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| IRFY140C MECHANICAL DATA Dimensions in mm (inches) 10.41 (0.410) 10.67 (0.420) 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS VDSS ID(cont) RDS(on) FEATURES 16.38 (0.645) 16.89 (0.665) 13.38 (0.527) 13.64 (0.537) 3.56 (0.140) Dia. 3.81 (0.150) 123 12.07 (0.500) 19.05 (0.750) 100V 15A 0.092 10.41 (0.410) 10.92 (0.430) 0.64 (0.025) Dia. 0.89 (0.035) 2.54 (0.100) BSC 3.05 (0.120) BSC * HERMETICALLY SEALED TO-257AA METAL PACKAGE * SIMPLE DRIVE REQUIREMENTS * LIGHTWEIGHT * SCREENING OPTIONS AVAILABLE * ALL LEADS ISOLATED FROM CASE TO-257AA - Metal Package Pad 1 - Gate Pad 2 - Drain Pad 3 - Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VGS ID ID IDM PD TJ , Tstg RJC RJA Gate - Source Voltage Continuous Drain Current @ Tcase = 25C Continuous Drain Current @ Tcase = 100C Pulsed Drain Current Power Dissipation @ Tcase = 25C Linear Derating Factor Operating and Storage Temperature Range Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient 20V 15A 10A 60A 50W 0.48W/C -55 to 150C 2.1C/W max. 80C/W max. Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 6/97 IRFY140C ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise stated) Parameter BVDSS TJ RDS(on) STATIC ELECTRICAL RATINGS Drain - Source Breakdown Voltage Breakdown Voltage Static Drain - Source On-State Resistance Forward Transconductance Zero Gate Voltage Drain Current Forward Gate - Source Leakage Reverse Gate - Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate - Source Charge Gate - Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Test Conditions VGS = 0 ID = 1mA VGS = 10V VDS = VGS VDS 15V VGS = 0 VGS = 20V VGS = -20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V VDS = 0.5BVDSS ID = 15A VDS = 0.5BVDSS VDD = 50V ID = 15A RG = 9.1 ID = 15A ID = 12A ID = 250A IDS = 12A VDS = 0.8BVDSS TJ = 125C ID = 1mA Min. 100 Typ. Max. Unit V BVDSS Temperature Coefficient of Reference to 25C 0.1 0.092 2 9.1 25 250 100 -100 1660 550 120 30 2.4 12 59 12 30.7 21 145 64 105 15 60 4 V / C V S( A nA )( VGS(th) Gate Threshold Voltage gfs IDSS IGSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr LD LS pF nC nC ns SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge PACKAGE CHARACTERISTICS Internal Drain Inductance Internal Source Inductance IS = 15A VGS = 0 IS = 15A TJ = 25C di / dt 100A/s VDD 50V (from 6mm down drain lead pad to centre of die) A V ns C TJ = 25C 1.5 400 2.4 8.7 8.7 nH (from 6mm down source lead to centre of source bond pad) Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 6/97 |
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