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| 01/99 B-35 IF3602 Dual N-Channel Silicon Junction Field-Effect Transistor Low-Noise, High Gain Amplifier Absolute maximum ratings = TA at 25C Reverse Gate Source Voltage & Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range - 20 V 10 mA 300 mW 4 mW/C - 65C to 200C At 25C free air temperature: Static Electrical Characteristics IF3602 Min Max Unit Process NJ3600L Test Conditions Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics V(BR)GSS IGSS VGS(OFF) IDSS - 20 - 0.35 30 Typ V - 0.5 -3 nA V mA IG = - 1 A, VDS = OV VGS = - 10V, VDS = OV VDS = 10V, ID = 0.5 nA VDS = 10V, VGS = OV Common Source Forward Transconductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Equivalent Short Circuit Input Noise Voltage gfs Ciss Crss eN 750 300 200 0.3 Max mS pF pF nV/Hz VDS = 10V, VGS = OV VDS = OV, VGS = - 4V VDS = OV, VGS = - 4V VDG = 3V, ID = 5 mA f = 1 kHz f = 1 MHz f = 1 MHz f = 100 Hz Differential Gate Source Voltage | VGS1 - VGS2 | 100 mV VDS = 10V, VGS = OV TO78 Package Dimensions in Inches (mm) Pin Configuration 1 Source, 2 Drain, 3 Gate, 4 Omitted, 5 Source, 6 Drain, 7 Gate, 8 Omitted www.interfet.com 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 |
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