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 PD - 95428
IRG4BC40UPBF
INSULATED GATE BIPOLAR TRANSISTOR
Features
UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-220AB package Lead-Free
C
UltraFast Speed IGBT
VCES = 600V
G E
VCE(on) typ. = 1.72V
@VGE = 15V, IC = 20A
n-channel
Benefits
Generation 4 IGBTs offer highest efficiency available IGBTs optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings
Parameter
VCES I C @ TC = 25C I C @ TC = 100C ICM ILM VGE EARV P D @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw.
TO-220AB
Max.
600 40 20 160 160 20 15 160 65 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbfin (1.1Nm)
Units
V A
V mJ W C
Thermal Resistance
Parameter
RJC RCS RJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
---------------------
Typ.
-----0.50 -----2 (0.07)
Max.
0.77 -----80 ------
Units
C/W g (oz)
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1
06/17/04
IRG4BC40UPBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Min. 600 18 ------------VGE(th) Gate Threshold Voltage 3.0 VGE(th)/TJ Temperature Coeff. of Threshold Voltage ---gfe Forward Transconductance 11 ---ICES Zero Gate Voltage Collector Current ------IGES Gate-to-Emitter Leakage Current ---V (BR)CES V (BR)ECS Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage VCE(on) Collector-to-Emitter Saturation Voltage Typ. ------0.63 1.72 2.15 1.7 ----13 18 ------------Max. Units Conditions ---V V GE = 0V, IC = 250A ---V V GE = 0V, IC = 1.0A See Fig. 2, 5 ---- V/C V GE = 0V, IC = 1.0mA 2.1 I C = 20A VGE = 15V ---V I C = 40A ---I C = 20A, TJ = 150C 6.0 V CE = V GE, IC = 250A ---- mV/C V CE = V GE, IC = 250A ---S V CE = 100V, IC = 20A 250 V GE = 0V, VCE = 600V 2.0 A V GE = 0V, VCE = 10V, TJ = 25C 2500 V GE = 0V, VCE = 600V, TJ = 150C 100 n A V GE = 20V
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. ---------------------------------------------------------Typ. 100 16 40 34 19 110 120 0.32 0.35 0.67 30 19 220 160 1.4 7.5 2100 140 34 Max. Units Conditions 150 I C = 20A 25 nC V CC = 400V See Fig. 8 60 V GE = 15V ---TJ = 25C ---ns I C = 20A, VCC = 480V 175 V GE = 15V, RG = 10 180 Energy losses include "tail" ------mJ See Fig. 10, 11, 13, 14 1.0 ---TJ = 150C, ---ns I C = 20A, VCC = 480V ---V GE = 15V, RG = 10 ---Energy losses include "tail" ---mJ See Fig. 13, 14 ---nH Measured 5mm from package ---V GE = 0V ---pF V CC = 30V See Fig. 7 --- = 1.0MHz
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot.
(see fig. 13a)
VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 10, Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4BC40UPBF
60 For both: 50
Triangular wave:
I
Duty cycle: 50% T J = 125C T sink = 90C Gate drive as specified
Power Dissipation = 28W
Load Current ( A )
40 Square wave: 30 60% of rated voltage
Clamp voltage: 80% of rated
20
I
10
Ideal diodes
0 0.1 1 10
A
100
f, Frequency (kHz)
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
Fig. 1 - Typical Load Current vs. Frequency
1000
1000
IC , Collector-to-Emitter Current (A)
IC , Collector-to-Emitter Current (A)
100
100
TJ = 25C TJ = 150C
TJ = 150C
TJ = 25C
10
10
1 0.1 1
VGE = 15V 20s PULSE WIDTH A
10
1 4 6 8
VCC = 10V 5s PULSE WIDTH A
10 12
VCE , Collector-to-Emitter Voltage (V)
VGE, Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics TC = 25C www.irf.com
Fig. 3 - Typical Transfer Characteristics 3
IRG4BC40UPBF
40
V GE = 15V
2.5
VCE , Collector-to-Emitter Voltage (V)
Maximum DC Collector Current (A)
VGE = 15V 80s PULSE WIDTH I C = 40A
30
2.0
20
IC = 20A
1.5
10
I C = 10A
0 25 50 75 100 125
A
150
1.0 -60 -40 -20 0 20 40 60 80
A
100 120 140 160
TC , Case Temperature (C)
TJ , Junction Temperature (C)
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature
1
Thermal Response (Z thJC )
D = 0.50
0.20
0.1
0.10 0.05 SINGLE PULSE (THERMAL RESPONSE)
Notes: 1. Duty factor D = t / t 12 2. Peak TJ = PDM x Z thJC + T C
P DM
t
0.02 0.01
1 t2
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
t 1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com
IRG4BC40UPBF
4000 20
VGE , Gate-to-Emitter Voltage (V)
V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc
VCE = 400V I C = 20A
16
C, Capacitance (pF)
3000
Cies
12
2000
Coes
8
1000
Cres
4
0 1 10
A
100
0 0 20 40 60 80 100
A
120
VCE, Collector-to-Emitter Voltage (V)
Qg , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
1.1
Total Switching Losses (mJ)
1.0
Total Switching Losses (mJ)
VCC VGE TJ IC
= 480V = 15V = 25C = 20A
10
RG = 10 VGE = 15V VCC = 480V I C = 40A
0.9
I C = 20A
1
0.8
I C = 10A
0.7
0.6 0 10 20 30 40 50
A
60
0.1 -60 -40 -20 0 20 40 60 80
A 100 120 140 160
R G , Gate Resistance ( )
TJ , Junction Temperature (C)
Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com
Fig. 10 - Typical Switching Losses vs. Junction Temperature 5
IRG4BC40UPBF
4.0
3.0
I C , Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
RG TJ V CC V GE
= 10 = 150C = 480V = 15V
1000
VGE = 20V GE TJ = 125C
100
SAFE OPERATING AREA
2.0
10
1.0
0.0 0 10 20 30 40
A 50
1 1 10 100 1000
I C , Collector-to-Emitter Current (A)
VCE , Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
6
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IRG4BC40UPBF
L 50V 1000V VC *
D.U.T.
RL = 0 - 480V
480V 4 X IC@25C
c
* Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id.
480F 960V
d
Fig. 13a - Clamped Inductive
Load Test Circuit
Fig. 13b - Pulsed Collector
Current Test Circuit
IC L Driver* 50V D.U.T. VC
Fig. 14a - Switching Loss
Test Circuit
* Driver same type as D.U.T., VC = 480V
A
1000V
d
e
c d
90%
e
VC 90%
10%
t d(off)
Fig. 14b - Switching Loss
Waveforms
10% I C 5% t d(on)
tr E on E ts = (Eon +Eoff )
tf t=5s E off
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7
IRG4BC40UPBF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048)
2.87 (.113) 2.62 (.103)
4 15.24 (.600) 14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 2 1- GATE- DRAIN 1- GATE 32- DRAINSOURCE 2- COLLECTOR 3- EMITTER 3- SOURCE 4 - DRAIN
HEXFET
14.09 (.555) 13.47 (.530)
4- DRAIN
4.06 (.160) 3.55 (.140)
4- COLLECTOR
3X 3X 1.40 (.055) 1.15 (.045)
0.93 (.037) 0.69 (.027) M BAM
3X
0.55 (.022) 0.46 (.018)
0.36 (.014)
2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH
2.92 (.115) 2.64 (.104)
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
E XAMP L E : T H IS IS AN IR F 1 010 L OT COD E 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y L IN E "C" IN T E R NAT ION AL R E CT IF IE R L OGO AS S E MB L Y L OT CODE P AR T N U MB E R
Note: "P" in assembly line position indicates "Lead-Free"
DAT E CODE YE AR 7 = 1997 WE E K 19 L IN E C
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 06/04
8
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