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PD - 95813
RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB)
Product Summary
Part Number Radiation Level RDS(on) IRHLUB770Z4 100K Rads (Si) 0.55 IRHLUB730Z4 300K Rads (Si) 0.55 IRHLUB740Z4 600K Rads (Si) 0.55 IRHLUB780Z4 1000K Rads (Si) 0.55 ID 0.8A 0.8A 0.8A 0.8A
IRHLUB770Z4 60V, N-CHANNEL
c
TECHNOLOGY
UB
International Rectifier's R7 TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. These devices are used in applications such as current boost low signal source in PWM, voltage comparator and operational amplifiers.
Features:
n n n n n n n n n
5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Complimentary P-Channel Available IRHLUB7970Z4
Absolute Maximum Ratings
Parameter
ID @ VGS = 4.5V, TC = 25C ID @ VGS = 4.5V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight 0.8 0.5 3.2 0.6 0.0045 10 2.0 0.8 0.06 4.0 -55 to 150 300 (for 5s) 43 (Typical)
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
mg
For footnotes refer to the last page
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1
02/02/04
IRHLUB770Z4
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage
Min
60
Typ Max Units
-- 0.07 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 8.4 -- -- 0.55 2.0 -- 1.0 10 100 -100 3.6 1.5 1.8 8.0 10 26 10 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 250A Reference to 25C, ID = 1.0mA VGS = 4.5V, ID = 0.5A
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
-- -- -- -- -- -- -- -- -- --
nA nC
ns
nH
Ciss C oss C rss Rg
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
-- -- -- --
166 42 3.5 12
-- -- -- --
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 0.8 3.2 1.2 70 75
A
V ns nC Tj = 25C, IS = 0.8A, VGS = 0V Tj = 25C, IF = 0.8A, di/dt 100A/s VDD 25V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJA Junction-to-Case
Min Typ Max Units
-- -- 220
C/W
Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page
2
BV DSS /T J Temperature Coefficient of Breakdown -- Voltage RDS(on) Static Drain-to-Source On-State -- Resistance VGS(th) Gate Threshold Voltage 1.0 g fs Forward Transconductance 0.23 IDSS Zero Gate Voltage Drain Current -- --
VDS = VGS, ID = 250A VDS = 10V, IDS = 0.5A VDS= 48V ,VGS= 0V VDS = 48V, VGS = 0V, TJ =125C VGS = 10V VGS = -10V VGS = 4.5V, ID = 0.8A VDS = 30V VDD = 30V, ID = 0.8A, VGS = 4.5V, RG = 24
Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz f = 5.0MHz, open drain
Test Conditions
Test Conditions
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Radiation Characteristics Pre-Irradiation
IRHLUB770Z4
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-39) Static Drain-to-Source On-State Resistance (UB) Diode Forward Voltage
Up to 600K Rads(Si)1 1000K Rads(Si)2 Units
Test Conditions
VGS = 0V, ID = 250A VGS = VDS, ID = 250A VGS = 10V VGS = -10 V VDS= 48V, VGS =0V VGS = 4.5V, ID = 0.5A VGS = 4.5V, ID = 0.5A VGS = 0V, IS = 0.8A
Min 60 1.0 -- -- -- -- -- --
Max -- 2.0 100 -100 1.0 0.55 0.55 1.2
Min 60 1.0 -- -- -- -- -- --
Max -- 2.0 100 -100 10 0.55 0.55 1.2 V nA A V
1. Part numbers IRHLUB770Z4, IRHLUB730Z4, IRHLUB740Z4 2. Part number IRHLUB780Z4
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion LET
(MeV/(mg/cm2)) Br I Au 37.3 59.9 82.3
Energy
(MeV) 285 345 357
Range
(m) 36.8 32.7 28.5 0V 60 60 60 -2V 60 60 60 -4V 60 60 60 -5V 60 60 60
VDS (V)
@VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
-6V 60 60 -
-7V 35 20 -
-8V 30 15 -
-10V 20 -
70 60 50 40 30 20 10 0 0 -2 -4 -6 VGS -8 -10 -12
Br I Au
For footnotes refer to the last page
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VDS
Fig a. Single Event Effect, Safe Operating Area
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IRHLUB770Z4
Pre-Irradiation
10
ID, Drain-to-Source Current (A)
1
ID, Drain-to-Source Current (A)
VGS 15V 10V 5.0V 3.5V 3.0V 2.5V 2.25V BOTTOM 2.0V TOP
10
VGS 15V 10V 5.0V 3.5V 3.0V 2.5V 2.25V BOTTOM 2.0V TOP
1
0.1
2.0V
2.0V 60s PULSE WIDTH Tj = 150C 0.1 0.1 1 10 100
60s PULSE WIDTH Tj = 25C 0.1 1 10 100
0.01 VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
2.0
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = 0.8A
ID, Drain-to-Source Current (A)
1.5
T J = 150C 1 T J = 25C
1.0
0.5
0.1 1.5 2
VDS = 25V 15 60s PULSE WIDTH 2.5 3 3.5
0.0 -60 -40 -20
VGS = 4.5V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
4
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Pre-Irradiation
IRHLUB770Z4
250
VGS , Gate-to-Source Voltage (V)
200
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
12
ID = 0.8A
10
VDS = 48V VDS = 30V VDS = 12V
C, Capacitance (pF)
Ciss
8
150
C oss
100
6
4
50
2
C rss
0 1 10 100 0 0 1 2
FOR TEST CIRCUIT SEE FIGURE 13
4 5 6
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
10
10
ISD , Reverse Drain Current (A)
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
1
1
TJ = 150C
T J = 25C
100s
0.1 Tc = 25C Tj = 150C Single Pulse 1 10
1ms
10ms
0.1 0.4 0.6 0.8 1.0 1.2
VGS = 0V 1.4 1.6
0.01
100
1000
VSD , Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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5
IRHLUB770Z4
Pre-Irradiation
1.0
VDS VGS
RD
0.8
D.U.T.
+
I D , Drain Current (A)
RG
-VDD
0.6
VGS
Pulse Width 1 s Duty Factor 0.1 %
0.4
Fig 10a. Switching Time Test Circuit
0.2
VDS 90%
0.0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
1000
Thermal Response (Z thJA )
100
D = 0.50 0.20 0.10 0.05
10 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE)
1
0.1 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.1 1 0.0001 0.001 0.01 10
P DM t1 t2
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
6
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Pre-Irradiation
IRHLUB770Z4
4
EAS , Single Pulse Avalanche Energy (mJ)
1 5V
3
TOP BOTTOM ID 0.4A 0.5A 0.8A
VD S
L
D R IV E R
RG
D .U .T.
IA S
2
+ - VD D
A
VGS 20V
tp
0 .0 1
1
Fig 12a. Unclamped Inductive Test Circuit
0 25 50 75 100 125 150
V (B R )D S S tp
Starting T , Junction Temperature( C) J
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
4.5V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRHLUB770Z4
Pre-Irradiation
Footnotes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = 25V, starting TJ = 25C, L= 6.3 mH Peak IL = 0.8A, VGS = 10V ISD 0.8A, di/dt 130A/s, VDD 60V, TJ 150C
Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias.
10 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. 48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- UB
3.25 [.128] 2.82 [.115] 3X 0.61 [.024] 0.41 [.016] 0.96 [.038] 0.56 [.022]
3X 2.74 [.108] 2.41 [.085] 3 2 1
3X 0.355 [.014] MIN. 1.42 [.056] 0.97 [.046] 2.01 [.079] 1.81 [.071]
0.99 [.039] 0.89 [.035]
NOT ES : 1. OUT LINE CONFORMS T O MIL-PRF-19500/255L 2. ALL DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES ]. 3. CONT ROLLING DIMENS ION: INCH.
PAD AS SIGNMENT S 1 = GAT E 2 = S OURCE 3 = DRAIN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/2004
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