bank B is selected. If BA0 is "Low" and BA1 is "High" at read, write, row active and precharge, bank C is selected. If both BA0 and BA1 are "High" at read, write, row active and precharge, bank D is selected. 5. If A10/AP is "High" at row precharge, BA0 and BA1 are ignored and all banks are selected. 6. During burst write with auto precharge, new read/write command can not be issued. Another bank read/write command can be issued after the end of burst. New row active of the associated bank can be issued at tRP after the end of burst. 7. Burst stop command is valid at every burst length. 8. DM(x4/8) sampled at the rising and falling edges of the DQS and Data-in are masked at the both edges (Write DM latency is 0). 9. This combination is not defined for any function, which means "No Operation(NOP)" in DDR SDRAM. Rev. 1.1 October, 2004 DDR SDRAM 256Mb E-die (x4, x8) Pb-Free DDR SDRAM 16M x 4Bit x 4 Banks / 8M x 8Bit x 4 Banks Double Data Rate SDRAM General Description The K4H560438E / K4H560838E is 268,435,456 bits of double data rate synchronous DRAM organized as 4x 16,777,216 / 4x 8,388,608 words by 4/ 8/ bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 333Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications. Absolute Maximum Rating Parameter Voltage on any pin relative to VSS Voltage on VDD & VDDQ supply relative to VSS Storage temperature Power dissipation Short circuit current Symbol VIN, VOUT VDD, VDDQ TSTG PD IOS Value -0.5 ~ 3.6 -1.0 ~ 3.6 -55 ~ +150 1.5 50 Unit V V C W mA Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to recommend operation condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability. DC Operating Conditions Parameter Recommended operating conditions(Voltage referenced to VSS=0V, TA=0 to 70C) Symbol VDD VDDQ VREF VTT VIH(DC) VIL(DC) VIN(DC) VID(DC) VI(Ratio) II IOZ IOH IOL IOH IOL Min 2.3 2.3 0.49*VDDQ VREF-0.04 VREF+0.15 -0.3 -0.3 0.36 0.71 -2 -5 -16.8 16.8 -9 9 Max 2.7 2.7 0.51*VDDQ VREF+0.04 VDDQ+0.3 VREF-0.15 VDDQ+0.3 VDDQ+0.6 1.4 2 5 Unit V V V V V V V uA uA mA mA mA mA Note Supply voltage(for device with a nominal VDD of 2.5V) I/O Supply voltage I/O Reference voltage I/O Termination voltage(system) Input logic high voltage Input logic low voltage Input Voltage Level, CK and CK inputs Input Differential Voltage, CK and CK inputs V-I Matching: Pullup to Pulldown Current Ratio Input leakage current Output leakage current Output High Current(Normal strengh driver) ;VOUT = VTT + 0.84V Output High Current(Normal strengh driver) ;VOUT = VTT - 0.84V Output High Current(Half strengh driver) ;VOUT = VTT + 0.45V Output High Current(Half strengh driver) ;VOUT = VTT - 0.45V 1 2 3 4 Note : 1.VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the dc level of same. Peak-to peak noise on VREF may not exceed +/-2% of the dc value. 2. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF, and must track variations in the DC level of VREF 3. VID is the magnitude of the difference between the input level on CK and the input level on CK. 4. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire temperature and voltage range, for device drain to source voltages from 0.25V to 1.0V. For a given output, it represents the maximum difference between pullup and pulldown drivers due to process variation. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1/7 for device drain to source voltages from 0.1 to 1.0. Rev. 1.1 October, 2004 DDR SDRAM 256Mb E-die (x4, x8) Pb-Free DDR SDRAM Spec Items & Test Conditions Conditions Operating current - One bank Active-Precharge; tRC=tRCmin; tCK=10ns for DDR200, 7.5ns for DDR266, 6ns for DDR333; DQ,DM and DQS inputs changing once per clock cycle; address and control inputs changing once every two clock cycles. Operating current - One bank operation ; One bank open, BL=4, Reads - Refer to the following page for detailed test condition DDR SDRAM Symbol IDD0 IDD1 IDD2P IDD2F Percharge power-down standby current; All banks idle; power - down mode; CKE = IDD2Q IDD3P IDD3N IDD4R IDD4W IDD5 IDD6 IDD7A Input/Output Capacitance Parameter Input capacitance (A0 ~ A12, BA0 ~ BA1, CKE, CS, RAS,CAS, WE) Input capacitance( CK, CK ) Data & DQS input/output capacitance Input capacitance(DM for x4/8) (VDD=2.5, VDDQ=2.5V, TA= 25C, f=1MHz) Symbol CIN1 CIN2 COUT CIN3 Min 2 2 4 4 Max 3 3 5 5 Delta 0.5 0.25 0.5 Unit pF pF pF pF Note 4 4 1,2,3,4 1,2,3,4 Note : 1.These values are guaranteed by design and are tested on a sample basis only. 2. Although DM is an input -only pin, the input capacitance of this pin must model the input capacitance of the DQ and DQS pins. This is required to match signal propagation times of DQ, DQS, and DM in the system. 3. Unused pins are tied to ground. 4. This parameteer is sampled. VDDQ = +2.5V +0.2V, VDD = +3.3V +0.3V or +0.25V+0.2V, f=100MHz, tA=25C, Vout(dc) = VDDQ/2, Vout(peak to peak) = 0.2V. DM inputs are grouped with I/O pins - reflecting the fact that they are matched in loading (to facilitate trace matching at the board level). Rev. 1.1 October, 2004 DDR SDRAM 256Mb E-die (x4, x8) Pb-Free DDR SDRAM IDD spec table Symbol IDD0 IDD1 IDD2P IDD2F IDD2Q IDD3P IDD3N IDD4R IDD4W IDD5 IDD6 Normal Low power IDD7A DDR SDRAM (VDD=2.7V, T = 10C) 64Mx4 (K4H560438E) B3(DDR333@CL=2.5) 90 110 3 25 20 35 55 140 160 170 3 1.5 260 A2(DDR266@CL=2.0) 90 110 3 20 18 30 45 120 135 160 3 1.5 260 B0(DDR266@CL=2.5) 80 100 3 20 18 30 45 120 135 160 3 1.5 240 Unit mA mA mA mA mA mA mA mA mA mA mA mA mA Notes Optional Symbol IDD0 IDD1 IDD2P IDD2F IDD2Q IDD3P IDD3N IDD4R IDD4W IDD5 IDD6 Normal Low power IDD7A 32Mx8 (K4H560838E) B3(DDR333@CL=2.5) 90 115 3 25 20 35 55 160 160 170 3 1.5 280 A2(DDR266@CL=2.0) 90 115 3 20 18 30 45 140 135 160 3 1.5 280 B0(DDR266@CL=2.5) 80 105 3 20 18 30 45 140 135 160 3 1.5 250 Unit mA mA mA mA mA mA mA mA mA mA mA mA mA Notes Optional Rev. 1.1 October, 2004 DDR SDRAM 256Mb E-die (x4, x8) Pb-Free < Detailed test conditions for DDR SDRAM IDD1 & IDD7A > IDD1 : Operating current: One bank operation DDR SDRAM 1. Only one bank is accessed with tRC(min), Burst Mode, Address and Control inputs on NOP edge are changing once per clock cycle. lout = 0mA 2. Timing patterns - B0(133Mhz, CL=2.5) : tCK = 7.5ns, CL=2.5, BL=4, tRCD = 3*tCK, tRC = 9*tCK, tRAS = 6*tCK Read : A0 N N R0 N N P0 N N A0 N - repeat the same timing with random address changing *50% of data changing at every burst - A2 (133Mhz, CL=2) : tCK = 7.5ns, CL=2, BL=4, tRCD = 3*tCK, tRC = 9*tCK, tRAS = 6*tCK Read : A0 N N R0 N N P0 N N A0 N - repeat the same timing with random address changing *50% of data changing at every burst - B3(166Mhz, CL=2.5) : tCK=6ns, CL=2.5, BL=4, tRCD=3*tCK, tRC = 10*tCK, tRAS=7*tCK Read : A0 N N R0 N N P0 N N A0 N - repeat the same timing with random address changing *50% of data changing at every burst Legend : A=Activate, R=Read, W=Write, P=Precharge, N=NOP IDD7A : Operating current: Four bank operation 1. Typical Case : Vdd = 2.5V, T=25' C 2. Worst Case : Vdd = 2.7V, T= 10' C 3. Four banks are being interleaved with tRC(min), Burst Mode, Address and Control inputs on NOP edge are not changing. lout = 0mA 4. Timing patterns - B0(133Mhz, CL=2.5) : tCK = 7.5ns, CL=2.5, BL=4, tRRD = 2*tCK, tRCD = 3*tCK, Read with autoprecharge Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing *50% of data changing at every burst - A2(133Mhz, CL=2) : tCK = 7.5ns, CL2=2, BL=4, tRRD = 2*tCK, tRCD = 3*tCK, Read with autoprecharge Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing *50% of data changing at every burst - B3(166Mhz,CL=2.5) : tCK=6ns, CL=2.5, BL=4, tRRD=2*tCK, tRCD=3*tCK, Read with autoprecharge Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing *50% of data changing at every burst Legend : A=Activate, R=Read, W=Write, P=Precharge, N=NOP Rev. 1.1 October, 2004 DDR SDRAM 256Mb E-die (x4, x8) Pb-Free AC Operating Conditions Parameter/Condition Input High (Logic 1) Voltage, DQ, DQS and DM signals Input Low (Logic 0) Voltage, DQ, DQS and DM signals. Input Differential Voltage, CK and /CK inputs Input Crossing Point Voltage, CK and /CK inputs Symbol VIH(AC) VIL(AC) VID(AC) VIX(AC) 0.7 0.5*VDDQ-0.2 Min VREF + 0.31 VREF - 0.31 VDDQ+0.6 Max-10 DDR SDRAM Unit V V V V Note 1 2 0.5*VDDQ+0.2 Notes : 1. VID is the magnitude of the difference between the input level on CK and the input level on /CK. 2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the dc level of the same. AC Overshoot/Undershoot specification for Address and Control Pins Parameter Maximum peak amplitude allowed for overshoot Maximum peak amplitude allowed for undershoot The area between the overshoot signal and VDD must be less than or equal to The area between the undershoot signal and GND must be less than or equal to Specification DDR333 TBD TBD TBD TBD DDR200/266 1.5 V 1.5 V 4.5 V-ns 4.5 V-ns VDD 5 4 3 2 Volts (V) 1 0 -1 -2 -3 -4 -5 0 Overshoot Maximum Amplitude = 1.5V Area = 4.5V-ns Maximum Amplitude = 1.5V GND 0.6875 1.5 2.5 3.5 4.5 5.5 6.3125 7.0 0.5 1.0 2.0 3.0 4.0 5.0 6.0 6.5 Tims(ns) undershoot AC overshoot/Undershoot Definition Rev. 1.1 October, 2004 DDR SDRAM 256Mb E-die (x4, x8) Pb-Free Overshoot/Undershoot specification for Data, Strobe, and Mask Pins Parameter Maximum peak amplitude allowed for overshoot Maximum peak amplitude allowed for undershoot The area between the overshoot signal and VDD must be less than or equal to The area between the undershoot signal and GND must be less than or equal to DDR SDRAM Specification DDR333 TBD TBD TBD TBD DDR200/266 1.2 V 1.2 V 2.4 V-ns 2.4 V-ns VDDQ Overshoot 5 4 3 2 Volts (V) 1 0 -1 -2 -3 -4 -5 0 0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0 Tims(ns) undershoot Maximum Amplitude = 1.2V GND Area = 2.4V-ns Maximum Amplitude = 1.2V DQ/DM/DQS AC overshoot/Undershoot Definition Rev. 1.1 October, 2004 DDR SDRAM 256Mb E-die (x4, x8) Pb-Free AC Timming Parameters & Specifications Parameter Row cycle time Refresh row cycle time Row active time RAS to CAS delay Row precharge time Row active to Row active delay Write recovery time Last data in to Read command Col. address to Col. address delay Clock cycle time Clock high level width Clock low level width DQS-out access time from CK/CK Output data access time from CK/CK Data strobe edge to ouput data edge Read Preamble Read Postamble CK to valid DQS-in DQS-in setup time DQS-in hold time DQS falling edge to CK rising-setup time DQS falling edge from CK rising-hold time DQS-in high level width DQS-in low level width DQS-in cycle time Address and Control Input setup time(fast) Address and Control Input hold time(fast) Address and Control Input setup time(slow) Address and Control Input hold time(slow) Data-out high impedence time from CK/CK Data-out low impedence time from CK/CK Input Slew Rate(for input only pins) Input Slew Rate(for I/O pins) Output Slew Rate(x4,x8) Output Slew Rate Matching Ratio(rise to fall) CL=2.0 CL=2.5 DDR SDRAM A2 (DDR266@CL=2.0) Min 65 75 Symbol tRC tRFC tRAS tRCD tRP tRRD tWR tWTR tCCD tCK tCH tCL tDQSCK tAC tDQSQ tRPRE tRPST tDQSS tWPRES tWPRE tDSS tDSH tDQSH tDQSL tDSC tIS tIH tIS tIH tHZ tLZ tSL(I) tSL(IO) tSL(O) tSLMR B3 (DDR333@CL=2.5)) Min 60 72 42 18 18 12 15 1 1 7.5 6 0.45 0.45 -0.6 -0.7 0.9 0.4 0.75 0 0.25 0.2 0.2 0.35 0.35 0.9 0.75 0.75 0.8 0.8 -0.7 -0.7 0.5 0.5 1.0 0.67 4.5 1.5 +0.7 +0.7 1.1 12 12 0.55 0.55 +0.6 +0.7 0.45 1.1 0.6 1.25 70K B0 (DDR266@CL=2.5)) Min 65 75 Unit ns ns Note Max Max Max 45 20 20 15 15 1 1 7.5 7.5 0.45 0.45 -0.75 -0.75 0.9 0.4 0.75 0 0.25 0.2 0.2 0.35 0.35 0.9 0.9 0.9 1.0 1.0 -0.75 -0.75 0.5 0.5 1.0 0.67 120K 45 20 20 15 15 1 1 120K ns ns ns ns ns tCK tCK 12 12 0.55 0.55 +0.75 +0.75 0.5 1.1 0.6 1.25 10 7.5 0.45 0.45 -0.75 -0.75 0.9 0.4 0.75 0 0.25 0.2 0.2 0.35 0.35 12 12 0.55 0.55 +0.75 +0.75 0.5 1.1 0.6 1.25 ns ns tCK tCK ns ns ns tCK tCK tCK ns tCK tCK tCK tCK tCK 3 12 1.1 0.9 0.9 0.9 1.0 1.0 1.1 tCK ns ns ns ns i,5.7~ i,5.7~ i, 6~9 i, 6~9 1 1 +0.75 +0.75 -0.75 -0.75 0.5 0.5 +0.75 +0.75 ns ns V/ns V/ns 4.5 1.5 1.0 0.67 4.5 1.5 V/ns Rev. 1.1 October, 2004 DDR SDRAM 256Mb E-die (x4, x8) Pb-Free B3 (DDR333@CL=2.5)) Min Mode register set cycle time DQ & DM setup time to DQS DQ & DM hold time to DQS Control & Address input pulse width DQ & DM input pulse width Power down exit time Exit self refresh to non-Read command Exit self refresh to read command Refresh interval time Output DQS valid window Clock half period Data hold skew factor DQS write postamble time Active to Read with Auto precharge command Autoprecharge write recovery + Precharge time tMRD tDS tDH tIPW tDIPW tPDEX tXSNR tXSRD tREFI tQH tHP tQHS tWPST tRAP 0.4 18 (tWR/tCK) + (tRP/tCK) tHP -tQHS tCLmin or tCHmin 12 0.45 0.45 2.2 1.75 6 75 200 7.8 0.55 0.6 0.4 20 (tWR/tCK) + (tRP/tCK) tHP -tQHS tCLmin or tCHmin DDR SDRAM B0 (DDR266@CL=2.5)) Min 15 0.5 0.5 2.2 1.75 7.5 75 200 7.8 0.75 0.6 0.4 20 (tWR/tCK) + (tRP/tCK) tHP -tQHS tCLmin or tCHmin 7.8 0.75 0.6 Parameter Symbol A2 (DDR266@CL=2.0) Min 15 0.5 0.5 2.2 1.75 7.5 75 200 Unit ns ns ns ns ns ns ns tCK us ns ns ns tCK Note Max Max Max j, k j, k 8 8 4 11 10, 11 11 2 tDAL tCK 13 System Characteristics for DDR SDRAM The following specification parameters are required in systems using DDR333, DDR266 & DDR200 devices to ensure proper system performance. these characteristics are for system simulation purposes and are guaranteed by design. Table 1 : Input Slew Rate for DQ, DQS, and DM AC CHARACTERISTICS PARAMETER DQ/DM/DQS input slew rate measured between VIH(DC), VIL(DC) and VIL(DC), VIH(DC) SYMBOL DCSLEW DDR333 MIN TBD MAX TBD DDR266 MIN TBD MAX TBD DDR200 MIN 0.5 MAX 4.0 Units V/ns Notes a, m Table 2 : Input Setup & Hold Time Derating for Slew Rate Input Slew Rate 0.5 V/ns 0.4 V/ns 0.3 V/ns tIS 0 +50 +100 tIH 0 0 0 Units ps ps ps Notes i i i Table 3 : Input/Output Setup & Hold Time Derating for Slew Rate Input Slew Rate 0.5 V/ns 0.4 V/ns 0.3 V/ns tDS 0 +75 +150 tDH 0 +75 +150 Units ps ps ps Notes k k k Rev. 1.1 October, 2004 DDR SDRAM 256Mb E-die (x4, x8) Pb-Free Table 4 : Input/Output Setup & Hold Derating for Rise/Fall Delta Slew Rate Delta Slew Rate +/- 0.0 V/ns +/- 0.25 V/ns +/- 0.5 V/ns tDS 0 +50 +100 tDH 0 +50 +100 Units ps ps ps Notes j j j DDR SDRAM Table 5 : Output Slew Rate Characteristice (X4, X8 Devices only) Slew Rate Characteristic Pullup Slew Rate Pulldown slew Typical Range (V/ns) 1.2 ~ 2.5 1.2 ~ 2.5 Minimum (V/ns) 1.0 1.0 Maximum (V/ns) 4.5 4.5 Notes a,c,d,f,g,h b,c,d,f,g,h Table 6 : Output Slew Rate Matching Ratio Characteristics AC CHARACTERISTICS PARAMETER Output Slew Rate Matching Ratio (Pullup to Pulldown) DDR266A MIN TBD MAX TBD DDR266B MIN TBD MAX TBD DDR200 MIN 0.67 MAX 1.5 Notes e,m Rev. 1.1 October, 2004 DDR SDRAM 256Mb E-die (x4, x8) Pb-Free Component Notes DDR SDRAM 1. tHZ and tLZ transitions occur in the same access time windows as valid data transitions. these parameters are not referenced to a specific voltage level but specify when the device output in no longer driving (HZ), or begins driving (LZ). 2. The maximum limit for this parameter is not a device limit. The device will operate with a greater value for this parameter, but sys tem performance (bus turnaround) will degrade accordingly. 3. The specific requirement is that DQS be valid (HIGH, LOW, or at some point on a valid transition) on or before this CK edge. A valid transition is defined as monotonic and meeting the input slew rate specifications of the device. when no writes were previ ously in progress on the bus, DQS will be tran sitioning from High- Z to logic LOW. If a previous write was in progress, DQS could be HIGH, LOW, or transitioning from HIGH to LOW at this time, depending on tDQSS. 4. A maximum of eight AUTO REFRESH commands can be posted to any given DDR SDRAM device. 5. For command/address input slew rate 1.0 V/ns 6. For command/address input slew rate 0.5 V/ns and < 1.0 V/ns 7. For CK & CK slew rate 1.0 V/ns 8. These parameters guarantee device timing, but they are not necessarily tested on each device. They may be guaranteed by device design or tester correlation. 9. Slew Rate is measured between VOH(ac) and VOL(ac). 10. Min (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this value can be greater than the minimum specification limits for tCL and tCH).....For example, tCL and tCH are = 50% of the period, less the half period jitter (tJIT(HP)) of the clock source, and less the half period jitter due to crosstalk (tJIT(crosstalk)) into the clock traces. 11. tQH = tHP - tQHS, where: tHP = minimum half clock period for any given cycle and is defined by clock high or clock low (tCH, tCL). tQHS accounts for 1) The pulse duration distortion of on-chip clock circuits; and 2) The worst case push-out of DQS on one tansition followed by the worst case pull-in of DQ on the next transition, both of which are, separately, due to data pin skew and output pattern effects, and pchannel to n-channel variation of the output drivers. 12. tDQSQ Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers for any given cycle. 13. tDAL = (tWR/tCK) + (tRP/tCK) For each of the terms above, if not already an integer, round to the next highest integer. Example: For DDR266B at CL=2.5 and tCK=7.5ns tDAL = (15 ns / 7.5 ns) + (20 ns/ 7.5ns) = (2) + (3) tDAL = 5 clocks System Notes : a. Pullup slew rate is characteristized under the test conditions as shown in Figure 1. Test point Output 50 VSSQ Figure 1 : Pullup slew rate test load Rev. 1.1 October, 2004 DDR SDRAM 256Mb E-die (x4, x8) Pb-Free b. Pulldown slew rate is measured under the test conditions shown in Figure 2. DDR SDRAM VDDQ 50 Output Test point Figure 2 : Pulldown slew rate test load c. Pullup slew rate is measured between (VDDQ/2 - 320 mV +/- 250 mV) Pulldown slew rate is measured between (VDDQ/2 + 320 mV +/- 250 mV) Pullup and Pulldown slew rate conditions are to be met for any pattern of data, including all outputs switching and only one output switching. Example : For typical slew rate, DQ0 is switching For minmum slew rate, all DQ bits are switching from either high to low, or low to high. The remaining DQ bits remain the same as for previous state. d. Evaluation conditions Typical : 25 C (T Ambient), VDDQ = 2.5V, typical process Minimum : 70 C (T Ambient), VDDQ = 2.3V, slow - slow process Maximum : 0 C (T Ambient), VDDQ = 2.7V, fast - fast process e. The ratio of pullup slew rate to pulldown slew rate is specified for the same temperature and voltage, over the entire temperature and voltage range. For a given output, it represents the maximum difference between pullup and pulldown drivers due to process variation. f. Verified under typical conditions for qualification purposes. g. TSOPII package divices only. h. Only intended for operation up to 266 Mbps per pin. i. A derating factor will be used to increase tIS and tIH in the case where the input slew rate is below 0.5V/ns as shown in Table 2. The Input slew rate is based on the lesser of the slew rates detemined by either VIH(AC) to VIL(AC) or VIH(DC) to VIL(DC), similarly for rising transitions. j. A derating factor will be used to increase tDS and tDH in the case where DQ, DM, and DQS slew rates differ, as shown in Tables 3 & 4. Input slew rate is based on the larger of AC-AC delta rise, fall rate and DC-DC delta rise, Input slew rate is based on the lesser of the slew rates determined by either VIH(AC) to VIL(AC) or VIH(DC) to VIL(DC), similarly for rising transitions. The delta rise/fall rate is calculated as: {1/(Slew Rate1)} - {1/(Slew Rate2)} For example : If Slew Rate 1 is 0.5 V/ns and slew Rate 2 is 0.4 V/ns, then the delta rise, fall rate is - 0.5ns/V . Using the table given, this would result in the need for an increase in tDS and tDH of 100 ps. k. Table 3 is used to increase tDS and tDH in the case where the I/O slew rate is below 0.5 V/ns. The I/O slew rate is based on the lesser on the lesser of the AC - AC slew rate and the DC- DC slew rate. The inut slew rate is based on the lesser of the slew rates deter mined by either VIH(ac) to VIL(ac) or VIH(DC) to VIL(DC), and similarly for rising transitions. m. DQS, DM, and DQ input slew rate is specified to prevent double clocking of data and preserve setup and hold times. Signal transi tions through the DC region must be monotony. Rev. 1.1 October, 2004 DDR SDRAM 256Mb E-die (x4, x8) Pb-Free IBIS :I/V Characteristics for Input and Output Buffers DDR SDRAM Output Driver V-I Characteristics DDR SDRAM DDR SDRAM Output driver characteristics are defined for full and half strength operation as selected by the EMRS bit A1. Figures 3 and 4 show the driver characteristics graphically, and tables 8 and 9 show the same data in tabular format suitable for input into simulation tools. The driver characteristcs evaluation conditions are: Typical Minimum Maximum 25xC 70xC 0xC Vdd/Vddq = 2.5V, typical process Vdd/Vddq = 2.3V, slow-slow process Vdd/Vddq = 2.7V, fast-fast process Output Driver Characteristic Curves Notes: 1. The full variation in driver current from minimum to maximum process, temperature and voltage will lie within the outer bounding lines the of the V-I curve of Figure 3 and 4. 2. It is recommended that the "typical" IBIS V-I curve lie within the inner bounding lines of the V-I curves of Figure 3 and 4. 3. The full variation in the ratio of the "typical" IBIS pullup to "typical" IBIS pulldown current should be unity +/- 10%, for device drain to source voltages from 0.1 to1.0. This specification is a design objective only. It is not guaranteed. 160 Iout(mA) 140 120 100 80 60 40 20 0 0.0 0.5 1.0 1.5 2.0 2.5 Maximum Typical High Typical Low Minimum Pullup Characteristics for Full Strength Output Driver Vout(V) 0 .0 0 -20 -40 1 .0 2 .0 Iout(mA) -60 -80 -100 -120 -140 -160 -180 -200 -220 Minumum Typical Low Typical High Maximum Pulldown Characteristics for Full Strength Output Driver Vout(V) Figure 3. I/V characteristics for input/output buffers:Pull up(above) and pull down(below) Rev. 1.1 October, 2004 DDR SDRAM 256Mb E-die (x4, x8) Pb-Free DDR SDRAM Pulldown Current (mA) Voltage (V) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 pullup Current (mA) Maximum 9.6 18.2 26.0 33.9 41.8 49.4 56.8 63.2 69.9 76.3 82.5 88.3 93.8 99.1 103.8 108.4 112.1 115.9 119.6 123.3 126.5 129.5 132.4 135.0 137.3 139.2 140.8 Typical Low 6.0 12.2 18.1 24.1 29.8 34.6 39.4 43.7 47.5 51.3 54.1 56.2 57.9 59.3 60.1 60.5 61.0 61.5 62.0 62.5 62.9 63.3 63.8 64.1 64.6 64.8 65.0 Typical High 6.8 13.5 20.1 26.6 33.0 39.1 44.2 49.8 55.2 60.3 65.2 69.9 74.2 78.4 82.3 85.9 89.1 92.2 95.3 97.2 99.1 100.9 101.9 102.8 103.8 104.6 105.4 Minimum 4.6 9.2 13.8 18.4 23.0 27.7 32.2 36.8 39.6 42.6 44.8 46.2 47.1 47.4 47.7 48.0 48.4 48.9 49.1 49.4 49.6 49.8 49.9 50.0 50.2 50.4 50.5 Typical Low -6.1 -12.2 -18.1 -24.0 -29.8 -34.3 -38.1 -41.1 -41.8 -46.0 -47.8 -49.2 -50.0 -50.5 -50.7 -51.0 -51.1 -51.3 -51.5 -51.6 -51.8 -52.0 -52.2 -52.3 -52.5 -52.7 -52.8 Typical High -7.6 -14.5 -21.2 -27.7 -34.1 -40.5 -46.9 -53.1 -59.4 -65.5 -71.6 -77.6 -83.6 -89.7 -95.5 -101.3 -107.1 -112.4 -118.7 -124.0 -129.3 -134.6 -139.9 -145.2 -150.5 -155.3 -160.1 Minimum -4.6 -9.2 -13.8 -18.4 -23.0 -27.7 -32.2 -36.0 -38.2 -38.7 -39.0 -39.2 -39.4 -39.6 -39.9 -40.1 -40.2 -40.3 -40.4 -40.5 -40.6 -40.7 -40.8 -40.9 -41.0 -41.1 -41.2 Maximum -10.0 -20.0 -29.8 -38.8 -46.8 -54.4 -61.8 -69.5 -77.3 -85.2 -93.0 -100.6 -108.1 -115.5 -123.0 -130.4 -136.7 -144.2 -150.5 -156.9 -163.2 -169.6 -176.0 -181.3 -187.6 -192.9 -198.2 Table 7. Full Strength Driver Characteristics Rev. 1.1 October, 2004 DDR SDRAM 256Mb E-die (x4, x8) Pb-Free DDR SDRAM 90 80 70 60 50 Maximum Typical High Typical Low Minimum Iout(mA) Iout(mA) 40 30 20 10 0 0.0 1.0 2.0 Pullup Characteristics for Weak Output Driver Vout(V) 0.0 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 1.0 2.0 Iout(mA) Minumum Typical Low Typical High Maximum Pulldown Characteristics for Weak Output Driver Vout(V) Figure 4. I/V characteristics for input/output buffers:Pull up(above) and pull down(below) Rev. 1.1 October, 2004 DDR SDRAM 256Mb E-die (x4, x8) Pb-Free DDR SDRAM Pulldown Current (mA) Voltage (V) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 pullup Current (mA) Maximum 5.0 9.9 14.6 19.2 23.6 28.0 32.2 35.8 39.5 43.2 46.7 50.0 53.1 56.1 58.7 61.4 63.5 65.6 67.7 69.8 71.6 73.3 74.9 76.4 77.7 78.8 79.7 Typical Low 3.4 6.9 10.3 13.6 16.9 19.6 22.3 24.7 26.9 29.0 30.6 31.8 32.8 33.5 34.0 34.3 34.5 34.8 35.1 35.4 35.6 35.8 36.1 36.3 36.5 36.7 36.8 Typical High 3.8 7.6 11.4 15.1 18.7 22.1 25.0 28.2 31.3 34.1 36.9 39.5 42.0 44.4 46.6 48.6 50.5 52.2 53.9 55.0 56.1 57.1 57.7 58.2 58.7 59.2 59.6 Minimum 2.6 5.2 7.8 10.4 13.0 15.7 18.2 20.8 22.4 24.1 25.4 26.2 26.6 26.8 27.0 27.2 27.4 27.7 27.8 28.0 28.1 28.2 28.3 28.3 28.4 28.5 28.6 Typical Low -3.5 -6.9 -10.3 -13.6 -16.9 -19.4 -21.5 -23.3 -24.8 -26.0 -27.1 -27.8 -28.3 -28.6 -28.7 -28.9 -28.9 -29.0 -29.2 -29.2 -29.3 -29.5 -29.5 -29.6 -29.7 -29.8 -29.9 Typical High -4.3 -8.2 -12.0 -15.7 -19.3 -22.9 -26.5 -30.1 -33.6 -37.1 -40.3 -43.1 -45.8 -48.4 -50.7 -52.9 -55.0 -56.8 -58.7 -60.0 -61.2 -62.4 -63.1 -63.8 -64.4 -65.1 -65.8 Minimum -2.6 -5.2 -7.8 -10.4 -13.0 -15.7 -18.2 -20.4 -21.6 -21.9 -22.1 -22.2 -22.3 -22.4 -22.6 -22.7 -22.7 -22.8 -22.9 -22.9 -23.0 -23.0 -23.1 -23.2 -23.2 -23.3 -23.3 Maximum -5.0 -9.9 -14.6 -19.2 -23.6 -28.0 -32.2 -35.8 -39.5 -43.2 -46.7 -50.0 -53.1 -56.1 -58.7 -61.4 -63.5 -65.6 -67.7 -69.8 -71.6 -73.3 -74.9 -76.4 -77.7 -78.8 -79.7 Table 8. Weak Driver Characteristics Rev. 1.1 October, 2004 |
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