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| High Voltage IGBT with Diode Short Circuit SOA Capability IXSN 55N120AU1 VCES = 1200 V IC25 = 110 A VCE(sat) = 4V 3 2 Preliminary data 4 1 Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC PD VISOL TJ TJM Tstg Md Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 22 W Clamped inductive load, L = 30 mH VGE = 15 V, VCE = 0.6 * VCES, TJ = 125C RG = 22 W, non repetitive TC = 25C 50/60 Hz IISOL 1 mA IGBT Diode t = 1 min t=1s Maximum Ratings 1200 1200 20 30 110 55 160 ICM = 110 @ 0.8 VCES 10 V A miniBLOC, SOT-227 B 1 2 V V A A A A ms Features 4 3 500 175 2500 3000 -55 ... +150 150 -55 ... +150 W W V~ V~ C C C Nm/lb.in. Nm/lb.in. Mounting torque Terminal connection torque (M4) 1.5/13 1.5/13 * International standard package miniBLOC (ISOTOP) compatible * Aluminium-nitride isolation - high power dissipation * Isolation voltage 3000 V~ * Low VCE(sat) - for minimum on-state conduction losses * Fast Recovery Epitaxial Diode - short trr and IRM * Low collector-to-case capacitance (< 60 pF) - reduces RFI * Low package inductance (< 10 nH) - easy to drive and to protect Applications * * * * * AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1200 4 TJ = 25C TJ = 125C V V mA mA nA V BVCES VGE(th) ICES IGES VCE(sat) IC IC = 8 mA, VGE = 0 V = 8 mA, VCE = VGE 8 1 16 200 4 VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V Advantages * Space savings * Easy to mount with 2 screws * High power density 92520E(12/96) IXYS reserves the right to change limits, test conditions, and dimensions. (c) 2000 IXYS All rights reserved 1-2 IXSN 55N120AU1 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 32 45 340 8000 VCE = 25 V, VGE = 0 V, f = 1 MHz 590 90 300 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC90, VGE = 15 V, VCE = 0.8 * VCES, RG = 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 80 140 140 220 400 700 18 140 Inductive load, TJ = 125C IC = IC90, VGE = 15 V, VCE = 0.8 * VCES, RG = 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 250 600 900 950 6 25 1000 S A pF pF pF nC nC nC ns ns ns ns mJ ns ns ns ns ns mJ mJ 0.25 K/W 0.05 K/W M4 screws (4x) supplied Dim. A B C D E F G H J K L M N O P Q R S T U Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 miniBLOC, SOT-227 B gfs IC(on) C ies Coes C res Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri td(off) tfi tc Eon Eoff RthJC RthCK IC = IC90; VCE = 10 V, Pulse test, t 300 ms, duty cycle d 2 % VCE = 10 V, VGE = 15 V Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 2.55 32 300 40 36 60 V A ns ns IF = IC90, VGE = 0 V, Pulse test, t 300 ms, duty cycle d 2 % IF = IC90, VGE = 0 V, -diF/dt = 480 A/ms VR = 540 V TJ = 100C IF = 1 A; -di/dt = 200 A/ms; VR = 30 V TJ = 25C 0.71 K/W (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2 |
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