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| FQA13N50CF 500V N-Channel MOSFET FRFET FQA13N50CF 500V N-Channel MOSFET Features * 15A, 500V, RDS(on) = 0.48 @VGS = 10 V * Low gate charge (typical 43 nC) * Low Crss (typical 20pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability * Fast recovery body diode (typical 100ns) TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D ! " G! !" " " TO-3P GDS FQA Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25C) - Continuous (TC = 100C) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds (Note 2) (Note 1) (Note 1) (Note 3) Parameter FQA13N50CF 500 15 9.5 60 30 860 15 21.8 4.5 218 1.56 -55 to +150 300 Units V A A A V mJ A mJ V/ns W W/C C C Thermal Characteristics Symbol RJC RJS RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient Typ -0.24 -- Max 0.58 -40 Units C/W C/W C/W (c)2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQA13N50CF Rev. A FQA13N50CF 500V N-Channel MOSFET Package Marking and Ordering Information Device Marking FQA13N50CF Device FQA13N50CF Package TO-3P Reel Size Tape Width Quantity Electrical Characteristics Symbol Off Characteristics BVDSS BVDSS/ TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr Notes: TC = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Test Conditions VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 7.5 A VDS = 40 V, ID = 7.5 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz (Note 4) Min 500 ------ Typ -0.5 ----- Max Units --1 10 100 -100 V V/C A A nA nA Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse On Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance 2.0 ---0.43 15 4.0 0.48 -V S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance ---1580 180 20 2055 235 25 pF pF pF Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 400 V, ID = 15 A, VGS = 10 V (Note 4, 5) (Note 4, 5) VDD = 250 V, ID = 15 A, RG = 25 -------- 25 100 130 100 43 7.5 18.5 60 210 270 210 56 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 15 A VGS = 0 V, IS = 15 A, dIF / dt = 100 A/s (Note 4) ------ ---100 2.1 15 60 1.4 --- A A V ns C 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 5.6mH, IAS = 15A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 15A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature 2 FQA13N50CF Rev. A www.fairchildsemi.com FQA13N50CF 500V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : 10 1 10 1 ID, Drain Current [A] ID, Drain Current [A] 150C -55C 25C 10 0 10 0 Notes : 1. 250 Pulse Test 2. TC = 25C Notes : 1. VDS = 40V 10 -1 10 -1 -1 2. 250s Pulse Test 10 10 0 10 1 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue RDS(ON) [], Drain-Source On-Resistance IDR, Reverse Drain Current [A] 1.5 VGS = 10V 10 1 1.0 10 0 VGS = 20V 0.5 Note : TJ = 25C 150C 25C 10 -1 Notes : 1. VGS = 0V 2. 250s Pulse Test 0 5 10 15 20 25 30 35 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics 3000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Figure 6. Gate Charge Characteristics 12 VDS = 100V 10 Ciss VGS, Gate-Source Voltage [V] 2500 Crss = Cgd VDS = 250V VDS = 400V Capacitance [pF] 2000 8 1500 Coss 6 1000 Notes ; 1. VGS = 0 V 4 Crss 500 2. f = 1 MHz 2 Note : ID = 15A 0 -1 10 10 0 10 1 0 0 10 20 30 40 50 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] 3 FQA13N50CF Rev. A www.fairchildsemi.com FQA13N50CF 500V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 1.2 3.0 BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.1 RDS(ON), (Normalized) Drain-Source On-Resistance 2.5 2.0 1.0 1.5 1.0 0.9 Notes : 1. VGS = 0 V 2. ID = 250 A 0.5 Notes : 1. VGS = 10 V 2. ID = 7.5 A 0.8 -100 -50 0 50 100 150 200 0.0 -100 -50 0 50 100 150 200 TJ, Junction Temperature [C] TJ, Junction Temperature [C] Figure 9-1. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 16 10 2 Operation in This Area is Limited by R DS(on) 14 ID, Drain Current [A] 10 s 1 ms 10 ms 100 ms DC ID, Drain Current [A] 10 3 100 s 10 1 12 10 8 6 4 2 0 25 10 0 Notes : 1. TC = 25C 2. TJ = 150C 3. Single Pulse 10 -1 10 0 10 1 10 2 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [C] Figure 11. Transient Thermal Response Curve 10 0 (t), Thermal Response D = 0 .5 0 .2 10 -1 N o te s : 1 . Z J C ( t) = 0 .5 8 C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t) 0 .1 0 .0 5 0 .0 2 0 .0 1 10 -2 PDM t1 s i n g le p u ls e JC Z t2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [ s e c ] 4 FQA13N50CF Rev. A www.fairchildsemi.com FQA13N50CF 500V N-Channel MOSFET Gate Charge Test Circuit & Waveform 50K 12V 200nF 300nF Same Type as DUT VDS VGS Qg 10V Qgs Qgd VGS DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS VGS RG RL VDD VDS 90% 10V DUT VGS 10% td(on) t on tr td(off) t off tf Unclamped Inductive Switching Test Circuit & Waveforms L VDS ID RG 10V tp BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD ID (t) VDD tp DUT VDS (t) Time 5 FQA13N50CF Rev. A www.fairchildsemi.com FQA13N50CF 500V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG Same Type as DUT VDD VGS * dv/dt controlled by RG * ISD controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop 6 FQA13N50CF Rev. A www.fairchildsemi.com FQA13N50CF 500V N-Channel MOSFET Mechanical Dimensions TO-3P 15.60 0.20 3.80 0.20 13.60 0.20 o3.20 0.10 9.60 0.20 4.80 0.20 1.50 -0.05 +0.15 12.76 0.20 19.90 0.20 16.50 0.30 3.00 0.20 1.00 0.20 3.50 0.20 2.00 0.20 13.90 0.20 23.40 0.20 18.70 0.20 1.40 0.20 5.45TYP [5.45 0.30] 5.45TYP [5.45 0.30] 0.60 -0.05 +0.15 Dimensions in Millimeters 7 FQA13N50CF Rev. A www.fairchildsemi.com FQA13N50CF 500V N-Channel MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I15 8 FQA13N50CF Rev. A www.fairchildsemi.com |
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