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GP401LSS18
GP401LSS18
Powerline N-Channel Single Switch Low Loss IGBT Module Preliminary Information
DS5288-1.3 January 2000
The GP401LSS18 is a single switch 1800V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low power loss, the module is suitable for a variety of high voltage applications in motor drives and power conversion. The high impedance gate simplifies gate drive considerations enabling operation directly from low power control circuitry. Fast switching times allow high frequency operation making the device suitable for the latest drive designs employing pwm and high frequency switching. The IGBT has a wide reverse bias safe operating area (RBSOA) for ultimate reliability in demanding applications. These modules incorporate electrically isolated base plates and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. The powerline range of high power modules includes dual and single switch configurations with a range of current and voltage capabilities to match customer system demands. Typical applications include dc motor drives, ac pwm drives, main traction drives and auxiliaries, large ups systems and resonant inverters.
4 5 3
VCES VCE(sat) IC70 IC(PK)80 IC25
KEY PARAMETERS 1800V (typ) 2.6V (max) 400A (max) 800A (max) 600A
2
1
FEATURES
s n - Channel s Enhancement Mode s High Input Impedance s Optimised For High Power High Frequency Operation s Isolated Base s Ultra Low VCE(sat) s 400A Per Module
Module outline type code: L (See package details for further information) Fig.1 Electrical connections - (not to scale)
2(E)
5(E1) 3(G1)
1(C) 4(C1)
APPLICATIONS
s High Power Switching s Motor Control s Inverters s Traction Systems s Lower Loss Systems Retrofits
Fig.2 Single switch circuit diagram
ORDERING INFORMATION
Order As: GP401LSS18 Note: When ordering, please use the complete part number.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/11
GP401LSS18
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability. Tcase = 25C unless stated otherwise. Symbol VCES VGES IC IC(PK) Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current DC, Tcase = 25C DC, Tcase = 70C 1ms, Tcase = 80C (Transistor) Pmax Visol Max. power dissipation Isolation voltage Tcase = 25C (Transistor) Commoned terminals to base plate. AC RMS, 1 min, 50Hz VGE = 0V Test Conditions Max. 1800 20 600 400 800 2980 4000 Units V V A A A W V
THERMAL AND MECHANICAL RATINGS
Symbol Rth(j-c) Rth(j-c) Rth(c-h) Parameter Thermal resistance - transistor (per arm) Thermal resistance - diode (per arm) Thermal resistance - case to heatsink (per module) Test Conditions DC junction to case DC junction to case Mounting torque 5Nm (with mounting grease) Tj Junction temperature Transistor Diode Tstg Storage temperature range Screw torque Mounting - M6 Electrical connections - M4 -40 125 125 125 5 2 C C C Nm Nm Min. Max. 42 80 15 Units C/kW C/kW C/kW
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 2/11
GP401LSS18
ELECTRICAL CHARACTERISTICS
Tcase = 25C unless stated otherwise. Symbol ICES Parameter Collector cut-off current Test Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125C IGES VGE(TH) VCE(sat) Gate leakage current Gate threshold voltage Collector-emitter saturation voltage VGE = 20V, VCE = 0V IC = 40mA, VGE = VCE VGE = 15V, IC = 400A VGE = 15V, IC = 400A, , Tcase = 125C IF IFM VF Diode forward current Diode maximum forward current Diode forward voltage DC, Tcase = 55C tp = 1ms, Tcase = 80C IF = 400A IF = 400A, Tcase = 125C Cies LM Input capacitance Module inductance VCE = 25V, VGE = 0V, f = 1MHz Min. 4 Typ. 2.6 3.3 2.2 2.3 45 15 Max. 1 10 2 7.5 3.2 4.0 400 800 2.5 2.6 Units mA mA A V V V A A V V nF nH
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/11
GP401LSS18
ELECTRICAL CHARACTERISTICS
For definition of switching waveforms, refer to figure 3 and 4. Tcase = 25C unless stated otherwise. Symbol td(off) tf EOFF td(on) tr EON Qrr Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge IF = 400A, VR = 50% VCES, dIF/dt = 2500A/s Tcase = 25C unless stated otherwise. Symbol td(off) tf EOFF td(on) tr EON Qrr Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge IF = 400A, VR = 50% VCES, dIF/dt = 2500A/s Test Conditions IC = 400A VGE = 15V VCE = 900V RG(ON) = RG(OFF) = 4.3 L ~ 100nH Min. Typ. 1010 390 180 660 310 210 90 Max. 1200 500 230 800 400 260 115 Units ns ns mJ ns ns mJ C Test Conditions IC = 400A VGE = 15V VCE = 900V RG(ON) = RG(OFF) = 4.3 L ~ 100nH Min. Typ. 900 280 150 500 200 140 65 Max. 1100 350 200 650 400 180 85 Units ns ns mJ ns ns mJ C
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 4/11
GP401LSS18
SWITCHING DEFINITIONS
+15V 10% 0V -15V
t4 + 5s
Vge
Eon =
V
t1
ce c
.I dt
IC 90%
td(on) = t2 - t1 tr = t3 - t2
10%
Vce
t1
t2
t3
t4
Fig.3 Definition of turn-on switching times
+15V 90% 0V -15V
t7 + 20s
Vge
Eoff =
V
t5
ce c
.I dt
90%
td(off) = t6 - t5
10%
tf = t7 - t6
IC
Vce
t5
t6
t7
Fig.4 Definition of turn-off switching times
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 5/11
GP401LSS18
TYPICAL CHARACTERISTICS
Vge = 20/15/12/10V 800 Common emitter Tcase = 125C
Vge = 20/15/12/10V 800 700 600
Collector current, Ic - (A)
Collector current, Ic - (A)
Common emitter Tcase = 25C
700 600 500 400 300 200 100 0 0
500 400 300 200 100 0 0
1.0 2.0 3.0 4.0 Collector-emitter voltage, Vce - (V)
5.0
1.0
2.0 3.0 4.0 5.0 Collector-emitter voltage, Vce - (V)
6.0
Fig.5 Typical output characteristics
Fig.6 Typical output characteristics
400 350 300 Tcase = 25C VGE = 15V VCE = 900V
500 450 400 Tcase = 125C VGE = 15V VCE = 900V
Turn-on energy, EON - (mJ)
Turn-on energy, EON - (mJ)
350 300 250 B 200 C 150 100 A
250 A 200 150 B C 100 50 0 0 A: Rg = 13 B: Rg = 6.8 C: Rg = 4.3 50 100 150 200 250 300 Collector current, IC - (A) 350 400
50 0 0
A: Rg = 13 B: Rg = 6.8 C: Rg = 4.3 50 100 150 200 250 300 Collector current, IC - (A) 350 400
Fig.7 Typical turn-on energy vs collector current
Fig.8 Typical turn-on energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 6/11
GP401LSS18
200 175 150
Turn-off energy, EOFF - (mJ)
250
Tcase = 25C VGE = 15V VCE = 900V
A
225 200
Turn-off energy, EOFF - (mJ)
Tcase = 125C VGE = 15V VCE = 900V
A B C
B C 125 100 75
175 150 125 100 75 50
50 25 0 0 A: Rg = 13 B: Rg = 6.8 C: Rg = 4.3 50 100 150 250 300 200 Collector current, IC - (A) 350 400
25 0 0
A: Rg = 13 B: Rg = 6.8 C: Rg = 4.3 50 100 200 150 250 300 Collector current, IC - (A) 350 400
Fig.9 Typical turn-off energy vs collector current
Fig.10 Typical turn-off energy vs collector current
60 VGE = 15V VCE = 900V Rg = 4.3 Tcase = 125C Switching times, ts - (ns)
1200 td(off) 1000 Tcase = 125C VGE = 15V VCE = 900V Rg = 4.3 td(on) 600 tf
50
Diode turn-off energy, Eoff(diode) - (mJ)
40
800
30
Tcase = 25C
20
400
10
200
tr
0 0 50 100 150 200 250 300 350 400 Collector current, IT - (A)
0 0
50
100
150 200 250 300 Collector current, IC - (A)
350
400
Fig.11 Typical diode reverse recovery charge vs collector current
Fig.12 Typical switching characteristics
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 7/11
GP401LSS18
800 700 Tj = 25C 600
Foward current, IF - (A)
1000 900 800
Collector current, IC - (A)
700 600 500 400 300 200 Tcase = 125C Vge = 15V Rg(min) = 4.3 Rg(min) : Minimum recommended value
500 Tj = 125C 400 300 200 100 0 0
100 0 0
0.5
2.0 1.0 1.5 2.5 Foward voltage, VF - (V)
3.0
3.5
1200 400 800 1600 Collector-emitter voltage, Vce - (V)
2000
Fig.13 Diode typical forward characteristics
Fig.14 Reverse bias safe operating area
10000
100
Transient thermal impedance, Zth (j-c) - (C/kW )
Diode Transistor
1000
Collector current, IC - (A)
IC max. (single pulse)
10
IC
100
m .D ax C (c on tin uo us
50s
100s
)
1
10
tp = 1ms
1 1 10 100 1000 Collector-emitter voltage, Vce - (V) 10000
0.1
1
10
100 Pulse width, tp - (ms)
1000
10000
Fig.15 Forward bias safe operating area
Fig.16 Transient thermal impedance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 8/11
GP401LSS18
900 800
Inverter phase current, IC(PK) - (A)
700
PWM Sine Wave Power Factor = 0.9, Modulation Index =1
600
700
DC collector current, IC - (A)
500
600 500 400 300 200 100 0 1 fmax - (kHz) 10 20 Conditions: Tj = 125C, Tcase = 75C Rg = 4.3, VCC = 900V
400
300
200
100
0 0
20
40 60 80 100 120 Case temperature, Tcase - (C)
140
160
Fig.17 3-Phase inverter operating frequency
Fig.18 DC current rating vs case temperature
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 9/11
GP401LSS18
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
46.5 4x O6.5 3.5x6 4 27 6x5.5 16 46.5
1 5
61.4 48 40
3
2
24 2x M6 3x M4
20
29
23
5 106.4
Nominal weight: 270g Recommeded fixings for mounting: M6 Recommended mounting torque: 5Nm (44lbs.ins) Recommended torque for electrical connections (M4): 2Nm (17lbs.ins) Module outline type code: L
ASSOCIATED PUBLICATIONS
Title Electrostatic handling precautions An introduction to IGBTs IGBT ratings and characteristics Heatsink requirements for IGBT modules Calculating the junction temperature of power semiconductors Gate drive considerations to maximise IGBT efficiency Parallel operation of IGBTs - punch through vs non-punch through characteristics Guidance notes for formulating technical enquiries Principle of rating parallel connected IGBT modules Short circuit withstand capability in IGBTs Driving high power IGBTs with concept gate drivers Application Note Number AN4502 AN4503 AN4504 AN4505 AN4506 AN4507 AN4508 AN4869 AN5000 AN5167 AN5190
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 10/11
36max
20
GP401LSS18
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs).
HEATSINKS
Power Assembly has it's own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the factory.
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER IC. Unit 7 - 58 Antares Drive, Nepean, Ontario, Canada K2E 7W6. Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50 Germany Tel: 07351 827723 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2000 Publication No. DS5288-1.3 Issue No. 1.3 January 2000 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 11/11

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