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Preliminary TrenchStoP Series
IGW08T120
C
Low Loss IGBT in Trench and Fieldstop technology
* * * * * * * * Approx. 1.0V reduced VCE(sat) compared to BUP305D Short circuit withstand time - 10s Designed for : - Frequency Converters - Uninterrupted Power Supply Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge
G
E
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 1200V IC 8A VCE(sat),Tj=25C 1.7V Tj,max 150C Symbol VCE IC 16 8 ICpul s IF 16 8 VGE
1)
Type IGW08T120
Package TO-247AC
Ordering Code Q67040-S4513
Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 150C Diode forward current TC = 25C TC = 100C Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Tj Tstg -40...+150 -55...+150 260 C VGE = 15V, VCC 1200V, Tj 150C Ptot 70 W tSC Value 1200 Unit V A
24 24
20 10
V s
1)
Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Preliminary / Rev. 1 Sep-03
Power Semiconductors
Preliminary TrenchStoP Series
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Thermal resistance, junction - ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0V , I C = 0 .5m A VCE(sat) V G E = 15 V , I C = 8 A T j =2 5 C T j =1 2 5 C T j =1 5 0 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C = 0. 3m A, V C E = V G E V C E = 12 0 0V, V G E = 0V T j =2 5 C T j =1 5 0 C Gate-emitter leakage current Transconductance Integrated gate resistor IGES gfs RGint V C E = 0V , V G E =2 0 V V C E = 20 V , I C = 8 A 5 none 0.2 2.0 100 nA S 5.0 1.7 2.0 2.2 5.8 2.2 6.5 mA 1200 V Symbol Conditions Value min. typ. max. Unit RthJA TO-247AC 40 RthJC 1.7 K/W Symbol Conditions Max. Value Unit
IGW08T120
Power Semiconductors
2
Preliminary / Rev. 1 Sep-03
Preliminary TrenchStoP Series
Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current
1)
IGW08T120
600 36 28 53 48 13 nC nH A pF
Ciss Coss Crss QGate LE IC(SC)
V C E = 25 V , V G E = 0V , f= 1 MH z V C C = 96 0 V, I C =8 A V G E = 15 V T O - 24 7A C V G E = 15 V ,t S C 10 s V C C = 6 0 0 V, T j = 25 C
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =2 5 C , V C C = 60 0 V, I C = 8 A, V G E =- 15 /1 5 V , R G = 81 , 2) L =1 8 0n H, 2) C = 3 9p F Energy losses include "tail" and diode reverse recovery. 40 23 450 70 0.67 0.7 1.37 mJ ns Symbol Conditions Value min. typ. max. Unit
Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j =1 5 0 C, V C C = 60 0 V, I C =8 A , V G E =- 15 /1 5 V , R G = 8 1 , 2) L =1 8 0n H, 2) C = 3 9p F Energy losses include "tail" and diode reverse recovery. 40 26 570 140 1.08 1.2 2.28 mJ ns Symbol Conditions Value min. typ. max. Unit
1) 2)
Allowed number of short circuits: <1000; time between short circuits: >1s. Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E. 3 Preliminary / Rev. 1 Sep-03
Power Semiconductors
Preliminary TrenchStoP Series
IGW08T120
tp=2s
20A
TC=80C
10A
IC, COLLECTOR CURRENT
15A TC=110C 10A
IC, COLLECTOR CURRENT
10s
1A
50s 150s 500s
Ic
5A
0,1A
20ms DC
Ic
0,01A 1V
0A 10Hz
100Hz
1kHz
10kHz
100kHz
10V
100V
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 600V, VGE = 0/+15V, RG = 81)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C;VGE=15V)
70W
15A
50W 40W 30W 20W 10W 0W 25C
IC, COLLECTOR CURRENT
Ptot, POWER DISSIPATION
60W
10A
5A
50C
75C
100C
125C
0A 25C
75C
125C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150C)
Power Semiconductors
4
Preliminary / Rev. 1 Sep-03
Preliminary TrenchStoP Series
IGW08T120
20A
20A
IC, COLLECTOR CURRENT
15V 15A 13V 11V 10A 9V 7V 5A
IC, COLLECTOR CURRENT
VGE=17V
VGE=17V 15V 15A 13V 11V 10A 9V 7V 5A
0A 0V 1V 2V 3V 4V 5V 6V
0A 0V 1V 2V 3V 4V 5V 6V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 150C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
20A
3,0V 2,5V 2,0V 1,5V 1,0V 0,5V 0,0V -50C
IC=15A
IC, COLLECTOR CURRENT
15A
IC=8A IC=5A IC=2.5A
10A
5A TJ=150C 25C 0A 0V 2V 4V 6V 8V 10V 12V
0C
50C
100C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V)
TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
Power Semiconductors
5
Preliminary / Rev. 1 Sep-03
Preliminary TrenchStoP Series
IGW08T120
td(off)
td(off) tf
t, SWITCHING TIMES
t, SWITCHING TIMES
100ns
tf
100 ns
td(on) 10ns tr
td(on) 10 ns
tr
1ns
5A
10A
15A
1 ns
5
50
100
150
200
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=150C, VCE=600V, VGE=0/15V, RG=81, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=150C, VCE=600V, VGE=0/15V, IC=8A, Dynamic test circuit in Figure E)
td(off)
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
7V 6V 5V 4V min. 3V 2V 1V 0V -50C max. typ.
t, SWITCHING TIMES
100ns tf td(on) tr
10ns
0C
50C
100C
150C
0C
50C
100C
150C
TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=8A, RG=81, Dynamic test circuit in Figure E)
TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.3mA)
Power Semiconductors
6
Preliminary / Rev. 1 Sep-03
Preliminary TrenchStoP Series
IGW08T120
*) Eon and Ets include losses due to diode recovery Ets*
*) Eon and Etsinclude losses due to diode recovery
Ets*
3,2 mJ
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
6,0mJ
2,8 mJ 2,4 mJ 2,0 mJ 1,6 mJ 1,2 mJ 0,8 mJ 0,4 mJ E* Eonoff
4,0mJ
Eoff* on
2,0mJ
Eoff* Eon
EEoff on*
0,0mJ
5A
10A
15A
0,0 mJ
5
50
100
150
200
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=150C, VCE=600V, VGE=0/15V, RG=81, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=150C, VCE=600V, VGE=0/15V, IC=8A, Dynamic test circuit in Figure E)
*) E on and E ts include losses due to diode recovery 2,5mJ
E ts *
*) Eon and Ets include losses due to diode recovery
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
3mJ
2,0mJ
1,5mJ
E* Eonoff E on Eoff*
2mJ Ets*
off 1mJ EEon*
1,0mJ
0,5mJ
Eon* Eoff 0,0mJ 50C 100C 150C 0mJ 400V 500V 600V 700V 800V
TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=8A, RG=81, Dynamic test circuit in Figure E)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ=150C, VGE=0/15V, IC=25A, RG=22, Dynamic test circuit in Figure E)
Power Semiconductors
7
Preliminary / Rev. 1 Sep-03
Preliminary TrenchStoP Series
IGW08T120
Ciss
1nF
VGE, GATE-EMITTER VOLTAGE
15V
240V 10V
960V
c, CAPACITANCE
100pF
Coss Crss
5V
0V
0nC
25nC
50nC
10pF 0V
10V
20V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC=8 A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz)
tSC, SHORT CIRCUIT WITHSTAND TIME
15s
IC(sc), short circuit COLLECTOR CURRENT
12V 14V 16V
75A
10s
50A
5s
25A
0s
0A
12V
14V
16V
18V
VGE, GATE-EMITTETR VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25C)
VGE, GATE-EMITTETR VOLTAGE Figure 20. Typical short circuit collector current as a function of gateemitter voltage (VCE 600V, Tj 150C)
Power Semiconductors
8
Preliminary / Rev. 1 Sep-03
Preliminary TrenchStoP Series
IGW08T120
VCE, COLLECTOR-EMITTER VOLTAGE
IC, COLLECTOR CURRENT
600V
VCE
30A
30A
600V
400V
20A
20A
400V
IC
10A 200V
200V
10A
0V
IC
0us 0.5us 1us 1.5us
VCE
0A 0A 0us 0V 0.5us 1us 1.5us
t, TIME Figure 21. Typical turn on behavior (VGE=0/15V, RG=81, Tj = 150C, Dynamic test circuit in Figure E)
t, TIME Figure 22. Typical turn off behavior (VGE=15/0V, RG=81, Tj = 150C, Dynamic test circuit in Figure E)
ZthJC, TRANSIENT THERMAL RESISTANCE
10 K/W D=0.5
0
0.2 0.1 0.05 0.02 0.01 single pulse
R,(K/W) 0.187 0.575 0.589 0.350
R1
, (s) 1.73*10-1 2.75*10-2 2.57*10-3 2.71*10-4
R2
10 K/W
-1
C1= 1/R1
C 2 = 2 /R 2
10 K/W 10s
-2
100s
1ms
10ms
100ms
tP, PULSE WIDTH Figure 23. IGBT transient thermal resistance (D = tp / T)
Power Semiconductors
9
Preliminary / Rev. 1 Sep-03
Preliminary TrenchStoP Series
IGW08T120
dimensions symbol
TO-247AC
[mm] min A B C D E F G H K L M N
P
[inch] max 5.28 2.51 2.29 1.32 2.06 3.18 min 0.1882 0.0902 0.0701 0.0429 0.0681 0.1051 0.8189 0.6161 0.2051 0.7799 0.1402 0.2409 max 0.2079 0.0988 0.0902 0.0520 0.0811 0.1252 0.8331 0.6358 0.2252 0.8142 0.1941 0.2449
4.78 2.29 1.78 1.09 1.73 2.67 20.80 15.65 5.21 19.81 3.560 6.12
0.76 max 21.16 16.15 5.72 20.68 4.930 6.22
0.0299 max
3.61
0.1421
Q
Power Semiconductors
10
Preliminary / Rev. 1 Sep-03
Preliminary TrenchStoP Series
IGW08T120
1
Tj (t) p(t)
r1
r2
2
n
rn
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit Leakage inductance L =180nH an d Stray capacity C =39pF.
Power Semiconductors
11
Preliminary / Rev. 1 Sep-03
Preliminary TrenchStoP Series
IGW08T120
Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 2001 All Rights Reserved. Attention please!
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For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).
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Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
12
Preliminary / Rev. 1 Sep-03

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