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| MITSUBISHI Pch POWER MOSFET FY3ABJ-03 HIGH-SPEED SWITCHING USE FY3ABJ-03 OUTLINE DRAWING Dimensions in mm 6.0 4.4 5.0 1.8 MAX. 0.4 1.27 SOURCE GATE DRAIN No-contact q 4V DRIVE q VDSS ............................................................................... -30V q rDS (ON) (MAX) ............................................................. 70m q ID ......................................................................................... -3A SOP-8 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg -- (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings -30 20 -3 -21 -3 -1.7 -6.8 1.8 -55 ~ +150 -55 ~ +150 0.07 Unit V V A A A A A W C C g Sep.1998 L = 10H MITSUBISHI Pch POWER MOSFET FY3ABJ-03 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-a) trr Parameter Drain-source breakdown voltage (Tch = 25C) Test conditions ID = -1mA, VDS = 0V VGS = 20V, VDS = 0V VDS = -30V, VGS = 0V ID = -1mA, VDS = -10V ID = -3A, VGS = -10V ID = -1.5A, VGS = -4V ID = -3A, VGS = -10V ID = -3A, VDS = -10V VDS = -10V, VGS = 0V, f = 1MHz Limits Min. -30 -- -- -1.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- -2.0 57 102 -0.17 8 2100 340 195 20 20 135 50 -0.77 -- 70 Max. -- 0.1 -0.1 -2.5 70 160 -0.21 -- -- -- -- -- -- -- -- -1.20 69.4 -- Unit V A mA V m m V S pF pF pF ns ns ns ns V C/W ns Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = -15V, ID = -1.5A, VGS = -10V, RGEN = RGS = 50 IS = -1.7A, VGS = 0V Channel to ambient IS = -1.7A, dis/dt = 50A/s PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 2.5 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA -102 -7 -5 -3 -2 -7 -5 -3 -2 -7 -5 -3 -2 -7 -5 -3 -2 2.0 -101 tw = 1ms 10ms 100ms 1.5 -100 Tc = 25C Single Pulse 1.0 0.5 -10-1 DC 0 0 50 100 150 200 -10-2 -2 -10 -2 -3 -5-7-10-1-2 -3 -5-7 -100 -2 -3 -5-7 -101 -2 -3 -5-7 -102 DRAIN-SOURCE VOLTAGE VDS (V) CASE TEMPERATURE TC (C) OUTPUT CHARACTERISTICS (TYPICAL) -50 PD = 1.8W VGS = -10V -8V OUTPUT CHARACTERISTICS (TYPICAL) -20 VGS = -10V PD = 1.8W -8V -6V -5V DRAIN CURRENT ID (A) -40 DRAIN CURRENT ID (A) Tc = 25C Pulse Test -6V -16 -4V -30 -5V -12 -20 -8 Tc = 25C Pulse Test -3V -10 -4V -4 0 0 -1.0 -2.0 -3.0 -4.0 -5.0 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Sep.1998 MITSUBISHI Pch POWER MOSFET FY3ABJ-03 HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) -5.0 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (m) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) Tc = 25C Pulse Test ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 200 Tc = 25C Pulse Test VGS = -4V -4.0 160 -3.0 120 -2.0 ID = -24A 80 -10V -1.0 -6A -3A -10A 40 0 -10-1 -2 -3 -5-7 -100 -2 -3 -5-7 -101 -2 -3 -5 DRAIN CURRENT ID (A) 0 0 -2 -4 -6 -8 -10 GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) -20 Tc = 25C VDS = -10V Pulse Test FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL) 102 7 5 VDS = 10V Pulse Test DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) -16 3 2 Tc =25C 75C 125C -12 101 7 5 3 2 VDS = -10V Pulse Test -8 -4 0 0 -2 -4 -6 -8 -10 100 -5 -7-100 -2 -3 -5 -7-101 -2 -3 -5 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 3 2 Ciss 3 2 SWITCHING CHARACTERISTICS (TYPICAL) td(off) CAPACITANCE Ciss, Coss, Crss (pF) 103 7 5 3 2 Coss Crss SWITCHING TIME (ns) 100 7 5 3 2 tf tr td(on) 10-1 7 5 3 2 Tch = 25C VDD = -15V VGS = -10V RGEN = RGS = 50 102 7 5 3 2 VGS = 0V f = 1MHZ Tch = 25C -5-7-10-1 -2 -3 -5-7-100 -2 -3 -5-7-101 -2 -3 10-2 0 -10 -2 -3 -5 -7 -101 -2 -3 -5 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Sep.1998 MITSUBISHI Pch POWER MOSFET FY3ABJ-03 HIGH-SPEED SWITCHING USE GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) -10 Tch = 25C Pulse Test ID = -3A SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) -20 SOURCE CURRENT IS (A) VGS = 0V Pulse Test -8 -16 Tc = 25C 75C 125C -6 VDS = -10V -20V -25V -12 -4 -8 -2 -4 0 0 8 16 24 32 40 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) 7 5 4 3 2 VGS = -10V ID = -3A Pulse Test THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) -2.0 VDS = -10V ID = -1mA -1.6 -1.2 100 7 5 4 3 2 -0.8 -0.4 10-1 -50 0 50 100 150 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) TRANSIENT THERMAL IMPEDANCE Zth (ch -a) (C/ W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = -1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 D = 1.0 3 0.5 2 101 0.2 7 5 0.1 3 0.05 2 1.2 1.0 100 7 5 3 2 7 5 3 2 0.02 0.01 Single Pulse PDM tw T D= tw T 0.8 0.6 10-1 0.4 -50 0 50 100 150 10-2 10-4 2 3 5710-3 2 3 5710-2 2 3 5710-1 2 3 57100 2 3 57101 2 3 57102 2 3 57103 PULSE WIDTH tw (s) Sep.1998 CHANNEL TEMPERATURE Tch (C) |
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