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| FQB6N60C / FQI6N60C QFET FQB6N60C / FQI6N60C 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. (R) Features * * * * * * 5.5A, 600V, RDS(on) = 2.0 @VGS = 10 V Low gate charge ( typical 16 nC) Low Crss ( typical 7 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! G S D2-PAK FQB Series I2-PAK GDS FQI Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) Drain Current - Pulsed (Note 1) FQB6N60C / FQI6N60C 600 5.5 3.3 22 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/C C C 5.5 * 3.3 * 22 * 300 5.5 12.5 4.5 125 1.0 -55 to +150 300 Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol RJC RJA RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient* Thermal Resistance, Junction-to-Ambient Typ Max 1.0 40 62.5 Units C/W C/W C/W * When mounted on the minimum pad size recommended (PCB Mount) (c)2004 Fairchild Semiconductor Corporation Rev. A, March 2004 FQB6N60C / FQI6N60C Electrical Characteristics Symbol Parameter TC = 25C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 600 ------0.6 ------1 10 100 -100 V V/C A A nA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 A VGS = 10 V, ID = 2.75 A VDS = 40 V, ID = 2.75 A (Note 4) 2.0 --- -1.7 4.8 4.0 2.0 -- V S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---620 65 7 810 85 10 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 480 V, ID = 5.5A, VGS = 10 V (Note 4, 5) VDD = 300 V, ID = 5.5A, RG = 25 (Note 4, 5) -------- 15 45 45 45 16 3.5 6.5 40 100 100 100 20 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 5.5 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 5.5 A, dIF / dt = 100 A/s (Note 4) ------ ---310 2.1 5.5 22 1.4 --- A A V ns C Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 18.2mH, IAS = 5.5 A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 5.5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2004 Fairchild Semiconductor Corporation Rev. A, March 2004 FQB6N60C / FQI6N60C Typical Characteristics 10 1 ID, Drain Current [A] 10 0 ID, Drain Current [A] VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : 10 1 150 C -55 C 10 0 o o 25 C o 10 -1 Notes : 1. 250 s Pulse Test 2. TC = 25 Notes : 1. VDS = 40V 2. 250 s Pulse Test 10 -2 10 -1 10 0 10 1 10 -1 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 6 RDS(ON) [ ], Drain-Source On-Resistance VGS = 10V 4 3 IDR, Reverse Drain Current [A] 5 10 1 10 0 2 VGS = 20V 150 25 Notes : 1. VGS = 0V 2. 250s Pulse Test -1 1 Note : TJ = 25 0 0 2 4 6 8 10 12 14 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 12 1000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10 VGS, Gate-Source Voltage [V] VDS = 120V VDS = 300V 800 Capacitances [pF] Ciss 8 VDS = 480V 600 Coss 400 Note ; 1. VGS = 0 V 2. f = 1 MHz 6 4 200 Crss 2 Note : ID = 5.5A 0 -1 10 10 0 10 1 0 0 4 8 12 16 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics (c)2004 Fairchild Semiconductor Corporation Rev. A, March 2004 FQB6N60C / FQI6N60C Typical Characteristics (Continued) 1.2 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 2.5 A 0.9 Notes : 1. VGS = 0 V 2. ID = 250 A 0.5 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature Operation in This Area is Limited by R DS(on) 10 1 100 s 1 ms 5 ID, Drain Current [A] 10 0 ID, Drain Current [A] 10 3 10 ms 100 ms DC 4 3 2 10 -1 Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse o 1 10 -2 10 0 10 1 10 2 0 25 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature 10 0 D = 0 .5 Z JC(t), Thermal Response 0 .2 10 -1 0 .1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e N o tes : 1 . Z JC (t) = 1.00 /W M ax. 2 . D uty F actor, D = t1 /t 2 3 . T JM - T C = P D M * Z JC (t) PDM t1 t2 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a ve P u lse D ura tio n [sec] Figure 11. Transient Thermal Response Curve (c)2004 Fairchild Semiconductor Corporation Rev. A, March 2004 FQB6N60C / FQI6N60C Gate Charge Test Circuit & Waveform 50K 12V 200nF 300nF Same Type as DUT VDS VGS 10V Qgs Qg VGS Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG 10V VGS RL VDD VDS 90% DUT VGS 10% td(on) t on tr td(off) t off tf Unclamped Inductive Switching Test Circuit & Waveforms L VDS ID RG 10V tp BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD ID (t) VDD tp DUT VDS (t) Time (c)2004 Fairchild Semiconductor Corporation Rev. A, March 2004 FQB6N60C / FQI6N60C Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG Same Type as DUT VDD VGS * dv/dt controlled by RG * ISD controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop (c)2004 Fairchild Semiconductor Corporation Rev. A, March 2004 FQB6N60C / FQI6N60C Package Dimensions D2-PAK (0.40) 9.90 0.20 4.50 0.20 1.30 -0.05 +0.10 1.20 0.20 9.20 0.20 15.30 0.30 1.40 0.20 2.00 0.10 0.10 0.15 2.54 0.30 9.20 0.20 Rev. A, March 2004 2.40 0.20 4.90 0.20 (0.75) 1.27 0.10 2.54 TYP 0.80 0.10 2.54 TYP 10.00 0.20 (8.00) (4.40) 0 ~3 +0.10 0.50 -0.05 10.00 0.20 15.30 0.30 (1.75) (2XR0.45) 0.80 0.10 Dimensions in Millimeters (c)2004 Fairchild Semiconductor Corporation 4.90 0.20 (7.20) FQB6N60C / FQI6N60C Package Dimensions (Continued) I2-PAK 9.90 0.20 (0.40) 4.50 0.20 +0.10 1.30 -0.05 1.20 0.20 9.20 0.20 MAX 3.00 (1.46) 13.08 0.20 (0.94) 1.27 0.10 1.47 0.10 0.80 0.10 10.08 0.20 MAX13.40 (4 ) 5 2.54 TYP 2.54 TYP 0.50 -0.05 +0.10 2.40 0.20 10.00 0.20 Dimensions in Millimeters (c)2004 Fairchild Semiconductor Corporation Rev. A, March 2004 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACT Quiet SeriesTM ActiveArrayTM FAST BottomlessTM FASTrTM CoolFETTM FPSTM CROSSVOLTTM FRFETTM DOMETM GlobalOptoisolatorTM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM FACTTM i-LoTM Across the board. Around the world.TM The Power Franchise Programmable Active DroopTM DISCLAIMER ImpliedDisconnectTM PACMANTM POPTM ISOPLANARTM Power247TM LittleFETTM MICROCOUPLERTM PowerSaverTM PowerTrench MicroFETTM QFET MicroPakTM QSTM MICROWIRETM QT OptoelectronicsTM MSXTM Quiet SeriesTM MSXProTM RapidConfigureTM OCXTM RapidConnectTM OCXProTM SILENT SWITCHER OPTOLOGIC SMART STARTTM OPTOPLANARTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I10 |
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