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| IS456 IS456 s Features 1. High speed response ( t PHL : TYP.230ns ) 2. Uses a pattern to allow for possible positional deviation of the semiconductor laser spot. 3. Compact, mini-flat package High Speed Response Type OPIC Light Detector s Outline Dimensions 0.4 - 0.3 0.1 2.5 0.2 + ( Unit : mm ) 3.81 0.3 0.1 1 Detector center 2 2.75 0.2 4.4 0.1 0.25 0.7 4 3 s Applications 1. Laser beam printers s Absolute Maximum Ratings Parameter *1 Supply voltage High level output voltage Low level output current Operating temperature Storage temperature *2 Soldering temperature Power dissipation RO terminal power dissipation *3 Incident light intensity *3 Radiant intensity Symbol V CC V OH IOL Topr Tstg Tsol P P RO PI Ee ( Ta= 25C) Rating - 0.5 to + 7 7 20 - 25 to + 80 - 40 to + 85 260 150 24 5 60 Unit V V mA C C C mW mW mW WB ( R0.2 ) 2.7 - + 0.5 0 2.7 0.1 + 0.5 0 5.0 0.1 1.5 4.4 0.5 - 0.3 0.2 1.07 5.0 0.1 10 10 0.15 - 0.3 0 Internal connection diagram + 0.8 - 0.2 0.4 + + 10 10 4 Gain resistor (Ro) ( Outer mounting ) 1 1 2 3 4 RO VO GND V CC *1 For 1 minute *2 For 3 seconds at the position shown in the following drawing. *3 Maximum allowable incident light intensity and radiant intensity of laser beam ( = 780nm ) to the device. Soldering area Soldering area VREF 2 3 *" OPIC" ( Optical IC ) is a trademark of the SHARP Corporation. An OPIC consists of a light-detecting element and signalprocessing circuit integrated onto a single chip. s Electro-optical Characteristics Parameter High level output voltage Low level output voltage High level supply current Low level supply current *4 " HighLow " threshold illuminance 1 *4 " HighLow " threshold illuminance 2 " HighLow " threshold incident light intensity " HighLow" propagation delay time ( VCC = 5V, Ta= 25C ) Symbol V OH V OL ICCH ICCL E VHL1 E VHL2 P IHL t PHL t PLH tr tf CL =15pF, Duty=1: 1 P I=0.2mW, =780nm RO=5.1k , R L=510 Conditions RO=51k , E V=0 IOL=10mA, E V =1 000lx RO=51k , E V=0 RO=51k , E V =1 000lx RO=51k RO=5.1k RO=5.1k , l =780nm MIN. 4.9 330 TYP. 0.4 2.6 3.8 470 5 800 100 230 230 60 20 MAX. 0.6 4.5 6.6 600 400 400 200 100 Unit V V mA mA lx lx W ns ns ns ns Response time " LowHigh" propagation delay time Rise time Fall time *4 E VHL 1, E VHL 2 represent illuminance by CIE standard light source A( tungsten lamp ) when output goes from high to low. " In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device." IS456 s Recommended Operating Conditions Parameter Operating supply voltage Operating temperature Incident light intentity ( = 780nm ) Symbol V cc T opr PI MIN. 4.5 0 MAX. 5.5 60 2.5 Unit V C mW In order to stabilize power supply line, connect a by-pass capacitor of 0.1 F between Vcc and GND near the device. Fig. 1 Total Power Dissipation vs. Ambient Temperature 250 Fig. 2 Low Level Output Voltage vs. Low Level Output Current 10 5 Low level output voltage V OL ( V ) V CC = 5V T a = 25C Total power dissipation P ( mW ) 200 2 1 0.5 150 100 50 0.2 0 - 25 1 0 25 50 75 100 1 2 5 10 20 50 100 Ambient temperature T a ( C ) Low level output Current I OL ( mA ) Fig. 3 Low Level Output Voltage vs. Ambient Temperature 0.6 V CC = 5V 0.5 Low level output voltage VOL ( mA ) IOL= 20mA 10mA 0.4 Fig. 4 Supply Current vs. Supply Voltage 6 T a = 25C 5 Supply current I CC ( mA ) ICCL 4 ICCH 0.3 3 0.2 2 0.1 1 0 - 25 0 0 25 50 75 100 3 4 5 6 7 8 Ambient temperature Ta ( C ) Supply voltage V CC ( V ) IS456 Fig. 5 Supply Current vs. Ambient Temperature 6 V CC = 5.0V " HighLow" threshold incident light intensity P IHL ( W ) Fig. 6 " High Low " Threshold Incident Light Intensity vs. Gain Resistanse 2000 1000 500 200 100 50 20 10 0 V CC = 5V T a = 25C Supply current I CC ( mA ) 4 I CCL 2 I CCH 0 - 25 0 25 50 75 100 Ambient temperature T a ( C ) 1 2 3 4 5 6 7 Gain resistance R O ( k ) Fig. 7 " High Low " Threshold Incident Light Intensity vs. Ambient Temperature 140 " HighLow" threshold incident light intensity P IHL ( W ) V CC = 5.0V R O = 5.1k Fig. 8 "High Low " Threshold Incident Light Intensity vs. Supply Voltage 200 T a = 25C R O = 5.1k " HighLow" threshold incident light intensity P IHL ( W ) 150 120 100 100 50 80 0 - 25 0 25 50 75 80 0 3 4 5 6 7 8 Ambient temperature T a ( C ) Supply voltage V CC ( V) Fig. 9 Propagation Delay Time vs. Incident Light Intensity 250 V CC = 5.0V R L= 510 T a = 25C RO : Dotted line Fig.10 Propagation Delay Time vs. Gain Resistance 500 ( ns ) VCC = 5V, P I = 0.6mW RL= 510k , T a = 25C 400 t PLH ( ns ) 200 PHL ,t PLH PLH 150 t PHL 100 t PLH ,t 300 Propagation delay time t 200 Propagation delay time t PHL 50 RO 100 t PHL 0 0 0.2 0.5 1.0 1.5 2.0 2.5 0 0 1 Incident light intensity P I ( mW ) 2 3 4 Gain resistance R O ( k) 5 6 IS456 Fig.11 Propagation Delay Time vs. Ambient Temperature 400 ( ns ) V CC = 5V, R O = 5.1K R L = 510 t PLH Rise time, fall time t r , t f ( ns ) 300 250 Fig.12 Rise Time, Fall Time vs. Load Resistance 300 T a = 25C V CC = 5V tr 200 Propagation delay time t PLH , t PHL t PHL 200 t PLH t PHL 150 100 100 50 tf 0 0 0 - 25 0 25 50 75 100 1 2 3 4 5 6 Ambient temperature Ta ( C ) Load resistance R L ( K ) Fig.13 Rise Time, Fall Time vs. Ambient Temperature 100 V CC = 5V, R O = 5.1K RL = 510 80 Rise time, fall time t r , t f ( ns ) Fig.14 Spectral Sensitivity 100 T a = 25C 80 Relative sensitivity ( % ) tr 60 60 40 tf 20 40 20 0 - 25 0 25 50 75 100 0 300 400 500 600 700 800 900 1000 1100 Ambient temperature Ta ( C ) Wavelength ( nm ) IS456 Test Circuit for Response Time Constant current 5.1 k Laser diode Vref 0.1 F Output CL VCC = 5V 510 0.2mW 0.1mW Incident light intensity 0mW tPHL tPLH 90% Output tf tr 1.5V 10% q Please refer to the chapter "Precautions for Use." |
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