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PD - 97232A
IRF6668PbF IRF6668TRPbF
l l l l l l l l l l
RoHs Compliant Lead-Free (Qualified up to 260C Reflow) Application Specific MOSFETs Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques
DirectFET Power MOSFET
Typical values (unless otherwise specified)
VDSS Qg
tot
VGS Qgd
7.8nC
RDS(on) Qoss
12nC
80V max 20V max
12m@ 10V
Qgs2
1.6nC
Qrr
40nC
Vgs(th)
4.0V
22nC
MZ
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MZ
DirectFET ISOMETRIC
Description
The IRF6668PbF combines the latest HEXFET(R) Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6668PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for 48V(10%) or 36V-60V ETSI input voltage range systems. The IRF6668PbF is also ideal for secondary side synchronous rectification in regulated isolated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25C ID @ TC = 70C IDM EAS IAR
60
Typical RDS(on) (m)
Max.
Units
V
Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single Pulse Avalanche Energy Avalanche CurrentAg
g
f f
h
VGS, Gate-to-Source Voltage (V)
80 20 55 44 170 24 23
12.0 10.0 8.0 6.0 4.0 2.0 0.0 0 2 4 6 8 ID= 12A VDS= 64V VDS= 40V
A mJ A
50 40 30 20 10 0 4 6 T J = 25C 8 10 12 T J = 125C
ID = 12A
14
16
10 12 14 16 18 20 22 24
VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate-to-Source Voltage Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state.
QG, Total Gate Charge (nC)
Fig 2. Total Gate Charge vs. Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.088mH, RG = 25, IAS = 23A.
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08/28/06
IRF6668PbF
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG(Internal) td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min.
80 --- --- 3.0 --- --- --- --- --- 22 --- --- --- --- --- --- ---
---
Typ. Max. Units
--- 0.097 12 4.0 -11 --- --- --- --- --- 22 4.8 1.6 7.8 7.8 9.4 12 1.0 19 13 7.1 23 1320 310 76 --- --- 15 4.9 --- 20 250 100 -100 --- 31 --- --- 12 --- --- --- --- --- --- --- --- --- --- --- pF ns nC
Conditions
VGS = 0V, ID = 250A
V V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 12A i V mV/C A nA S VDS = 80V, VGS = 0V VDS = 64V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 10V, ID = 12A VDS = 40V nC VGS = 10V ID = 12A See Fig. 15 VDS = 16V, VGS = 0V VDD = 40V, VGS = 10V ID = 12A RG = 6.2 See Fig. 16 & 17 VGS = 0V VDS = 25V = 1.0MHz i VDS = VGS, ID = 100A
--- --- --- --- --- --- ---
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) g Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge --- --- --- --- --- --- 34 40 170 1.3 51 60 V ns nC
Min.
---
Typ. Max. Units
--- 81 A
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 12A, VGS = 0V i TJ = 25C, IF = 12A di/dt = 100A/s i See Fig. 18
Notes:
Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400s; duty cycle 2%.
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IRF6668PbF
Absolute Maximum Ratings
PD @TA = 25C PD @TA = 70C PD @TC = 25C TP TJ TSTG Power Dissipation Power Dissipation Power Dissipation Peak Soldering Temperature Operating Junction and Storage Temperature Range
e e f
Parameter
Max.
2.8 1.8 89 270 -40 to + 150
Units
W
C
Thermal Resistance
RJA RJA RJA RJC RJ-PCB Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB Mounted Linear Derating Factor
10
em km lm fm
Parameter
Typ.
--- 12.5 20 --- 1.0 0.022
Max.
45 --- --- 1.4 ---
Units
C/W
eA
W/C
Thermal Response ( Z thJC )
1
D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE )
R1 R1 J 1 2 R2 R2 R3 R3 C 1 2 3 3 C
0.1
J
C i= i/Ri Ci= i/Ri
Ri (C/W) i (sec) 0.3173 0.000048 0.5283 0.000336 0.5536 0.001469
0.01
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.0001 0.001 0.01 0.1
0.001 1E-006 1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes: Used double sided cooling , mounting pad. Mounted on minimum footprint full size board with metalized back and with small clip heatsink.
R is measured at TJ of approximately 90C.
Surface mounted on 1 in. square Cu (still air).
Mounted to a PCB with small clip heatsink (still air)
Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air)
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IRF6668PbF
1000
TOP VGS 15V 10V 8.0V 7.0V 6.0V
1000
TOP VGS 15V 10V 8.0V 7.0V 6.0V
ID, Drain-to-Source Current (A)
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
100
100
6.0V 10
10 6.0V
60s PULSE WIDTH
Tj = 25C 1 0.1 1 VDS, Drain-to-Source Voltage (V) 10
1 0.1
60s PULSE WIDTH
Tj = 150C 1 V DS, Drain-to-Source Voltage (V)
10
Fig 4. Typical Output Characteristics
1000 VDS = 10V 60s PULSE WIDTH
ID, Drain-to-Source Current (A)
Fig 5. Typical Output Characteristics
2.0 ID = 12A
Typical RDS(on) (Normalized)
VGS = 10V
100
1.5
10
T J = 150C T J = 25C T J = -40C
1.0
1
0.1 2 4 6 8 10 12
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (C)
Fig 6. Typical Transfer Characteristics
10000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd
Fig 7. Normalized On-Resistance vs. Temperature
60 T J = 25C 50
Typical RDS(on) ( m)
C oss = C ds + C gd
C, Capacitance (pF)
1000
Ciss Coss
40 30 20 10 0
Vgs = 7.0V Vgs = 8.0V Vgs = 10V Vgs = 15V
100
Crss
10 1 10 VDS, Drain-to-Source Voltage (V) 100
0
20
40
60
80
100
ID, Drain Current (A)
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
Fig 9. Typical On-Resistance vs. Drain Current
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IRF6668PbF
1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100
ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A)
T J = 150C T J = 25C T J = -40C
100
100sec 1msec
10
10
10msec
1 VGS = 0V 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V)
1 Tc = 25C Tj = 150C Single Pulse 0.1 0 1 10 100 VDS, Drain-to-Source Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
60 50
ID, Drain Current (A) Typical VGS(th) , Gate threshold Voltage (V)
Fig11. Maximum Safe Operating Area
6.0
5.0
40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (C)
4.0 ID ID ID ID = 100A = 250A = 1.0mA = 1.0A
3.0
2.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C )
Fig 12. Maximum Drain Current vs. Case Temperature
100
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13. Threshold Voltage vs. Temperature
ID 80
TOP
4.3A 7.6A BOTTOM 23A
60
40
20
0 25 50 75 100 125 150 Starting T J , Junction Temperature (C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
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IRF6668PbF
Current Regulator Same Type as D.U.T.
Id Vds
50K 12V .2F .3F
Vgs
D.U.T. VGS
3mA
+ V - DS
Vgs(th)
IG
ID
Current Sampling Resistors
Qgs1 Qgs2
Qgd
Qgodr
Fig 15a. Gate Charge Test Circuit
Fig 15b. Gate Charge Waveform
V(BR)DSS
15V
tp
DRIVER
VDS
L
VGS RG
D.U.T
IAS
+ V - DD
A
20V
tp
0.01
I AS
Fig 16b. Unclamped Inductive Waveforms
Fig 16a. Unclamped Inductive Test Circuit
LD VDS
90%
+
VDD D.U.T VGS Pulse Width < 1s Duty Factor < 0.1%
VDS
10%
VGS
td(on) tr td(off) tf
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
6
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IRF6668PbF
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * di/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage
Body Diode
Forward Drop
Inductor Curent Inductor Current
Ripple 5% ISD
* VGS = 5V for Logic Level Devices Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET(R) Power MOSFETs
DirectFET Substrate and PCB Layout, MZ Outline (Medium Size Can, Z-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
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IRF6668PbF
DirectFET Outline Dimension, MZ Outline (Medium Size Can, Z-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
DIMENSIONS
METRIC CODE MIN MAX A 6.35 6.25 B 4.80 5.05 C 3.95 3.85 D 0.45 0.35 E 0.72 0.68 F 0.72 0.68 G 0.97 0.93 H 0.67 0.63 J 0.32 0.28 K 1.26 1.13 L 2.66 2.53 M 0.616 0.676 R 0.020 0.080 P 0.17 0.08 IMPERIAL MAX MAX 0.246 0.250 0.189 0.201 0.152 0.156 0.014 0.018 0.027 0.028 0.027 0.028 0.037 0.038 0.025 0.026 0.011 0.013 0.044 0.050 0.100 0.105 0.0235 0.0274 0.0008 0.0031 0.003 0.007
DirectFET Part Marking
8
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IRF6668PbF
DirectFET Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6668TRPBF). For 1000 parts on 7" reel, order IRF6668TR1PBF REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) IMPERIAL IMPERIAL METRIC METRIC MIN MIN MAX CODE MAX MIN MIN MAX MAX 12.992 6.9 A N.C N.C 177.77 N.C 330.0 N.C 0.795 B 0.75 N.C N.C 19.06 20.2 N.C N.C 0.504 C 0.53 0.50 13.5 12.8 0.520 13.2 12.8 0.059 D 0.059 1.5 N.C 1.5 N.C N.C N.C E 3.937 2.31 58.72 N.C 100.0 N.C N.C N.C F N.C N.C 0.53 N.C N.C 0.724 18.4 13.50 G 0.488 0.47 11.9 12.4 N.C 0.567 14.4 12.01 H 0.469 0.47 11.9 11.9 0.606 N.C 15.4 12.01
LOADED TAPE FEED DIRECTION
CODE A B C D E F G H
DIMENSIONS IMPERIAL METRIC MIN MAX MIN MAX 0.311 0.319 7.90 8.10 0.154 0.161 3.90 4.10 0.469 0.484 11.90 12.30 0.215 0.219 5.45 5.55 0.201 0.209 5.10 5.30 0.256 0.264 6.50 6.70 0.059 N.C 1.50 N.C 0.059 0.063 1.50 1.60
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/06
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