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High Voltage IGBT with Diode
Combi Pack Short Circuit SOA Capability
IXSX 35N120AU1
VCES = 1200 V IC25 = 70 A VCE(SAT) = 4V
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg TL Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TJ = 125C, RG = 22 W Clamped inductive load, L = 30 mH VGE = 15 V, VCE = 720 V, TJ = 125C RG = 22 W, non repetitive TC = 25C IGBT Diode
Maximum Ratings 1200 1200 20 30 70 35 140 ICM = 70 @ 0.8 VCES 10 300 190 -55 ... +150 150 -55 ... +150 V V V V A A A A ms W W C C C C g
PLUS TO-247TM (IXSX35N120AU1)
C (TAB) G G = Gate, E = Emitter, C E C = Collector, TAB = Collector
Features * Hole-less TO-247 package for clip mounting * High frequency IGBT and anti-parallel FRED in one package * Low VCE(sat) - for minimum on-state conduction losses * MOS Gate turn-on - drive simplicity * Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM Applications
1.6 mm (0.063 in) from case for 10 s TO-247 HL
300 6
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1200 4 TJ = 25C TJ = 125C 8 750 15 100 4 V V mA mA nA V
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 5 mA, VGE = 0 V = 4 mA, VCE = VGE
* * * * *
AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies
VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V
Advantages * Space savings (two devices in one package) * Reduces assembly time and cost * High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
97514D (7/00)
(c) 2000 IXYS All rights reserved
1-5
IXSX 35N120AU1
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 20 26 S PLUS247TM (IXSX)
gfs
IC
= IC90; VCE = 10 V,
Pulse test, t 300 ms, duty cycle 2 % IC(on) C ies Coes C res Qg Qge Qgc IC = IC90, VGE = 15 V, VCE = 0.5 VCES VCE = 25 V, VGE = 0 V, f = 1 MHz VGE = 15 V, VCE = 10 V 170 3900 295 60 150 40 70 Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = 2.7 W Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = 2.7 W Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 80 150 400 500 10 80 150 8 400 700 15 900 700 190 60 100 A pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ 0.42 K/W 0.15 K/W
Dim. Millimeter Min. Max. A 4.83 5.21 2.29 2.54 A1 A2 1.91 2.16 b 1.14 1.40 b1 1.91 2.13 b2 2.92 3.12 C 0.61 0.80 D 20.80 21.34 E 15.75 16.13 e 5.45 BSC L 19.81 20.32 L1 3.81 4.32 Q 5.59 6.20 R 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190
td(on)
t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff RthJC RthCK
Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 2.35 32 225 40 36 60 V A ns ns
IF = IC90, VGE = 0 V, Pulse test, t 300 ms, duty cycle d 2 %, TJ = 125C IF = IC90, VGE = 0 V, -diF/dt = 480 A/ms VR = 540 V TJ = 100C IF = 1 A; -di/dt = 200 A/ms; VR = 30 V TJ = 25C
0.65 K/W
(c) 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-5
IXSX 35N120AU1
Fig.1 Saturation Characteristics
70
TJ = 25C
Fig.2 Output Characterstics
13V 11V
VGE =15V
250
TJ = 25C VGE = 15V
60
200
IC - Amperes
IC - Amperes
50 40 30 20 10
7V 9V
13V
150 100 50 0
11V
9V 7V
0
0
1
2
3
4
5
0
2
4
6
8
10 12 14 16 18 20
VCE - Volts
VCE - Volts
Fig.3
10 9 8 7
Collector-Emitter Voltage vs. Gate-Emitter Voltage
TJ = 25C
Fig.4 Temperature Dependence of Output Saturation Voltage
1.4
VGE=15V
1.3
IC = 70A
VCE(sat) - Normalized
1.2 1.1 1.0 0.9 0.8
IC =1 7.5A IC = 35A
VCE - Volts
6 5 4 3 2 1 0 8 9 10 11 12 13 14 15
IC = 70A IC = 35A IC = 17.5A
0.7 -50
-25
0
25
50
75
100 125 150
VGE - Volts
TJ - Degrees C
Fig.5
50
Input Admittance
1.3
Fig.6 Temperature Dependence of Breakdown and Threshold Voltage
VCE = 10V
40
BV / VGE(th) - Normalized
1.2 1.1 1.0 0.9 0.8 0.7 -50
VGE(th) IC = 4mA
IC - Amperes
30 20
TJ = 125C
BVCES IC = 3mA
10 0
TJ = 25C TJ = - 40C
4
5
6
7
8
9
10 11 12 13 14 15
-25
0
25
50
75
100 125 150
VGE - Volts
TJ - Degrees C
(c) 2000 IXYS All rights reserved
3-5
IXSX 35N120AU1
Fig.7 Turn-Off Energy per Pulse and Fall Time on Collector Current
25
Fig.8 Dependence of Turn-Off Energy Per Pulse and Fall Time on RG
1250
TJ = 125C IC = 35A
1250
TJ = 125C R G = 10
18
tfi - nanoseconds
tfi - nanoseconds
1000
tfi
20
1000
tfi
17
Eoff - millijoules
750
15
750
16
500
E off
10
500
E off
15
250
0
10
20
30
40
50
60
5 70
250
0
10
20
30
40
14 50
IC - Amperes
R G - Ohms
Fig.9
15 12
Gate Charge Characteristic Curve
Fig.10 Turn-Off Safe Operating Area
100
IC = 35A VCE = 500V
10
TJ = 125C R G = 2.7 dV/dt < 5V/ns
9 6 3 0 0 50 100 150 200
IC - Amperes
VGE- Volts
1
0.1
0.01 0 200 400 600 800 1000 1200
QG - nanocoulombs
VCE - Volts
Fig.11 Transient Thermal Impedance
1
D=0.5
ZthjJC - K/W
0.1 D=0.2
D=0.1 D=0.05 D=0.02 D = Duty Cycle
0.01 D=0.01
Single Pulse
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
(c) 2000 IXYS All rights reserved
4-5
Eoff - millijoules
IXSX 35N120AU1
Fig.12 Maximum Forward Voltage Drop
90 80 60 50
TJ = 125C IF = 60A VFR
Fig.13 Peak Forward Voltage VFR and Forward Recovery Time tFR
1200 1000 800 600 400
Current - Amperes
50 40 30 20 10 0 0 1 2 3
TJ = 25C TJ = 100C TJ = 150C
VFR - Volts
60
40 30 20 10 0 0 200 400 600 800
tfr
200 0 1000
Voltage Drop - Volts
diF /dt - A/s
Fig.14 Junction Temperature Dependence off IRM and Qr
1.4 1.2 12 10
Fig.15 Reverse Recovery Chargee
TJ = 100C VR = 540V
max. IF = 60A
Normalized IRM / Qr
coulombs
1.0
IRM
8 6 4 2 0 10
typ. IF = 120A IF = 60A IF = 30A
0.8 0.6 0.4 0.2 0.0 0 40 80 120 160
Qr
Qr -
m
100
1000
TJ - Degrees C
diF /dt - A/s
Fig.16 Peak Reverse Recovery Current
80
TJ = 100C VR = 540V max. IF = 60A
Fig.17 Reverse Recovery Time
1.0
max. IF = 60A TJ = 100C VR = 540V typ. IF = 120A IF = 60A IF = 30A
60
0.8
IRM - Amperes
trr - seconds
0.6 0.4 0.2 0.0
40
20
typ. IF = 120A IF = 60A IF = 30A
m
0 200 400 600 800 1000
0
200
400
600
800
1000
diF /dt - A/s
diF /dt - A/s
(c) 2000 IXYS All rights reserved
5-5
tfr - nanoseconds
70

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