View IRF6637TR1_1255522.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD - 96968
IRF6637
DirectFET Power MOSFET
l l l l l l l l l
Lead and Bromide Free Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for both Sync.FET and some Control FET application Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques
Typical values (unless otherwise specified)
VDSS Qg
tot
VGS Qgd
4.0nC
RDS(on) Qgs2
1.0nC
RDS(on) Qoss
9.9nC
30V max 20V max 5.7m@ 10V 8.2m@ 4.5V
Qrr
20nC
Vgs(th)
1.8V
11nC
MP
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MP
DirectFET ISOMETRIC
Description
The IRF6637 combines the latest HEXFET(R) Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6637 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6637 has been optimized for parameters that are critical in synchronous buck operating from 12 volt buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 70C ID @ TC = 25C IDM EAS IAR
25
Typical R DS (on) (m)
Max.
30 20 14 11 59 110 31 11
VGS, Gate-to-Source Voltage (V)
Units
V
Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS Continuous Drain Current, VGS Pulsed Drain Current Continuous Drain Current, VGS @ 10V
g
e @ 10V e @ 10V f h
12 10 8 6 4 2 0 0 4 8 ID= 11A
A
Single Pulse Avalanche Energy Avalanche CurrentAg
ID = 14A 20 15 TJ = 125C 10 TJ = 25C 5 2.0 4.0 6.0 8.0 VGS, Gate-to-Source Voltage (V)
mJ A
VDS = 24V VDS= 15V
10.0
12
16
20
24
Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state.
Fig 1. Typical On-Resistance Vs. Gate Voltage
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.52mH, RG = 25, IAS = 11A.
www.irf.com
1
2/15/05
IRF6637
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min.
30 --- --- --- 1.35 --- --- --- --- --- 38 --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. Max. Units
--- 26 5.7 8.2 1.8 -5.4 --- --- --- --- --- 11 3.1 1.0 4.0 2.9 5.0 9.9 1.2 12 15 14 3.8 1330 430 150 --- --- 7.7 10.8 2.35 --- 1.0 150 100 -100 --- 17 --- --- 6.0 --- --- --- --- --- --- --- --- --- --- --- pF VGS = 0V VDS = 15V = 1.0MHz ns nC
Conditions
VGS = 0V, ID = 250A VGS = 10V, ID = 14A c VGS = 4.5V, ID = 11A c VDS = VGS, ID = 250A VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 15V, ID = 11A VDS = 15V
V m V mV/C A nA S
mV/C Reference to 25C, ID = 1mA
nC
VGS = 4.5V ID = 11A See Fig. 15 VDS = 16V, VGS = 0V VDD = 16V, VGS = 4.5V c ID = 11A Clamped Inductive Load
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) d --- --- --- --- 13 20 1.0 20 30 V ns nC Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge --- --- 110
Min.
---
Typ. Max. Units
--- 2.9 A
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 11A, VGS = 0V c TJ = 25C, IF = 11A di/dt = 500A/s c
Notes:
Pulse width 400s; duty cycle 2%. Repetitive rating; pulse width limited by max. junction temperature.
2
www.irf.com
IRF6637
Absolute Maximum Ratings
PD @TA = 25C PD @TA = 70C PD @TC = 25C TP TJ TSTG
Power Dissipation Power Dissipation f
Power Dissipation Operating Junction and
Parameter
Max.
2.3 1.5 89 270 -40 to + 150
Units
W
Peak Soldering Temperature Storage Temperature Range
C
Thermal Resistance
RJA RJA RJA RJC RJ-PCB
g Junction-to-Ambient dg Junction-to-Ambient eg Junction-to-Case fg
Junction-to-Ambient Linear Derating Factor
100
Parameter
Typ.
--- 12.5 20 --- 1.0 0.018
Max.
55 --- --- 3.0 ---
Units
C/W
Junction-to-PCB Mounted
A
W/C
D = 0.50
Thermal Response ( Z thJA )
10
0.20 0.10 0.05
1
0.02 0.01
J
R1 R1 J 1 2
R2 R2
R3 R3 3
R4 R4 4
R5 R5 C 5
Ri (C/W)
0.6676 1.0462 1.5611 29.282 25.455
i (sec)
0.000066 0.000896 0.004386 0.68618
1
2
3
4
5
Ci= i/Ri Ci= i/Ri
0.1
SINGLE PULSE ( THERMAL RESPONSE )
0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1
32 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc
1 10 100
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Surface mounted on 1 in. square Cu board, steady state. Used double sided cooling , mounting pad. Mounted on minimum footprint full size board with metalized
back and with small clip heatsink. Notes:
TC measured with thermocouple incontact with top (Drain) of part. R is measured at TJ of approximately 90C.
Surface mounted on 1 in. square Cu board (still air).
Mounted to a PCB with small clip heatsink (still air)
Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air)
www.irf.com
3
IRF6637
1000
TOP VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V 2.5V
1000
TOP VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V 2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
1
2.5V 0.1 0.1 1
60s PULSE WIDTH
Tj = 25C 1 100 0.1 10
2.5V
60s PULSE WIDTH
Tj = 150C 10 100
1
Fig 4. Typical Output Characteristics
1000 VDS = 15V
ID, Drain-to-Source Current ()
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Output Characteristics
2.0 ID = 14A
Typical RDS(on) (Normalized)
60s PULSE WIDTH 100 TJ = 150C TJ = 25C TJ = 40C
VGS = 4.5V VGS = 10V
1.5
10
1
1.0
0.1 1.5 2.0 2.5 3.0 3.5 4.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (C)
VGS, Gate-to-Source Voltage (V)
Fig 6. Typical Transfer Characteristics
10000
VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd
Fig 7. Normalized On-Resistance vs. Temperature
20 TJ = 25C 16 Vgs = 3.5V Vgs = 4.0V Vgs = 4.5V Vgs = 5.0V Vgs = 10V
Ciss 1000 Coss
Typical RDS (on) (m)
C, Capacitance(pF)
12
8
Crss 100 1 10 VDS , Drain-to-Source Voltage (V) 100
4 0 20 40 60 80 100
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
Fig 9. Typical On-Resistance Vs. Drain Current and Gate Voltage
ID, Drain Current (A)
4
www.irf.com
IRF6637
1000.0
ID, Drain-to-Source Current (A)
1000
OPERATION IN THIS AREA LIMITED BY R DS (on)
ISD , Reverse Drain Current (A)
100.0
TJ = 150C TJ = 25C TJ = -40C
100 100sec 1msec
10.0
10
1.0 VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VSD , Source-to-Drain Voltage (V)
1
10msec TA = 25C Tj = 150C Single Pulse 0.10 1.00 10.00 100.00
0.1 VDS , Drain-toSource Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
Typical VGS(th) Gate threshold Voltage (V)
Fig11. Maximum Safe Operating Area
2.5
60 50
ID, Drain Current (A)
40 30 20 10 0 25 50 75 100 125 150 TC , Case Temperature (C)
2.0
ID = 250A
1.5
1.0 -75 -50 -25 0 25 50 75 100 125 150
TJ , Junction Temperature ( C )
Fig 12. Maximum Drain Current vs. Case Temperature
160
Fig 13. Typical Threshold Voltage vs. Junction Temperature
ID 4.9A 7.5A BOTTOM 11A
TOP
EAS, Single Pulse Avalanche Energy (mJ)
120
80
40
0 25 50 75 100 125 150
Starting TJ, Junction Temperature (C)
Fig 14. Maximum Avalanche Energy Vs. Drain Current
www.irf.com
5
IRF6637
Current Regulator Same Type as D.U.T.
Id Vds
50K 12V .2F .3F
Vgs
D.U.T. VGS
3mA
+ V - DS
Vgs(th)
IG
ID
Current Sampling Resistors
Qgs1 Qgs2
Qgd
Qgodr
Fig 15a. Gate Charge Test Circuit
Fig 15b. Gate Charge Waveform
V(BR)DSS
15V
tp
DRIVER
VDS
L
VGS RG
D.U.T
IAS
+ V - DD
A
20V
tp
0.01
I AS
Fig 16c. Unclamped Inductive Waveforms
Fig 16b. Unclamped Inductive Test Circuit
LD VDS
90%
+
VDD D.U.T VGS Pulse Width < 1s Duty Factor < 0.1%
VDS
10%
VGS
td(on) tr td(off) tf
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
6
www.irf.com
IRF6637
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * di/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage
Body Diode
Forward Drop
Inductor Curent Inductor Current
Ripple 5% ISD
* VGS = 5V for Logic Level Devices Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET(R) Power MOSFETs
DirectFET Substrate and PCB Layout, MP Outline (Medium Size Can, P-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
D G D S S
D
G- Gate D- Drain S- Source
D
www.irf.com
7
IRF6637
DirectFET Outline Dimension, MP Outline (Medium Size Can, P-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
DIMENSIONS
METRIC IMPERIAL MAX 0.246 1.889 0.152 0.014 0.023 0.023 0.030 0.021 0.025 0.063 0.113 0.023 0.001 0.003 MAX 0.250 0.199 0.156 0.018 0.032 0.032 0.031 0.022 0.026 0.068 0.119 0.028 0.003 0.007
NOTE: CONTROLLING DIMENSIONS ARE IN MM
CODE A B C D E F G H J K L M N P
MIN 6.25 4.80 3.85 0.35 0.58 0.58 0.75 0.53 0.63 1.59 2.87 0.59 0.03 0.08
MAX 6.35 5.05 3.95 0.45 0.62 0.62 0.79 0.57 0.67 1.72 3.04 0.70 0.08 0.17
DirectFET Part Marking
8
www.irf.com
IRF6637
DirectFET Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6637). For 1000 parts on 7" reel, order IRF6637TR1 REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) IMPERIAL IMPERIAL METRIC METRIC MAX MIN MIN CODE MAX MAX MAX MIN MIN 6.9 12.992 N.C A 330.0 N.C 177.77 N.C N.C 0.75 0.795 B N.C 20.2 N.C 19.06 N.C N.C 0.53 0.504 C 0.50 12.8 13.5 0.520 13.2 12.8 0.059 0.059 D N.C 1.5 1.5 N.C N.C N.C 2.31 3.937 E N.C 100.0 58.72 N.C N.C N.C N.C N.C F 0.53 N.C N.C 0.724 18.4 13.50 G 0.47 0.488 N.C 12.4 11.9 0.567 14.4 12.01 H 0.47 0.469 N.C 11.9 11.9 0.606 15.4 12.01
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.02/05
www.irf.com
9

▲Up To Search▲

Price & Availability of IRF6637TR1

	To Download IRF6637TR1 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .