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GL4910
GL4910
s Features
1. Small spot light diameter for easy beam diaphragming (*Apparent emission diameter : TYP. 0.32 mm)
Side View Type Infrared Emitting Diode for Camera AF (Automatic Focusing)
s Outline Dimensions
4.0 0.2 0.8
Gate burr
(Unit : mm)
2.0 0.2
0.8 Chip center (2.5 ) R1.75 0.1
1.5 8
0.5
Pink
0.4 MAX. 0.8
2. Uniform emission intensity on chip emitting surface 3. Low peak forward voltage type (Peak forward voltage V FM : TYP. 1.7V)
* Expansion range on lens surface of infrared emitted from chips
8 transparent 1 8
Solder dipping range
2.15
5.0 0.2
epoxy resin
0.8
2- 0.28 2- 0.77 0.3 MIN.
(Chip position 8 : 2.65)
s Applications
1. Cameras
17.15 + 1.5 - 1.0
2 - 0.45 + 0.2 - 0.1 1 2.54 2
2 - 0.4 + -
0.2 0.1
2
1 Cathode 2 Anode
3.75
0.2
8
8
8
8
* ( ) : Reference dimensions * Tolerance : 0.15 mm
Parameter Forward current *1 Peak forward current Reverse voltage Operating temperature Storage temperature *2 Soldering temperature
Symbol IF IFM VR Topr Tstg Tsol
Rating 50 1 4 - 25 to + 60 - 40 to + 85 260
Unit mA A V C C C
120 s
IFM 500 s 32ms (64 pulses) 1s (1 cycle)
Soldering area
*1 30,00 cycles max. on pulse conditions shown in the right drawing *2 For 5 seconds at the position of 2.15 mm from the resin edge
" In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device."
2.15mm
s Absolute Maximum Ratings
(Ta=25C)
GL4910
s Electro-optical Characteristics
Parameter Forward voltage Peak forward voltage Reverse current Radiant flux Peak emission wavelength Half intensity wavelength Half intensity angle Terminal capacitance
*3 Emission output to effective angle 25
(Ta=25 C) Symbol VF V FM IR *3 e p Ct Conditions IF = 50mA IFM = 300mA, t = 10ms VR = 1V IFM = 300mA, t = 10ms IF = 50mA IF = 50mA IF = 50mA VR = 0, f = 1MHZ MIN. 4.2 TYP. 1.55 1.7 9 850 35 32 80 MAX. 1.7 1.95 100 Unit V V A mW nm nm pF
Fig. 1 Forward Current vs. Ambient Temperature
60
Fig. 2 Peak Forward Current vs. Duty Ratio
Pulse width<= 100 s Ta= 25C
(mA) Peak forward current I
FM
50
Forward current I F (mA)
1000
40
30
100
20
10
10
0 - 25
0
25
50 60
75
100
125
1 10
-4
10
-3
10
-2
10
-1
1
Ambient temperature Ta (C)
Duty ratio
GL4910
Fig. 3 Spectral Distribution
100 I F =50mA Ta=25C
Fig. 4 Peak Emission Wavelength vs. Ambient Temperature
900 I F =const
Relative radiant intensity (%)
80
Peak emission wavelength p (nm)
875
60
850
40
825
20
0 720 740 760 780 800 820 840 860 880 900 920 940 960
800 - 25
0
25
50
75 85
Wavelength (nm)
Ambient temperature T a (C)
Fig. 5 Forward Current vs. Forward Voltage
1000
Fig. 6 Relative Radiant Flux vs. Ambient Temperature
10 I F =const
Forward current I F (mA)
100
50C 60C 10
-25C 0C 25C
Relative radiant flux
2.5
1
1 0
0.5
1
1.5
2
0.1
- 25
0
25
50
75
85
Forward voltage V F (V)
Ambient temperature T a (C)
Fig. 7 Radiant Flux vs. Forward Current
100 Ta=25C
Fig. 8 Relative Radiant Intensity vs. Distance
100 Ta=25C
Radiant flux e (mW)
10
Relative radiant intensity (%)
10
1
Pulse (pulse width <= 100 s)
1
0.1
0.01 1
10
100
1000
0.1 0.1
1
10
100
Forward current I F (mA)
Distance to detector (mm)
GL4910
Fig. 9 Radiation Diagram
- 20 - 30 - 10 0 100 10
(Ta = 25C )
20 30
Relative radiant intensity (%)
80
- 40
60
40
- 50 - 60 - 70 - 80 - 90
50 40 60 20 70 80 0 90
Angular displacement
q Please refer to the chapter "Precautions for Use". (Page 78 to 93)

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