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 PD- 95559
IRF7473PBF
Applications l Telecom and Data-Com 24 and 48V input DC-DC converters l Motor Control l Uninterrutible Power Supply l Lead-Free Benefits l Ultra Low On-Resistance l High Speed Switching l Low Gate Drive Current Due to Improved Gate Charge Characteristic l Improved Avalanche Ruggedness and Dynamic dv/dt l Fully Characterized Avalanche Voltage and Current Typical SMPS Topologies l Full and Half Bridge 48V input Circuit l Forward 24V input Circuit Absolute Maximum Ratings
Parameter
ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
HEXFET(R) Power MOSFET VDSS
100V
RDS(on) max
26mW@VGS = 10V
ID
6.9A
S S S G
1
8
A A D D D D
2
7
3
6
4
5
Top View
SO-8
Max.
6.9 5.5 55 2.5 0.02 20 5.8 -55 to + 150 300 (1.6mm from case )
Units
A W W/C V V/ns C
Thermal Resistance
Symbol
RJL RJA
Parameter
Junction-to-Drain Lead Junction-to-Ambient
Typ.
--- ---
Max.
20 50
Units
C/W
Notes through are on page 8
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1
8/17/04
IRF7473PBF
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 100 --- --- 3.5 --- --- --- --- Typ. --- 0.11 22 --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 26 m VGS = 10V, ID = 4.1A 5.5 V VDS = VGS, ID = 250A 1.0 VDS = 95V, VGS = 0V A 250 VDS = 80V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V
Dynamic @ TJ = 25C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 10 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 61 21 19 24 20 29 11 3180 230 120 830 150 230 Max. Units Conditions --- S VDS = 50V, ID = 4.1A --- ID = 4.1A --- nC VDS = 50V --- VGS = 10V, --- VDD = 50V --- ID = 4.1A ns --- RG = 6.0 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 80V, = 1.0MHz --- VGS = 0V, VDS = 0V to 80V
Avalanche Characteristics
Parameter
EAS IAR Single Pulse Avalanche Energy Avalanche Current
Typ.
--- ---
Max.
140 4.1
Units
mJ A
Diode Characteristics
IS
ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- 55 140 2.3 A 55 1.3 --- --- V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 4.1A, VGS = 0V TJ = 25C, IF = 4.1A di/dt = 100A/s
D
S
2
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IRF7473PBF
1000
VGS TOP 15V 12V 10V 8.0V 7.0V 6.5V 6.0V BOTTOM 5.5V
1000
100
I D , Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
VGS 15V 12V 10V 8.0V 7.0V 6.5V 6.0V BOTTOM 5.5V TOP
10
10
1
6.0V
0.1
1
5.5V
0.01 0.1 1
20s PULSE WIDTH Tj = 25C
10 100
0.1 0.1
20s PULSE WIDTH TJ = 150 C
1 10 100
VDS, Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
100
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 6.9A
I D , Drain-to-Source Current (A)
2.0
TJ = 150 C
10
1.5
1
1.0
TJ = 25 C
0.1 V DS = 25V 20s PULSE WIDTH 5 6 7 8 9 10 11 12
0.5
0.01
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF7473PBF
100000
20
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + C ds gd
ID = 4.1A VDS = 80V VDS = 50V VDS = 20V
16
10000
C, Capacitance(pF)
Ciss
1000
12
Coss Crss
8
100
4
10 1 10 100
0 0 20 40 60 80 100
VDS, Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000 OPERATION IN THIS AREA LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
100
10
TJ = 150 C TJ = 25 C
1
10 100sec 1 Tc = 25C Tj = 150C Single Pulse 0.1 1 10
1msec 10msec 100 1000
0.1 0.0
V GS = 0 V
0.4 0.8 1.2 1.6
0.1
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF7473PBF
8.0
VDS VGS
6.0
RD
ID , Drain Current (A)
RG 10V
Pulse Width 1 s Duty Factor 0.1 %
D.U.T.
+
-V DD
4.0
2.0
Fig 10a. Switching Time Test Circuit
VDS 90%
0.0
25
50
75
100
125
150
TC , Case Temperature ( C)
Fig 9. Maximum Drain Current Vs. Ambient Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
100
Thermal Response (Z thJA )
D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100
0.1
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7473PBF
RDS ( on) , Drain-to-Source On Resistance ( )
0.028
RDS(on) , Drain-to -Source On Resistance ()
0.035
0.026
0.030
VGS = 10V
0.024
0.025
ID = 6.9A
0.022 0 20 40 60
0.020 6.0 8.0 10.0 12.0 14.0 16.0
ID , Drain Current (A)
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
Fig 13. On-Resistance Vs. Gate Voltage
50K 12V .2F .3F
VGS
QGS
D.U.T. + V - DS
QG QGD
400
VG
EAS , Single Pulse Avalanche Energy (mJ)
VGS
3mA
TOP BOTTOM
300
Charge
IG ID
ID 1.8A 3.3A 4.1A
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit and Waveform
200
15V
100
V(BR)DSS tp
VDS L
DRIVER
RG
20V 10V
D.U.T
IAS tp
+ V - DD
0 25 50 75 100 125 150
A
0.01
I AS
Starting TJ , Junction Temperature ( C)
Fig 15a&b. Unclamped Inductive Test circuit and Waveforms
Fig 15c. Maximum Avalanche Energy Vs. Drain Current
6
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IRF7473PBF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
D A 5 B
DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMETERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00
A1 .0040
8 6 E 1
7
6
5 H 0.25 [.010] A
c D E e e1 H K L y
2
3
4
.050 BASIC .025 BASIC .2284 .0099 .016 0 .2440 .0196 .050 8
1.27 BASIC 0.635 BASIC 5.80 0.25 0.40 0 6.20 0.50 1.27 8
6X
e
e1 A C 0.10 [.004] 8X b 0.25 [.010] A1 CAB y
K x 45
8X L 7
8X c
NOT ES : 1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBST RAT E. 3X 1.27 [.050]
F OOTPRINT 8X 0.72 [.028]
6.46 [.255]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: T HIS IS AN IRF7101 (MOS FET ) DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER
INT ERNAT IONAL RECT IFIER LOGO
XXXX F7101
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IRF7473PBF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25C, L = 16mH
RG = 25, IAS = 4.1A.
When mounted on 1 inch square copper board Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
ISD 4.1A, di/dt 210A/s, VDD V(BR)DSS,
TJ 150C
Pulse width 400s; duty cycle 2%.
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/04
8
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