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PD - 9.1076
IRGPC30M
INSULATED GATE BIPOLAR TRANSISTOR
Features
* Short circuit rated - 10s @ 125C, V GE = 15V * Switching-loss rating includes all "tail" losses * Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve
C
Short Circuit Rated Fast IGBT
VCES = 600V
G E
VCE(sat) 2.9V
@VGE = 15V, I C = 16A
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.
TO-247AC
Absolute Maximum Ratings
Parameter
VCES IC @ T C = 25C IC @ T C = 100C ICM ILM tsc VGE EARV PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw.
Max.
600 26 16 52 52 10 20 10 100 42 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m)
Units
V A
s V mJ W
C
Thermal Resistance
Parameter
RJC RCS RJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
-- -- -- --
Typ.
-- 0.24 -- 6 (0.21)
Max.
1.2 -- 40 --
Units
C/W g (oz)
Revision 1
C-321
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IRGPC30M
Electrical Characteristics @ T = 25C (unless otherwise specified) J
V(BR)CES V(BR)ECS
V(BR)CES/TJ
VCE(on)
Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage
VGE(th) VGE(th)/TJ gfe ICES IGES
Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current
Min. Typ. Max. Units Conditions 600 -- -- V VGE = 0V, I C = 250A 20 -- -- V VGE = 0V, IC = 1.0A -- 0.65 -- V/C VGE = 0V, I C = 1.0mA -- 1.9 2.9 IC = 16A V GE = 15V -- 2.7 -- V IC = 26A See Fig. 2, 5 -- 2.2 -- IC = 16A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -12 -- mV/C VCE = VGE, IC = 250A 3.3 6.5 -- S VCE = 100V, I C = 16A -- -- 250 A VGE = 0V, V CE = 600V -- -- 1000 VGE = 0V, V CE = 600V, T J = 150C -- -- 100 nA VGE = 20V
Switching Characteristics @ T = 25C (unless otherwise specified) J
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC=80%(V CES), VGE=20V, L=10H, R G= 23, ( See fig. 13a ) Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Conditions -- 35 53 IC = 16A -- 7.4 11 nC VCC = 400V See Fig. 8 -- 14 21 VGE = 15V -- 31 -- TJ = 25C -- 31 -- ns IC = 16A, V CC = 480V -- 280 420 VGE = 15V, R G = 23 -- 310 470 Energy losses include "tail" -- 0.4 -- -- 1.9 -- mJ See Fig. 9, 10, 11, 14 -- 2.3 3.5 10 -- -- s VCC = 360V, T J = 125C VGE = 15V, R G = 23, VCPK < 500V -- 31 -- TJ = 150C, -- 30 -- ns IC = 14A, V CC = 480V -- 530 -- VGE = 15V, R G = 23 -- 660 -- Energy losses include "tail" -- 4.4 -- mJ See Fig. 10, 14 -- 13 -- nH Measured 5mm from package -- 750 -- VGE = 0V -- 110 -- pF VCC = 30V See Fig. 7 -- 9.3 -- = 1.0MHz
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IRGPC30M
40
For bo th:
Tria ngular w ave:
30
Load Current (A)
D uty c yc le: 50 % TJ = 125C T s ink = 90C G ate drive as spec ifie d P ow er D is sipation = 24W
C lam p voltage: 80% of rated
S quare w av e:
20
60% of rated voltage
10
Id e a l d io d e s
0 0.1 1 10
A
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=I RMS of fundamental; for triangular wave, I=I PK)
100
100
I C , Collector-to-Emitter Current (A)
TJ = 25C TJ = 150C
10
IC , Collector-to-Emitter Current (A)
TJ = 150C
10
TJ = 25C
1
0.1 0.1 1
VGE = 15V 20s PULSE WIDTH A
10
1 5 10
VCC = 100V 5s PULSE WIDTH A
15 20
VCE , Collector-to-Emitter Voltage (V)
VGE, Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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IRGPC30M
30
25
VCE , Collector-to-Emitter Voltage (V)
Maximum DC Collector Current (A)
VGE = 15V
5.0
VGE = 15V 80s PULSE WIDTH I C = 32A
4.0
20
3.0
15
I C = 16A
2.0
10
I C = 8.0A
1.0
5
0 25 50 75 100 125
A
150
0.0 -60 -40 -20 0 20 40 60 80
A
100 120 140 160
TC , Case Temperature (C)
TC, Case Temperature (C)
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature
10
T he rm al R e sp ons e (Z thJ C )
1
D = 0 .5 0
0 .2 0 0 .1 0
PD M
0.1
0 .0 5 0 .0 2 0 .0 1 S IN G L E P U L S E (T H E R M A L R E S P O N S E )
t
1
t
2
N o te s : 1 . D u ty fa c to r D = t
1
/t
2
0.01 0.00001
2 . P e a k T J = P D M x Z thJ C + T C
0.0001
0.00 1
0.01
0.1
1
10
t 1 , R e c ta n gu la r P u ls e D ura tio n (s e c )
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRGPC30M
1400
1200
VGE , Gate-to-Emitter Voltage (V)
V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc
20
VCE = 400V I C = 16A
16
C, Capacitance (pF)
1000
Cies
800
12
Coes
600
8
400
4
200
Cres
A
1 10 100
0
0 0 10 20 30
A
40
VCE, Collector-to-Emitter Voltage (V)
Qg , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
2.60
2.55
VCC VGE TC IC
= 480V = 15V = 25C = 16A
100
R G = 23 V GE = 15V V CC = 480V I C = 32A I C = 16A I C = 8.0A
Total Switching Losses
2.50
Total Switching Losses
A
0 10 20 30 40 50 60
10
2.45
2.40
1
2.35
2.30
0.1 -60 -40 -20 0 20 40 60 80
A 100 120 140 160
R G , Gate Resistance ()
TC , Case Temperature (C)
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Case Temperature
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IRGPC30M
12 100
10
IC , Collector-to-Emitter Current (A)
Total Switching Losses
RG TC V CC V GE
= 23 = 150C = 480V = 15V
VGE = 20V TJ = 125C
8
SAFE OPERATING AREA
6
10
4
2
0 0 10 20 30
A 40
1 1 10 100
A
1000
IC , Collector-to-Emitter Current (A)
VCE, Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
Refer to Section D for the following: Appendix C: Section D - page D-5 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 3 - JEDEC Outline TO-247AC Section D - page D-13
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