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PD-2.510 rev. A 02/99 HEXFRED Features HFA200MD40D TM Ultrafast, Soft Recovery Diode V R = 400V V F(typ.) = 0.9V IF(AV) = 200A Qrr (typ.) = 330nC IRRM(typ.) = 8.1A trr(typ.) = 45ns di(rec)M/dt (typ.) = 270A/s Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Anode 1 AC Cathode 2 Isolated Base Description HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. TM Absolute Maximum Ratings (per Leg) Parameter VR IF @ TC = 25C IF @ TC = 100C IFSM EAS PD @ T C = 25C PD @ TC = 100C TJ TSTG Cathode-to-Anode Voltage Continuous Forward Current Continuous Forward Current Single Pulse Forward Current Non-Repetitive Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range TO-244AB (ISOLATED) Max. 400 172 83 1200 1.4 278 111 -55 to +150 Units V A mJ W C Thermal - Mechanical Characteristics Parameter RthJC RthCS Wt Junction-to-Case, Single Leg Conducting Junction-to-Case, Both Legs Conducting Case-to-Sink, Flat , Greased Surface Weight Mounting Torque Terminal Torque Vertical Pull 2 inch Lever Pull Min. 30 (3.4) 30 (3.4) Typ. 0.10 79 (2.8) Max. 0.45 0.23 40 (4.6) 40 (4.6) 80 35 Units C/W K/W g (oz) lbfin (Nm) lbfin Note: Limited by junction temperature L = 100H, duty cycle limited by max TJ 125C Mounting surface must be smooth, flat, free or burrs or other protrusions. Apply a thin even film or thermal grease to mounting surface. Gradually tighten each mounting bolt in 5-10 lbfin steps until desired or maximum torque limits are reached. Module 1 HFA200MD40D PD-2.510 rev. A 02/99 Electrical Characteristics (per Leg) @ TJ = 25C (unless otherwise specified) Parameter VBR VFM Cathode Anode Breakdown Voltage Max Forward Voltage Min. Typ. Max. Units 400 1.0 1.2 1.2 1.4 0.9 1.1 2.0 12 3.0 16 370 500 5.0 V V A mA pF nH Test Conditions I R = 100A I F = 100A IF = 200A See Fig. 1 IF = 100A, TJ = 125C VR = VR Rated See Fig. 2 TJ = 125C, VR = 320V VR = 200V See Fig. 3 From top of terminal hole to mounting plane IRM CT LS Max Reverse Leakage Current Junction Capacitance Series Inductance Dynamic Recovery Characteristics (per Leg) @ TJ = 25C (unless otherwise specified) Parameter trr trr1 trr2 IRRM1 IRRM2 Q rr1 Q rr2 di(rec)M/dt1 di(rec)M/dt2 Reverse Recovery Time Min. Typ. Max. Units 45 81 260 8.1 17 330 2200 290 270 Test Conditions Peak Recovery Current Reverse Recovery Charge Peak Rate of Fall of Recovery Current During tb I F = 1.0A, dif /dt = 200A/s, VR = 30V 120 ns TJ = 25C See Fig. 390 TJ = 125C 5 IF = 100A 15 TJ = 25C See Fig. A 30 TJ = 125C 6 VR = 200V 890 TJ = 25C See Fig. nC 6000 TJ = 125C 7 dif/dt = 200A/s A/s TJ = 25C See Fig. TJ = 125C 8 80.01 (3.150) 40.26 (1.585) 39.75 (1.565) 20.32 (0.800) 17.78 (0.700) 7.49 (0.295) 6.99 (0.275) DIA. (2 PLCS.) 34.925 (1.375) REF. 63.50 (2.500) 60.96 (2.400) LEAD ASSIGNMENTS 1 - ANODE 2 - CATHODE 3 - ANODE 1/4-20 SLOTTED HEX 1 23.55 (0.927) 20.42 (0.804) 2 3 OUTLINE TO-244AB (ISOLATED) Dimensions in Millimeters and (Inches) 15.75 (0.620) 14.99 (0.590) 92.71 (3.650) 90.17 (3.550) 3.35 (0.132) 3.02 (0.119) 2 HFA200MD40D PD-2.510 rev. A 02/99 1000 100000 Reverse Current - I R (A) 10000 1000 100 10 1 0.1 0 T = 150C J T = 125C J Instantaneous Forward Current - IF (A) 100 TJ = 150C TJ = 125C TJ = 25C TJ = 25C 100 200 300 400 Junction Capacitance - C T (pF) 10 Fig. 2 - Typical Reverse Current vs. Reverse Voltage, (per Leg) 10000 Reverse Voltage - VR (V) A TJ = 25C 1000 1 0.4 0.8 1.2 1.6 2.0 Forward Voltage Drop - V FM (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current, (per Leg) 100 1 10 100 1000 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage, (per Leg) 1 Thermal Impedance - Z thJC (K/W ) 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 P DM 0.01 Single Pulse (Thermal Resistance) 2 Notes: 1. Duty factor D = t / t 12 t 1 t 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 10 100 0.001 0.00001 t 1, Rectangular Pulse Duration (Seconds) Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics, (per Leg) 3 HFA200MD40D PD-2.510 rev. A 02/99 500 100 VR = 200V TJ = 125C TJ = 25C 400 VR = 200V TJ = 125C TJ = 25C IF = 200A I F = 200A IF = 100A I IRRM - (A) t rr - (ns) 300 IF = 70A I F = 100A 10 I F = 70A 200 100 0 100 di f /dt - (A/s) 1000 1 100 di f /dt - (A/s) 1000 Fig. 5 - Typical Reverse Recovery vs. dif/dt, (per Leg) 6000 Fig. 6 - Typical Recovery Current vs. dif/dt, (per Leg) 10000 VR = 200V TJ = 125C TJ = 25C VR = 200V TJ = 125C TJ = 25C IF = 200A 4000 Q RR - (nC) I F = 100A I F = 70A di(rec)M/dt - (A/s) I F = 70A 1000 2000 IF = 100A I F = 200A 0 100 di f /dt - (A/s) 1000 100 100 di f /dt - (A/s) 1000 Fig. 7 - Typical Stored Charge vs. dif/dt, (per Leg) 4 Fig. 8 - Typical di(rec)M /dt vs. dif/dt, (per Leg) HFA200MD40D PD-2.510 rev. A 02/99 3 IF trr ta tb 4 REVERSE RECOVERY CIRCUIT V R = 200V 0 Q rr I RRM 2 0.5 I RRM di(rec)M/dt 0.75 I RRM 5 0.01 L = 70H D.U.T. D IRFP250 S 1 di f /dt 4. Qrr - Area under curve defined by trr and IRRM trr X IRRM Qrr = 2 5. di(rec)M/dt - Peak rate of change of current during tb portion of trr dif/dt ADJUST G 1. dif /dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through 0.75 I RRM and 0.50 IRRM extrapolated to zero current Fig. 9 - Reverse Recovery Parameter Test Circuit L = 100H HIGH-SPEED SWITCH Rg = 25 ohm CURRENT MONITOR FREE-WHEEL DIODE + Vd = 50V Fig. 10 - Reverse Recovery Waveform and Definitions I L(PK) DUT DECAY TIME V (AVAL) V R(RATED) Fig. 11 - Avalanche Test Circuit and Waveforms WORLD HEADQUARTERS: EUROPEAN HEADQUARTERS: IR CANADA: IR GERMANY: IR ITALY: IR FAR EAST: IR SOUTHEAST ASIA: IR TAIWAN: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332. Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408. 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801. Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933. Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220. K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086. 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630. 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936. http://www.irf.com Fax-On-Demand: +44 1883 733420 Data and specifications subject to change without notice. 5 |
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