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| HiPerFETTM Power MOSFET Single Die MOSFET Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md VISOL Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C Continuous Transient IXFK 55N50 IXFX 55N50 IXFN 55N50 VDSS ID25 RDS(on) t rr = 500 V = 55 A = 90m 250 ns Maximum Ratings 500 500 20 30 55 220 55 60 10 625 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns PLUS247(IXFX) G (TAB) C E TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS TJ 150C, RG = 4 TC = 25C TO-264 AA (IXFK) G W C C C C D D (TAB) S miniBLOC, SOT-227 B (IXFN) E153432 S G 1.6 mm (0.062 in.) from case for 10 s (IXFK, IXFX) Mounting torque Terminal leads 50/60 Hz, RMS IISOL 1 mA PLUS247 TO-264 SOT-227B (IXFK, IXFX) (IXFN) (IXFN) t = 1minute t=1s 300 1.13/10 Nm/lb.in. 1.13/10 Nm/lb.in. 2500 3000 5 10 30 V~ V~ g g g G = Gate S = Source D = Drain TAB = Drain D S Either Source terminal at miniBLOC can be used as Main or Kelvin Source Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1 mA VDS = VGS, ID = 8 mA VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125C Characteristic Values Min. Typ. Max. 500 2.5 4.5 200 25 2 90 V V nA A mA m Features * International standard packages * Encapsulating epoxy meets UL 94 V-0, flammability classification * miniBLOC with Aluminium nitride isolation * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated * Low package inductance * Fast intrinsic Rectifier Advantages * PLUS247 package for clip or spring bar mounting * Easy to mount * Space savings * High power density DS97502G(11/04) VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % (c) 2004 IXYS All rights reserved IXFK55N50 Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK RthCK IXFK, IXFX 0.15 0.05 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External), VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 10 V; ID = 0.5 * ID25 Note 1 Characteristic Values Min. Typ. Max. 45 9400 1280 460 45 60 120 45 330 55 155 0.20 S pF pF pF ns ns ns ns nC nC nC K/W K/W K/W Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T IXFX55N50 IXFN55N50 TO-264 AA Outline Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. Source-Drain Diode (TJ = 25C, unless otherwise specified) Symbol Test Conditions IS ISM VSD t rr QRM IRM Notes: 1. Pulse test, t 300 s, duty cycle d 2 % PLUS247 Outline IF = 25 A, -di/dt = 100 A/s, VR = 100 V VGS = 0 Repetitive; pulse width limited by TJM IF = 100 A, VGS = 0 V Note 1 Characteristic Values Min. Typ. Max. 55 220 A A .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 miniBLOC (SOT-227B) Outline 1.5 250 1.0 10 V ns C A M4 screws (4x) supplied Dim. A B C D E F G H J K L M N O P Q Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 Max. 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 Terminals: 1 - Gate 2 - Collector R S T U IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 IXFK55N50 IXFX55N50 IXFN55N50 140 120 Figure 1. Output Characteristics at 25OC TJ = 25OC VGS = 10V 9V 8V 7V 6V Figure 2. Output Characteristics at 125OC 100 TJ = 125OC VGS = 10V 9V 8V 7V 6V 80 ID - Amperes ID - Amperes 100 80 60 40 20 0 60 5V 40 20 0 5V 0 4 8 12 16 20 24 0 4 8 12 16 20 24 VDS - Volts VDS - Volts Figure 3. 2.8 VGS = 10V RDS(on) normalized to 0.5 ID25 value vs. ID 2.2 2.0 1.8 1.6 1.4 Figure 4. RDS(on) normalized to 0.5 ID25 value vs. TJ VGS = 10V RDS(ON) - Normalized 2.0 1.6 TJ = 125OC RDS(ON) - Normalized 2.4 ID = 55A TJ = 25OC 1.2 0.8 ID = 27.5A 1.2 1.0 25 0 20 40 60 80 100 120 50 75 100 125 150 ID - Amperes TJ - Degrees C 60 50 Figure 5. Drain Current vs. Case Temperature 100 IXF_55N50 Figure 6. Admittance Curves 80 ID - Amperes IXF_50N50 ID - Amperes 40 30 20 10 0 TJ = 125oC 60 40 20 0 3.0 TJ = 25oC -50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 5.5 6.0 TC - Degrees C (c) 2004 IXYS All rights reserved VGS - Volts IXFK55N50 Figure 7. Gate Charge 12 10 VDS = 250V ID = 27.5A IXFX55N50 IXFN55N50 Figure 8. Capacitance Curves 10000 Ciss f = 1MHz Capacitance - pF VGS - Volts 8 6 4 2 0 Coss 1000 Crss 0 50 100 150 200 250 300 350 100 0 5 10 15 20 25 30 35 40 Gate Charge - nC VDS - Volts Figure 9. 100 80 Forward Voltage Drop of the Intrinsic Diode ID - Amperes 60 40 TJ = 125OC 20 TJ = 25OC 0 0.2 0.4 0.6 0.8 1.0 VSD - Volts Figure 10. Transient Thermal Resistance 1.00 IXFK55N50/IXFX55N50 R(th)JC - K/W 0.10 IXFN55N50 0.01 0.00 10-4 10-3 10-2 10-1 100 101 Pulse Width - Seconds |
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