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| PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated IXFH 18N60P IXFV 18N60P IXFV 18N60PS VDSS ID25 RDS(on) trr = = 600 V 18 A 400 m 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Tranisent TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 5 TC = 25C Maximum Ratings 600 600 30 40 18 45 18 30 1.0 10 360 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W C C C C C TO-247 AD (IXFH) D (TAB) PLUS220 (IXFV) G D S D (TAB) PLUS220SMD (IXFV...S) 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-247) 300 260 1.13/10 Nm/lb.in. 6 4 g g G = Gate S = Source G S D (TAB) TO-247 PLUS220 & PLUS220SMD D = Drain TAB = Drain Symbol Test Conditions (TJ = 25C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 2.5 mA VGS = 30 V, VDS = 0 V VDS = VDSS VGS = 0 V TJ = 125C Characteristic Values Min. Typ. Max. 600 3.0 5.5 100 25 250 400 V V Features l l l nA A A m International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % Easy to mount Space savings High power density DS99390E(03/06) (c) 2006 IXYS All rights reserved IXFH 18N60P IXFV 18N60P IXFV 18N60PS Symbol Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) Min. Typ. Max. 9 16 2500 VGS = 0 V, VDS = 25 V, f = 1 MHz 280 23 21 VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 RG = 5 (External) 22 62 22 50 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 15 18 0.35 (TO-247, PLUS220) 0.21 S pF pF pF ns ns ns ns Dim. Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain 1 2 3 TO-247 (IXFH) Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS VDS = 20 V; ID = 0.5 ID25, Note 1 nC nC nC C/W C/W Source-Drain Diode Symbol IS ISM VSD trr QRM FRM Test Conditions VGS = 0 V Repetitive IF = IS, VGS = 0 V, Note 1 IS = 18 A, -di/dt = 100 A/s VR = 100 V, VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 18 54 1.5 200 0.8 5 A A V ns C A Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC PLUS220 (IXFV) Outline Note 1: Pulse test, t 300 s, duty cycled 2 % PLUS220SMD (IXFV_S) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFH 18N60P IXFV 18N60P IXFV 18N60PS Fig. 1. Output Characteristics @ 25C 18 16 14 V GS = 10V 8V 7V 40 35 30 V GS = 10V 8V Fig. 2. Extended Output Characteristics @ 25C I D - Amperes I D - Amperes 12 6V 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 5V 25 20 7V 6V 15 10 5 5V 0 0 3 6 9 12 15 18 21 24 27 30 V DS - Volts V DS - Volts Fig. 3. Output Characteristics @ 125C 18 16 14 V GS = 10V 7V 3.2 Fig. 4. R DS(on) Normalized to ID = 9A Value vs. Junction Temperature V GS = 10V 2.8 R DS(on) - Normalized 2.4 I D = 18A I D - Amperes 12 10 8 6 4 2 0 0 2 4 6 8 10 6V 2 1.6 I D = 9A 5V 1.2 0.8 0.4 12 14 16 18 -50 -25 0 25 50 75 100 125 150 V DS - Volts T J - Degrees Centigrade Fig. 5. R DS(on) Normalized to ID = 9A Value vs. Drain Current 3.2 3 2.8 V GS = 10V TJ = 125C 20 18 16 14 Fig. 6. Maximum Drain Current v s. Case Temperature R DS(on) - Normalized 2.6 I D - Amperes TJ = 25C 0 5 10 15 20 25 30 35 40 45 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 12 10 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150 I D - Amperes T C - Degrees Centigrade (c) 2006 IXYS All rights reserved IXFH 18N60P IXFV 18N60P IXFV 18N60PS Fig. 7. Input Admittance 40 24 35 30 25 20 15 10 5 0 3.5 4 4.5 5 5.5 6 6.5 7 TJ = 125C 25C - 40C 20 TJ = - 40C 25C 125C Fig. 8. Transconductance g f s - Siemens I D - Amperes 16 12 8 4 0 0 5 10 15 20 25 30 35 40 V GS - Volts I D - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 70 60 8 50 7 10 9 V DS = 300V I D = 9A I G = 10mA Fig. 10. Gate Charge I S - Amperes V GS - Volts TJ = 25C 0.9 1 1.1 40 TJ = 125C 30 20 6 5 4 3 2 10 1 0 0.3 0.4 0.5 0.6 0.7 0.8 0 0 5 10 15 20 25 30 35 40 45 50 V SD - Volts Q G - NanoCoulombs Fig. 11. Capacitance 10,000 f = 1 MHz C iss 100 Fig. 12. Forward-Bias Safe Operating Area Capacitance - PicoFarads RDS(on) Limits 25s C oss I D - Amperes 1,000 100s 10 1ms 10ms 100 C rss TJ = 150C TC = 25C DC 10 0 5 10 15 20 25 30 35 40 1 10 100 1000 V DS - Volts V DS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. IXFH 18N60P IXFV 18N60P IXFV 18N60PS Fig. 13. Maximum Transient Thermal Resistance 1.000 R (th)JC - C / W 0.100 0.010 0.0001 0.001 0.01 0.1 1 10 Pulse W idth - Seconds (c) 2006 IXYS All rights reserved |
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