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PD - 94609 HEXFET(R) POWER MOSFET THRU-HOLE (Low-ohmic TO-254AA) IRF7MS2907 75V, N-CHANNEL Product Summary Part Number IRF7MS2907 BVDSS 75V RDS(on) ID 0.0055 45A* Seventh Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. Low-Ohmic TO-254AA Features: n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25C ID @ VGS = 10V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight * Current is limited by package For footnotes refer to the last page 45* 45* 180 208 1.67 20 760 45 20.8 2.2 -55 to 150 300 (0.063in./1.6mm from case for 10s) 4.3 (Typical) Units A W W/C V mJ A mJ V/ns o C g www.irf.com 1 04/14/03 IRF7MS2907 Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 75 -- -- 2.0 70 -- -- -- -- -- -- -- -- -- -- -- -- Typ Max Units -- 0.087 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.8 -- -- 0.0055 4.0 -- 20 250 100 -100 375 60 150 40 135 175 75 -- V V/C V S( ) A Test Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 1.0mA VGS = 10V, ID = 45A VDS = VGS, ID = 250A VDS > 15V, IDS = 45A VDS= 75V ,VGS=0V VDS = 60V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS = 10V, ID = 45A VDS = 60V VDD = 38V, ID = 45A VGS = 10V, RG = 1..2 IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance -- -- -- 12060 2280 605 -- -- -- pF VGS = 0V, VDS =25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD trr QRR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min Typ Max Units -- -- -- -- -- -- -- -- -- -- 45* 180 1.0 175 850 Test Conditions A V ns nC Tj = 25C, IS = 45A, VGS = 0V Tj = 25C, IF = 45A, di/dt 100A/s VDD 25V Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by package Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max -- -- 0.6 Units C/W Test Conditions Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com IRF7MS2907 1000 ID , Drain-to-Source Current (A) 100 ID , Drain-to-Source Current (A) VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 4.5V 4.5V 20s PULSE WIDTH Tj = 25C 10 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) 20s PULSE WIDTH Tj = 150C 10 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 ID = 45A R DS(on) , Drain-to-Source On Resistance (Normalized) ID , Drain-to-Source Current ( ) 2.0 100 T J = 150C 1.5 T J = 25C 10 1.0 1 3 3.5 4 VDS = 25V 20s PULSE WIDTH 15 4.5 5 5.5 6 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF7MS2907 20000 16000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = 45A 16 VDS = 60V VDS = 37V VDS = 15V C, Capacitance (pF) Ciss 12000 12 8000 C oss C rss 8 4000 4 0 1 10 100 0 0 100 200 FOR TEST CIRCUIT SEE FIGURE 13 300 400 500 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R (on) DS ISD , Reverse Drain Current ( ) 100 T J = 150C ID, Drain-to-Source Current (A) 100 10 T J = 25C 100s 1ms 10 Tc = 25C Tj = 150C Single Pulse 0.1 1 10 1 VGS = 0V 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10ms 100 1000 0.1 1 VSD , Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF7MS2907 160 LIMITED BY PACKAGE 120 V DS VGS RG RD D.U.T. + I D , Drain Current (A) -V DD VGS 80 Pulse Width 1 s Duty Factor 0.1 % 40 Fig 10a. Switching Time Test Circuit VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.001 0.00001 Notes: 1. Duty factor D = t1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 0.0001 0.001 0.01 PDM t1 t2 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF7MS2907 2000 EAS , Single Pulse Avalanche Energy (mJ) 1 5V 1600 ID 20A 28.5A BOTTOM 45A TOP VDS L D R IV E R 1200 RG 2VV 0 GS tp D .U .T. IA S + V - DD A 800 0 .0 1 400 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K 12V .2F .3F QG 10V QGS VG QGD VGS 3mA D.U.T. + V - DS IG ID Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRF7MS2907 Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = 25 V, Starting TJ = 25C, L= 0.75mH Peak I AS = 45A, VGS =10V, RG= 25 ISD 45A, di/dt 380A/s, Pulse width 300 s; Duty Cycle 2% VDD 75V, TJ 150C Case Outline and Dimensions -- Low-ohmic TO-254AA 0.12 [.005] 3.78 [.149] 3.53 [.139] A 13.84 [.545] 13.59 [.535] 6.60 [.260] 6.32 [.249] 1.27 [.050] 1.02 [.040] 3.78 [.149] 3.53 [.139] A 13.84 [.545] 13.59 [.535] 6.60 [.260] 6.32 [.249] 0.12 [.005] 1.27 [.050] 1.02 [.040] 17.40 [.685] 16.89 [.665] 1 2 3 20.32 [.800] 20.07 [.790] 13.84 [.545] 13.59 [.535] B 22.73 [.895] 21.21 [.835] 17.40 [.685] 16.89 [.665] 1 2 3 20.32 [.800] 20.07 [.790] 13.84 [.545] 13.59 [.535] B R 1.52 [.060] C 17.40 [.685] 16.89 [.665] 0.84 [.033] MAX. 4.82 [.190] 3.81 [.150] 3.81 [.150] 4.06 [.160] 3.56 [.140] 3X 1.14 [.045] 0.89 [.035] 0.36 [.014] BA 3X 3.81 [.150] 2X 1.14 [.045] 0.89 [.035] 0.36 [.014] BA 3.81 [.150] 2X NOTES : 1. 2. 3. 4. DIMENS IONING & TOLERANCING PER AS ME Y14.5M-1994. ALL DIME NS IONS ARE S HOWN IN MILLIMETERS [INCHES ]. CONTROLLING DIMENS ION: INCH. CONFORMS T O JEDEC OUTLINE T O-254AA. PIN AS S IGNMENTS 1 = DRAIN 2 = S OURCE 3 = GATE CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/03 www.irf.com 7 |
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