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PD - 96898
RADIATION HARDENED IRHYK57133CMSE POWER MOSFET 130V, N-CHANNEL SURFACE MOUNT (Low-Ohmic TO-257AA) 5 TECHNOLOGY

Product Summary
Part Number Radiation Level IRHYK57133CMSE 100K Rads (Si) RDS(on) 0.082 ID 20A
Low-Ohmic TO-257AA
International Rectifier's R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n n n
Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Electrically Isolated Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C ID@ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Pack. Mounting Surface Temp. Weight For footnotes refer to the last page 20 12.5 80 75 0.6 20 73 20 7.5 11.3 -55 to 150 300 (for 5s) 3.7 (Typical)
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
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10/28/04
IRHYK57133CMSE
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS /TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
130 -- -- 2.5 7.4 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.09 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.8 -- -- 0.082 4.5 -- 10 25 100 -100 48 16 18 20 100 35 40 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 12.5A A V DS = VGS, ID = 1.0mA VDS = 15V, IDS = 12.5A A VDS = 104V ,VGS=0V VDS = 104V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 20A VDS = 65V VDD = 65V, ID = 20A VGS =12V, RG = 7.5
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
nH
Ciss Coss Crss Rg
Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Gate Resistance
-- -- -- --
1020 285 10 0.77
-- -- -- --
pF
Measured from Drain lead (6mm / 0.25in. from package) to Source lead (6mm /0.25in. from package) VGS = 0V, VDS = 25V f = 1.0MHz f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 20 80 1.2 200 1.5
Test Conditions
A
V ns C Tj = 25C, IS = 20A, VGS = 0V A Tj = 25C, IF = 20A, di/dt 100A/s VDD 25V A
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthJA Junction-to-Case Junction-to-Ambient
Min Typ Max
-- -- -- -- 1.67 80
Units
C/W
Test Conditions
Typical Socket Mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHYK57133CMSE
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation AA
Parameter
BVDSS V GS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (Low-Ohmic TO-257) Diode Forward Voltage
Min
130 2.0 -- -- -- -- -- --
100K Rads (Si)
Max
-- 4.5 100 -100 10 0.082 0.082 1.2
Units
V nA A V
Test Conditions
VGS = 0V, ID = 1.0mA VGS = VDS , ID = 1.0mA VGS = 20V VGS = -20V VDS = 104V, VGS= 0V VGS = 12V, ID = 12.5A VGS = 12V, ID = 12.5A VGS = 0V, ID = 20A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion Br I Au LET MeV/(mg/cm2)) 36.7 59.8 82.3 Energy (MeV) 309 341 350 VDS (V) Range (m) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 39.5 130 130 130 130 130 32.5 130 130 130 100 50 28.4 130 120 30 -- --
150 120 VDS 90 60 30 0 0 -5 -10 VGS -15 -20 Br I Au
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHYK57133CMSE
Pre-Irradiation
100
ID, Drain-to-Source Current (A)
10
ID, Drain-to-Source Current (A)
VGS TOP 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V
100
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
10
1
1
5.0V
0.1 5.0V 60s PULSE WIDTH Tj = 25C 0.01 0.1 1 10 100 1000 VDS, Drain-to-Source Voltage (V)
60s PULSE WIDTH Tj = 150C 0.1 0.1 1 10 100 1000 VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100 T J = 150C 10 T J = 25C 1
3.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 20A
2.5
ID, Drain-to-Source Current (A)
2.0
1.5
1.0
0.1 VDS = 50V 15 60s PULSE WIDTH 5 6 7 8 9 10 11 12 13
0.5
VGS = 12V
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
0.01
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHYK57133CMSE
2400
2000
VGS, Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHz C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
20 ID = 20A 16 VDS = 104V VDS = 65V VDS = 26V
C, Capacitance (pF)
1600
12
1200
Ciss Coss
8
800
400
4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 5 10 15 20 25 30 35 40
Crss
0 1 10 100
VDS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
TJ = 150C
T J = 25C
10
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
100s 1ms
Tc = 25C Tj = 150C Single Pulse 1 10 100
1
VGS = 0V 1.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VSD , Source-to-Drain Voltage (V)
10ms
0.1
1000
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRHYK57133CMSE
Pre-Irradiation
20
VGS
VDS
RD
ID, Drain Current (A)
15
RG VGS
D.U.T.
+
-V DD
10
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
5
VDS 90%
0 25 50 75 100 125 150
10% VGS
td(on) tr t d(off) tf
T C , Case Temperature (C)
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
10
Thermal Response ( Z thJC )
1
D = 0.50 0.20 0.10
0.1
0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE )
P DM t1 t2
0.01
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHYK57133CMSE
140
EAS , Single Pulse Avalanche Energy (mJ)
15V
120 100 80 60 40 20 0 25 50 75
VDS
L
DRIVER
ID 8.9A 12.6A BOTTOM 20A TOP
RG
D.U.T.
IAS tp
+ - VDD
VGS 20V
A
0.01
Fig 12a. Unclamped Inductive Test Circuit
100
125
150
V(BR)DSS tp
Starting T J , Junction Temperature (C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS
QGD
VGS
3mA
D.U.T.
+ V - DS
VG
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRHYK57133CMSE
Pre-Irradiation
A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias.
Footnotes:
A Repetitive Rating; Pulse width limited by
maximum junction temperature. A VDD = 50V, starting TJ = 25C, L= 0.36 mH Peak IL = 20A, VGS = 12V A ISD 20A, di/dt 690A/s, VDD 130V, TJ 150C 12 volt V GS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. 104 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- Low Ohmic TO-257AA
0.13 [.005] A 10.66 [.420] 10.42 [.410] 5.08 [.200] 4.83 [.190]
C 1 2 3
10.92 [.430] 10.42 [.410]
B 15.49 [.610] 14.73 [.580]
0.889 [.035] MAX. 2.54 [.100] 2X 3X 0.88 [.035] 0.64 [.025] BA
2.79 [.110] 2.29 [.090]
3.17 [.125] 2.92 [.115]
0.25 [.010]
NOT ES : 1. 2. 3. 4. DIMENS IONING & T OLERANCING PER ANS I Y14.5M-1994. CONT ROLLING DIMENS ION: INCH. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. OUT LINE CONFORMS T O JEDEC OUT LINE T O-257AA.
PIN ASSIGNMENTS 1 = DRAIN 2 = SOURCE 3 = GATE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 10/2004
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